Reverse conducting-insulated gate bipolar transistor and fabrication method

Abstract

The invention relates to a reverse conducting-insulated gate bipolar transistor and a fabrication method thereof, and discloses a RC-IGBT (Reverse Conducting-Insulated Tate Bipolar Transistor) and a fabrication method thereof. The RC-IGBT comprises a substrate, a well region, an active region, a current collection region and a carrier low-lifetime thin layer, wherein the substrate is provided with a drift region, the well region is arranged in an upper surface of the substrate, the active region is arranged in the well region, the current collection region is arranged in a lower surface of the substrate, the carrier low-lifetime layer is arranged in the drift region, the upper surface of the substrate comprises an intermediate region and an edge region, the edge region encircles the intermediate region, the well region is arranged in the upper surface, corresponding to the edge region, of the substrate, the carrier low-lifetime thin layer is arranged under the well region, and the distance between the carrier low-lifetime thin layer and the well region is smaller than the distance between the carrier low-lifetime thin layer and the current collection region. In the RC-IGBT, The carrier low-lifetime thin layer is arranged under the well region, the carrier combination speed can be increased, hole injection of the well region on the drift region is reduced, a reverse recovery current of a FRD (Fast Recovery Diode) is further reduced, the reverse recovery time is further reduced, and thus, the switching speed of the RC-IGBT is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, and more specifically, to a reverse conduction insulated gate bipolar transistor and a manufacturing method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT for short) is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET), and has a MOSFET Due to the high input impedance of the device and the high-speed switching characteristics of the power transistor (ie giant transistor, GTR for short), IGBT devices are widely used in AC motors, frequency converters, switching power supplies, lighting circuits, traction drives and other fields. [0003] Reverse Conducting-Insulated Gate Bipolar Transistor (RC-IGBT, Reverse Conducting-Insulated Gate Bipolar Transistor) is a new type of IGBT device with international foresight. , Fast Recovery...

AI Technical Summary

Problems solved by technology

[0005] Switching speed is an important parameter to measure the performance of RC-IGBT, the existing RC-IGBT switching speed is relatively slow

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