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New compound semiconductor and producing method thereof, and solar cell and thermoelectric conversion element using the same

A technology of solar cells and thermoelectric conversion, applied in the direction of oxide conductors, sulfide conductors, semiconductor devices, etc.

Active Publication Date: 2011-01-12
LG CHEM LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The various compound semiconductors mentioned above cannot meet all these conditions, therefore, they need to be properly selected and applied according to their advantages and disadvantages

Method used

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  • New compound semiconductor and producing method thereof, and solar cell and thermoelectric conversion element using the same
  • New compound semiconductor and producing method thereof, and solar cell and thermoelectric conversion element using the same
  • New compound semiconductor and producing method thereof, and solar cell and thermoelectric conversion element using the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] BiCuOTe

[0069] To prepare BiCuOTe, 1.1198 g of Bi 2 o 3 (Aldrich, 99.9%, 100 mesh), 0.5022g of Bi (Aldrich, 99.99%, <10m), 0.4581g of Cu (Aldrich, 99.7%, 3m) and 0.9199g of Te (Aldrich, 99.99%, about 100 mesh ), and then heated in a vacuum quartz tube at 510 °C for 15 hours to obtain BiCuOTe powder.

[0070] Cu X-ray tube ( 50kV, 40mA) to measure powder X-ray diffraction (XRD) data. The step size is 0.02 degrees.

[0071] The TOPAS program (R.W. Cheary, A. Coelho, J. Appl. Crystallogr. 25 (1992) 109-121; Bruker AXS, TOPAS 3, Karlsruhe, Germany (2000)) was used to determine the crystal structure of the obtained material. The analysis results are shown in Table 1 and figure 2 middle.

[0072] 【Table 1】

[0073] atom

Location

x

y

z

share

Beq

Bi

2c

0.25

0.25

0.37257(5)

1

0.56(1)

Cu

2a

0.75

0.25

0

1

0.98(3)

O

2b

0.75

0.25

0....

Embodiment 2

[0078] BiCu 0.9 OTe

[0079] In order to prepare BiCu 0.9 OTe, 1.1371 g of Bi was thoroughly mixed by using an agate mortar 2 o 3 (Aldrich, 99.9%, 100 mesh), 0.51g of Bi (Aldrich, 99.99%, 0.9 OTe powder.

[0080] X-ray diffraction analysis of this sample was carried out in the same manner as in Example 1. like image 3 As shown, the material obtained in Example 2 was identified as BiCu 0.9 TeO.

Embodiment 3

[0082] Bi 0.98 Pb 0.02 CuOTe

[0083] To prepare Bi 0.98 Pb 0.02 CuOTe, by thoroughly mixing 2.5356 g of Bi using an agate mortar 2 o 3 (Aldrich, 99.9%, 100 mesh), 1.1724g of Bi (Aldrich, 99.99%, 0.98 Pb 0.02 CuOTe powder.

[0084] Cu X-ray tube ( 50kV, 40mA) to measure powder X-ray diffraction (XRD) data. The step size is 0.02 degrees.

[0085] The TOPAS program (R.W. Cheary, A. Coelho, J. Appl. Crystallogr. 25 (1992) 109-121; Bruker AXS, TOPAS 3, Karlsruhe, Germany (2000)) was used to determine the crystal structure of the obtained material. The analysis results are shown in Table 2 and Figure 5 middle.

[0086] 【Table 2】

[0087] atom

Location

x

y

z

share

Beq

Bi

2c

0.25

0.25

0.37225(12)

0.98

0.59(4)

Pb

2c

0.25

0.25

0.37225(12)

0.02

0.59(4)

Cu

2a

0.75

0.25

0

1

1.29(10)

O

2b

0.75

0.25...

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Abstract

Thermoelectric conversion materials, expressed by the following formula: Bi1-xMxCuwOa-yQ1yTeb-zQ2z. Here, M is at least one element selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb; Q1 and Q2 are at least one element selected from the group consisting of S, Se, As and Sb; x, y, z, w, a, and b are 0!<=x<1, 0<w!<=1, 0.2<a<4, 0!<=y<4, 0.2<b<4 and 0!<=z<4. These thermoelectric conversion materials may be used for thermoelectric conversion elements, where they may replace thermoelectric conversion materials in common use, or be used along with thermoelectric conversion materials in common use.

Description

technical field [0001] The invention provides a novel compound semiconductor and its preparation method, as well as a solar cell and a thermoelectric conversion element using the novel compound semiconductor. Background technique [0002] A compound semiconductor is not a single element like germanium, but a compound obtained by combining at least two elements and thus operating as a semiconductor. Various compound semiconductors have been developed and applied in many fields. Compound semiconductors are typically used in light emitting devices such as LEDs or laser diodes using the photoelectric conversion effect, solar cells, and thermoelectric conversion elements using the Peltier Effect. [0003] Among them, environmentally friendly solar cells that do not require any energy other than sunlight have been intensively studied as future alternative energy sources. Solar cells are generally classified into silicon solar cells using a single element mainly silicon, compound...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/12H01B1/02H01L35/16H01L31/042H01L31/04H01L21/18H10N10/00H10N10/80H10N10/852H10N10/01H10N10/13H10N10/85H10N10/851H10N10/853H10N10/854H10N10/855
CPCH01L31/032H01L35/22H01L31/072H01L35/18H01L31/0725C09K11/881H01L31/0272Y02E10/50C09K11/885H01L35/16H01B1/08H10N10/853H10N10/855H10N10/852C01G29/00C01G3/00C01B19/00H01B1/10
Inventor 朴哲凞孙世姬洪承泰权元锺金兑训
Owner LG CHEM LTD
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