The invention relates to a reverse conducting-
insulated gate bipolar transistor and a fabrication method thereof, and discloses a RC-IGBT (Reverse Conducting-Insulated Tate Bipolar
Transistor) and a fabrication method thereof. The RC-IGBT comprises a substrate, a well region, an active region, a current collection region and a carrier low-lifetime
thin layer, wherein the substrate is provided with a drift region, the well region is arranged in an upper surface of the substrate, the active region is arranged in the well region, the current collection region is arranged in a lower surface of the substrate, the carrier low-lifetime layer is arranged in the drift region, the upper surface of the substrate comprises an
intermediate region and an
edge region, the
edge region encircles the
intermediate region, the well region is arranged in the upper surface, corresponding to the
edge region, of the substrate, the carrier low-lifetime
thin layer is arranged under the well region, and the distance between the carrier low-lifetime
thin layer and the well region is smaller than the distance between the carrier low-lifetime thin layer and the current collection region. In the RC-IGBT, The carrier low-lifetime thin layer is arranged under the well region, the carrier combination speed can be increased, hole injection of the well region on the drift region is reduced, a
reverse recovery current of a FRD (
Fast Recovery Diode) is further reduced, the
reverse recovery time is further reduced, and thus, the switching speed of the RC-IGBT is increased.