Phase change film material of silicon-adulterated sulfur series for phase change memory

A technology of phase-change memory and chalcogenide, which is applied in the field of materials in the field of microelectronics technology, can solve problems affecting the contact between phase-change thin films and electrodes or other film layers, affecting device stability, and unfavorable device operation, so as to reduce write The effect of operating current, improving life, and good energy transmission
CN100477318CInactive Publication Date: 2009-04-08SHANGHAI JIAOTONG UNIV +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI JIAOTONG UNIV
Publication Date
2009-04-08
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention is concerned with the phase change film material containing silicon series cluster subject, that is the silicon group subject alloy TeaSibSb100-(a+b) with the a no lesser than 48 but no more than 60, and the b no less than 8 but no more than 40. The invention has the higher crystalline state resistance and non / crystalline resistance change ratio compare to the Ge2Sb2Te5 phase change film, the lower change ratio of the non / crystalline film thickness and melting point. The memorizer including the Si series sulfur group subject phase change film is with the higher ratio sum of the switch stability and it helps the writing operation current.
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Description

[0001] The present invention is based on the patent application number: 200510028671.X, the patent application name is: "silicon-containing series chalcogenide phase change thin film material for phase change memory", the patent applicant is: Shanghai Jiaotong University, silicon storage technology company, The patent application date is: a patent divisional application on August 11, 2005. technical field

[0002] The invention relates to a material in the technical field of microelectronics, in particular to a silicon-containing series chalcogenide phase-change thin film material used for a phase-change memory. Background technique

[0003] The basic principle of phase change memory technology is to use phase change thin film material as storage medium. The resistivity of phase change thin film is very different between amorphous state and crystalline state. Using programmed electric pulse can make phase change thin film in amorphous state The reversible conversion between ...

Claims

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