Transient voltage suppressor and manufacturing method thereof

A transient voltage suppression and electrode technology, applied in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor/solid-state device components, etc., can solve the problem of reducing the reliability of semiconductor devices, increasing the cost of chip packaging, increasing line resistance and parasitic Capacitance and other issues

Active Publication Date: 2016-01-20
NANJING SILERGY SEMICON TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing device structure must use bonding wires to provide electrical connection between different diodes of the multi-channel transient voltage suppressor, which not only increases the packaging cost of the chip, but also increases the line resistance and parasitic capacitance, and reduces the semiconductor device reliability

Method used

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  • Transient voltage suppressor and manufacturing method thereof
  • Transient voltage suppressor and manufacturing method thereof
  • Transient voltage suppressor and manufacturing method thereof

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Embodiment Construction

[0036] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0037] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0038]If it is to describe the situation directly on another layer or ano...

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Abstract

Disclosed are a transient voltage suppressor and a manufacturing method thereof. The transient voltage suppressor comprises a semiconductor substrate. On the semiconductor substrate, a first buried layer of a first doping type is formed. A second buried layer of a second doping type is formed with the first region of the first buried layer. A first epitaxial region is formed on the second buried layer and a second epitaxial region is formed on the second region of the first buried layer. The first epitaxial region and the second epitaxial region are of the second doping type and the first doping type, respectively. A first doped region and a second doped region are respectively located in the first epitaxial region and the second epitaxial region. The first doped region and the second doped region are respectively of the first doping type and the second doping type. An electrically conductive channel is configured to extend from the surface of the second epitaxial region to the first buried layer. A first electrode, a second electrode and a third electrode are respectively in contact with the electrically conductive channel, the first doped region and the second doped region. By means of the transient voltage suppressor, a multi-channel one-way or two-way device can be formed on a single chip.

Description

technical field [0001] The present invention relates to semiconductor devices and methods of manufacturing the same, and more particularly, to transient voltage suppressors and methods of manufacturing the same. Background technique [0002] Mobile terminals such as mobile phones and wearable electronic products are widely used. The electronic circuits in the mobile terminal operate at a low operating voltage such as 5V, so as to reduce power consumption and prolong the use time of the mobile terminal. As the operating voltage decreases, the maximum voltage that an electronic circuit can withstand also decreases. Transient voltage suppressors (abbreviated TVS) with low breakdown voltages are required to protect electronic circuits. [0003] For the protection of high-speed transmission lines, transient voltage suppressors must have a high response speed in order to provide the required protection. The response speed of a transient voltage suppressor is mainly affected by ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/08H01L29/866H01L29/88H01L21/82
CPCH01L27/0255H01L21/283H01L21/761H01L23/5283H01L29/0646H01L29/66106H01L29/866
Inventor 姚飞王世军
Owner NANJING SILERGY SEMICON TECH CO LTD
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