Preparation method for field effect transistor

Abstract

The invention discloses a preparation method for a field effect transistor. The field effect transistor comprises a substrate, a gate electrode, a dielectric layer, a semiconductor layer, a source electrode and a drain electrode, and a packaging layer from the bottom up in sequence. Based on the adhesive characteristic of lac, the dielectric material can be physically peeled off so as to form the stable dielectric layer having a thickness equal to that of several molecules, so that a solution method preparation step of the dielectric layer is omitted, the usage of poisonous reagents is effectively eliminated, and the stability is improved; meanwhile, the lac is used as the substrate and the packaging layer; due to the characteristics of high compactness, ultraviolet resistance, radiation resistance and the like of the lac, corrosion to the whole device by water and oxygen can be blocked, and interference on the device by ultraviolet and electromagnetic radiation can be prevented, so that the stability of the overall device is improved and the service life of the overall device is prolonged; the field effect transistor adopts the peelable dielectric layer and the biological material as the substrate and the packaging layer, so that the field effect transistor is easier to prepare and lower in cost; and in addition, the application range of the field effect transistor is expanded, so that the field effect transistor can be applicable to the fields of wearable equipment and bioelectronics, and is suitable for large-scale mass production.

Description

technical field [0001] The invention belongs to the field of electronic technology, in particular to a preparation method of a field effect transistor. Background technique [0002] The performance and production technology of field effect transistors are developing day by day, and the mobility of many new materials exceeds that of amorphous silicon, and they are widely used in electronic paper, sensor identification cards, smart cards and other memory devices. Compared with the traditional silicon-based MOSFET, the device preparation process of the new material field effect transistor replaces the traditional high-temperature vacuum deposition and other methods with simple processes such as low-temperature deposition or solution (black jet printing, spin coating, dripping, etc.) complex process. In addition, the new material itself has the advantages of light weight, low price, flexibility, simple preparation method, various types, and properties that can be adjusted throu...

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Problems solved by technology

[0003] However, the existing field effect transistors that can work stably in the atmospheric environment are mostly silicon-based field effect transistors, which will pollute the environment when used in large quantities, the preparation process is complicated, the cost is expensive, and it is not easy to realize flexible and large-area devices; at the same time , the dielectric layer is an important part of the field effect tube. In the preparation process of the existing solution method, a large amount of toxic reagents such as chlorobenzene, toluene, chloroform and anisole are used. The dielectric layer material using water and alcohol solvent system is green. The primary factor of production, however, the existing dielectric layer materials soluble in water or alcohol have the disadvantage of unstable electrical properties in the atmospheric environment

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