Semiconductor laser device and method for manufacturing the same

Abstract

A semiconductor laser device includes: a semiconductor substrate (1) of a first conductive type; an envelopping layer (3) of the first conductive type provided on the semiconductor substrate; an active layer (4) provided on the envelopping layer of the first conductive type; a first envelopping layer (5) of a second conductive type provided on the active layer; a second envelopping layer (7) of the second conductive type provided on the first envelopping layer and forming a vertebral shape wave-guide extended along a resonator direction; a contact layer (9) of the second conductive type provided on the second envelopping layer of the second conductive type; an end face window structure (11), wherein the active layer region in which impurities are diffused to an end face portion of the resonator direction has a power band clearance larger than a gain region of other portions besides the end face portion; in the envelopping layers of the second conductive type, the gain region has an impurity concentration equal to or larger than the impurity concentration of the region of the end face window structure. An end face window structure having few changes of refractive index can be formed, which has a higher resistance and is able to restrain a Zn diffusion of the resonator direction.

Description

technical field [0001] The present invention relates to a semiconductor laser element with an end face window structure and a manufacturing method thereof. Background technique [0002] In recent years, in various fields including video players, DVD drives for recording and reproducing optical information, which feature a large storage capacity, are rapidly spreading. On the other hand, applications for high-magnification writing have become widespread, and further improvement in light output of semiconductor laser elements used as light sources has been demanded. [0003] In order to stabilize operation and ensure reliability during high output operation, a real refractive index waveguide type structure is generally used, and a window structure with a larger energy band gap than the emitted laser beam is formed on the laser end face. Accordingly, it is possible to suppress laser degradation due to heat generation from the interface level between the end face coating film a...

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Problems solved by technology

[0010] As a result, reliability decreases due to increased loss, increase in threshold value, operating current, or generation of low-energy bandgap difference regions

[0011] (2) Low resistance due to diffusion of high-concentration Zn

[0017] However, even if the methods described in Japanese Patent Laid-Open No. 2004-259943 and Japanese Patent Laid-Open No. 2001-94206 are used, it is difficult to avoid the occurrence of refractive index in the region of the gain part and the end window structure listed in the problem (3). bad question

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