The invention discloses a preparation method for a
field effect transistor. The
field effect transistor comprises a substrate, a gate
electrode, a
dielectric layer, a
semiconductor layer, a source
electrode and a drain
electrode, and a packaging layer from the bottom up in sequence. Based on the
adhesive characteristic of lac, the
dielectric material can be physically peeled off so as to form the stable
dielectric layer having a thickness equal to that of several molecules, so that a solution method preparation step of the
dielectric layer is omitted, the usage of poisonous reagents is effectively eliminated, and the stability is improved; meanwhile, the lac is used as the substrate and the packaging layer; due to the characteristics of high compactness,
ultraviolet resistance,
radiation resistance and the like of the lac,
corrosion to the whole device by water and
oxygen can be blocked, and interference on the device by
ultraviolet and
electromagnetic radiation can be prevented, so that the stability of the overall device is improved and the service life of the overall device is prolonged; the
field effect transistor adopts the peelable
dielectric layer and the biological material as the substrate and the packaging layer, so that the
field effect transistor is easier to prepare and lower in cost; and in addition, the application range of the
field effect transistor is expanded, so that the
field effect transistor can be applicable to the fields of wearable equipment and
bioelectronics, and is suitable for large-scale
mass production.