Preparation of silicium/strontium lanthanum cobaltocyanate/lead zirconate titanate three layer construction ferroelectric material

A technology of lanthanum strontium cobaltate and lead zirconate titanate, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, circuits, etc., can solve the problem of poor adhesion Strong, Pt electrode resistivity increase, Pt noble metal cost is high, to achieve the effect of optimizing structure and performance

Inactive Publication Date: 2009-03-18
SHANGHAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, Pt / Si is mostly used as the substrate, and the Pt bottom electrode has good conductivity and oxidation resistance, etc., but the cost of Pt noble metal is high, and the diffusion reaction between the Pt electrode and the silicon substrate is prone to occur, resulting in fatigue of the ferroelectric film. ; At the same time, the Pt electrode and SiO 2 The adhesion between / Si substrates is not strong, and Ti needs to be introduced as an adhesion layer. The thickness of Pt electrodes is generally limited to about 150nm, resulting in an increase in the resistivity of Pt electrodes.

Method used

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  • Preparation of silicium/strontium lanthanum cobaltocyanate/lead zirconate titanate three layer construction ferroelectric material
  • Preparation of silicium/strontium lanthanum cobaltocyanate/lead zirconate titanate three layer construction ferroelectric material
  • Preparation of silicium/strontium lanthanum cobaltocyanate/lead zirconate titanate three layer construction ferroelectric material

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Embodiment 1

[0028] To prepare LSCO thin film and PZT thin film, the preparation steps of this embodiment are as follows:

[0029] I. Configuration of LSCO and PZT sol:

[0030] 1) LSCO sol:

[0031] A. Prepare 46.19ml of LSCO sol with a concentration of 0.1mol / L.

[0032] According to the La, Sr, Co molar ratio 1:1:2, the weight of each starting material is weighed as follows:

[0033] La(NO 3 ) 3 ·6H 2 O=1g;

[0034] Sr(NO 3 ) 2 =0.4887g;

[0035] Co(CH 3 COO) 2 0.5H 2 O=1.1504g;

[0036] Add 15.40ml of water and stir until dissolved at room temperature, condense and reflux at 90°C for 2 hours, then remove the condensing and reflux device after cooling down to 70°C, add PVA (7%wt) = 0.1847g, stir for 1 hour, and finally add 30.79ml of glacial acetic acid, 65 Stir at ℃ until the PVA is completely dissolved, and stir at room temperature until the solution is clear to obtain LSCO sol with a concentration of 0.1mol / L.

[0037] B. Prepare 46.19ml of LSCO sol with a concentration o...

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Abstract

The invention relates to a process for preparation of piezoelectric material with three-layer structure of silicon / lanthanum strontium cobaltite / lead zirconate titanate, belonging to the technical field of inorganic piezoelectric ferro-electricity material preparation processing. The invention prepares a lead zirconate titanate (PZT) film with preferred orientation of (100) crystal face and a lanthanum strontium cobaltite (LSCO) oxide electrode film on a common silicon substrate through adopting the sol-gel processing, and controls the orientation growth of the PZT film through changing the concentration of LSCO sol. The invention can reduce the processing cost of substrate and electrode, and can optimize the structure and performance of the PZT film. The products of the invention can be applied on piezoelectric ferro-electricity material which is used as micro-electronic mechanical system sensors and transducers.

Description

technical field [0001] The invention relates to a preparation method of a silicon / lanthanum strontium cobaltate / lead zirconate titanate three-layer piezoelectric material, which belongs to the technical field of inorganic piezoelectric ferroelectric material preparation technology. Background technique [0002] Due to its excellent dielectric, ferroelectric and piezoelectric properties, PZT piezoelectric films have broad application prospects in the fields of microelectromechanical systems (MEMS) memories, sensors and transducers. For these applications, it is often hoped that the PZT film is epitaxial or preferentially oriented, because the remanent polarization value of the epitaxial or preferentially oriented film is larger than that of the randomly oriented film, and it has more superior comprehensive properties. However, most of the reports so far are based on physical methods such as pulsed laser deposition or radio frequency magnetron sputtering on single crystal subs...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/22H10N30/053
Inventor 程晋荣陈凤俞圣雯
Owner SHANGHAI UNIV
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