Thermoelectric conversion element and process for producing same

A technology of thermoelectric conversion and manufacturing method, which is applied in the manufacture/processing of thermoelectric devices, the material of the junction leads of thermoelectric devices, and the thermoelectric devices only using the Peltier or Seebeck effect, etc., and can solve the problems of reduction of electrical conductivity and Seebeck coefficient , to achieve the effect of excellent thermoelectric conversion performance

Inactive Publication Date: 2014-06-25
FUJIFILM CORP
View PDF8 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the electrical conductivity and Seebeck coefficient are lower than those using a quartz substrate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thermoelectric conversion element and process for producing same
  • Thermoelectric conversion element and process for producing same
  • Thermoelectric conversion element and process for producing same

Examples

Experimental program
Comparison scheme
Effect test

manufacture example 1

[0164] Production example 1 Production of anodized aluminum substrate (treatment liquid: sulfuric acid)

[0165] (A) Pretreatment (electrolytic grinding treatment)

[0166] A high-purity aluminum substrate (manufactured by Sumitomo Light Metals Co., Ltd., purity 99.99% by mass, thickness 0.4mm) is cut in an area of ​​10 cm square, so that anodic oxidation can be performed, and an electrolytic polishing solution with the following composition is used at a voltage of 25V and a liquid temperature of 65°C. The electrolytic grinding treatment was carried out under the condition of a liquid flow rate of 3.0 m / min.

[0167] The cathode was a carbon electrode, and GP0110-30R (manufactured by Takasago Seisakusho) was used as a power source. In addition, the flow velocity of the electrolytic solution was measured using a vortex flow monitor FLM22-10PCW (manufactured by AS ONE).

[0168] (Electrolytic polishing liquid composition)

[0169] ・85% by mass phosphoric acid (a reagent manuf...

manufacture example 2

[0180] Production Example 2 Production of anodized aluminum substrate (treatment liquid: oxalic acid)

[0181] (A) Pretreatment process (electrolytic polishing treatment)

[0182] It carried out similarly to (A) of manufacture example 1.

[0183] (B) Anodized film formation process (anodized treatment)

[0184] For the aluminum substrate obtained above after the electrolytic grinding treatment, anodizing treatment was performed for 1 hour under the conditions of a voltage of 40V, a liquid temperature of 15° C., and a liquid flow rate of 3.0 m / min using an electrolyte solution of 0.50 mol / L oxalic acid. Furthermore, the anodized sample was immersed in a 0.5 mol / L phosphoric acid aqueous solution at 40° C. for 25 minutes to perform a film removal treatment.

[0185] After repeating these treatments four times in this order, use an electrolyte solution of 0.50 mol / L oxalic acid to implement anodic oxidation treatment again for 4 hours under the conditions of voltage 40V, liquid...

Embodiment 1-1

[0188] Embodiment 1-1 Fabrication of thermoelectric conversion element

[0189] Using the sulfuric acid-treated anodized aluminum substrate obtained in Production Example 1, a thermoelectric conversion layer was formed by a sputtering method to fabricate a thermoelectric conversion element.

[0190] Made by In 2 o 3 : 90%-SnO 2 : A target material composed of 10% (ITO, purity: 4N) was formed into a film using a magnetron sputtering device. The film thickness of the thermoelectric conversion layer at this time was 150 nm.

[0191] The performance of the formed thermoelectric conversion layer was evaluated in the following manner. The results are shown in Table 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
melting pointaaaaaaaaaa
pore sizeaaaaaaaaaa
melting pointaaaaaaaaaa
Login to view more

Abstract

A thermoelectric conversion element which comprises a substrate having a porous anodized aluminum coating film and, deposited on the substrate, a thermoelectric conversion layer that comprises an inorganic oxide semiconductor or an element having a melting point of 300 DEG C or higher as a main component and that has a structure having voids; and a process for producing the thermoelectric conversion element.

Description

technical field [0001] The present invention relates to a thermoelectric conversion element and a manufacturing method thereof. Background technique [0002] A thermoelectric conversion material capable of mutual conversion of heat energy and electric energy is used in a thermoelectric conversion element such as a thermoelectric power generation element, a Peltier element. Thermoelectric power generation using thermoelectric conversion materials and thermoelectric conversion elements can directly convert thermal energy into electricity, and has advantages such as no need for moving parts. It is used in watches that work at body temperature, power supplies for remote areas, and space power supplies. [0003] Various metal materials have been proposed as thermoelectric conversion materials. For example, it is reported that a thin film composed of a compound of indium oxide and palladium exhibits thermoelectric conversion characteristics (Non-Patent Document 1). In addition, i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/32C22C12/00C22F1/00C22F1/16C23C14/02H01L35/34
CPCH01L35/22C23C14/086C22C12/00C22F1/00H01L35/34C23C14/024C22F1/16C25D11/08C25D11/10C25D11/12C25D11/16C25D11/18C25D11/24H10N10/855H10N10/01
Inventor 林直之青合利明堀田吉则
Owner FUJIFILM CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap