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65 results about "Power band" patented technology

The power band of an internal combustion engine or electric motor is the range of operating speeds under which the engine or motor is able to operate most efficiently. While engines and motors have a large range of operating speeds, the power band is usually a much smaller range of engine speed, only half or less of the total engine speed range (electric motors are an exception—see the section on electric motors below).

Low-power band-gap reference and temperature sensor circuit

A combined low-voltage, low-power band-gap reference and temperature sensor circuit is provided for providing a band-gap reference parameter and for sensing the temperature of a chip, such as an eDRAM memory unit or CPU chip, using the band-gap reference parameter. The combined sensor circuit is insensitive to supply voltage and a variation in the chip temperature. The power consumption of both circuits, i.e., the band-gap reference and the temperature sensor circuits, encompassing the combined sensor circuit is less than one μW. The combined sensor circuit can be used to monitor local or global chip temperature. The result can be used to (1) regulate DRAM array refresh cycle time, e.g., the higher the temperature, the shorter the refresh cycle time, (2) to activate an on-chip or off-chip cooling or heating device to regulate the chip temperature, (3) to adjust internally generated voltage level, and (4) to adjust the CPU (or microprocessor) clock rate, i.e., frequency, so that the chip will not overheat. The combined band-gap reference and temperature sensor circuit of the present invention can be implemented within battery-operated devices having at least one memory unit. The low-power circuits of the sensor circuit extend battery lifetime and data retention time of the cells of the at least one memory unit.
Owner:GLOBALFOUNDRIES INC

Low-voltage low-power band gap reference voltage source implemented by MOS device

The invention discloses a low-voltage low-power band gap reference voltage source implemented by a MOS (Metal Oxide Semiconductor) device, which is implemented through the CMOS (Complementary Metal Oxide Semiconductor) technology, and comprises a circuit generating a current positively proportional to the temperature, a circuit generating a current inversely proportional to the temperature, a temperature secondary compensation circuit and a starting circuit; wherein the circuit generating the current positively proportional to the temperature obtains a voltage positively proportional to the temperature via a resistor, and simultaneously, the circuit generating the current inversely proportional to the temperature obtains a voltage inversely proportional to the temperature via the resistor, and the two voltages are added up to obtain a reference voltage unrelated to the temperature; additionally, the temperature secondary compensation circuit is used for compensating a high-order temperature coefficient of the reference voltage source so as to obtain a lower temperature-drift coefficient; the low-voltage low-power band gap reference voltage source provided by the invention has the advantages of low static power consumption, low temperature-drift coefficient, and capability of working in low-voltage environment and the like, and further improves the performance of the circuit.
Owner:TSINGHUA UNIV

Two-position SONOS memory and compiling, erasing and reading methods thereof

ActiveCN105226065ASolve the dilemma that the size is difficult to reduceSmall gate lengthSolid-state devicesRead-only memoriesMass storageOptoelectronics
The invention discloses a two-position SONOS memory. The two-position SONOS memory comprises a P-type silicon substrate and a gate structure arranged on the substrate and between a source end and a drain end, wherein the substrate is provided with the N-type doped source end, the drain end and an N channel; and the gate structure successively comprises a first silicon dioxide layer, a silicon nitride layer, a second silicon dioxide layer and a polycrystalline silicon control gate from down to up, and the silicon nitride layer comprises a first storage position close to the drain end side and a second storage position close to the source end side and is used for storing charges. Low-power band-to-band tunneling hot hole injection compiling and channel FN electron tunneling erasing modes are adopted, and a back gate bias is utilized for assisting hot hole injection, so that a conventional SONOS device is smaller in gate length, and the problem of high power of existing channel hot electron injection compiling is solved; in addition, the two-position storage SONOS memory is higher in storage density and storage capacity, so that the two-position storage SONOS memory has great advantages in the market where large-capacity memories are popular at present.
Owner:SHANGHAI HUALI MICROELECTRONICS CORP
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