2results about How to "Reduced lateral area" patented technology

The invention provides a miniaturized environment-friendly gas ring main unit which comprises a closed box body based on dry air insulation, the closed box body is provided with an emergency interface, and the internal space of the closed box body is divided into a closed gas box, a mechanism chamber, a cable chamber, a pressure relief chamber, a mounting compartment and an instrument chamber according to functions and purposes; wherein a three-fracture combined switch is designed in the closed gas tank, and a sprocket transmission structure is adopted between the three-fracture combined switch and the PT operating mechanism and the emergency power supply operating mechanism of the mechanism chamber, so that the miniaturization design requirement is met. The PT unit is integrated with the incoming and outgoing line unit, the instrument chamber is integrated with the automatic terminal DTU, and a cabinet does not need to be arranged independently. By reasonably distributing the positions of the functional rooms, the occupied space of the ring main unit is reduced, an original old high-voltage cable branch box is replaced, or a state grid standardized ring main unit is replaced in a narrow site, the power supply reliability is improved, and the power failure range of an abnormal accident is minimized.

This application relates to a semiconductor structure and its fabrication method, and pertains to the field of integrated circuit technology. The first device in the semiconductor structure includes a vertical gate and a horizontal gate. On one hand, by controlling the vertical channel with the vertical gate and the horizontal channel with the horizontal gate, the on-resistance of the first device can be reduced. On the other hand, the vertically positioned vertical gate eliminates the need for horizontal voltage reduction using a drift region, which helps reduce the lateral area of ​​the first device, allowing it to be made smaller and improving the integration density of the semiconductor structure. Simultaneously, the electrodes of the first device are all located on the front side of the substrate and led out from the front, making it compatible with CMOS processes and allowing for co-integration with CMOS devices.