6 results about "Magnetic oxide" patented technology

A semiconductor device comprising a variable resistance memory layer, wherein the memory layer includes a magnetic tunnel junction structure including a free layer having a changeable magnetization direction, a fixed layer having a fixed magnetization direction, a tunnel barrier layer disposed between the free layer and the fixed layer, and a magnetic oxide layer disposed on a sidewall of the free layer.

This invention discloses a high-coercivity hard magnetic oxide semiconductor thin film with perpendicular magnetic anisotropy and its preparation method. The invention employs a multi-target alternating gradient film preparation process, using NiFeO4 and NiCo2O4 targets for alternating sputtering to prepare NiCo2-xFexO4-NiCo2O4 gradient thin films. Experimental results show that the obtained films exhibit a coercivity as high as 1T and good conductivity, with an anomalous Hall resistivity reaching 52.5 μΩ·cm. This preparation method has the advantages of simplicity and low cost, providing new possibilities for the development of magnetic storage devices. This method has significant application potential for realizing high-density, high-speed, and low-power magnetic storage devices, contributing to the development and application of magnetic storage technology.

The present application provides a magnetic layer having a coercive force Hc of 2.00 kOe or more and a residual magnetization Mrt per unit area of 2.00 memu / cm2 or more, which is achieved without using a non-magnetic underlayer for promoting in-plane orientation of the magnetic layer and without performing heat deposition 2 The above in-plane magnetization film, in-plane magnetization film multilayer structure, hard bias layer, magnetoresistance effect element, and sputtering target. The in-plane magnetization film has: a preliminary magnetic layer (12A) containing Co, Pt, and a non-magnetic grain boundary material and having a thickness of 1 to 32 nm; and a magnetic layer main portion (12B) formed on the preliminary magnetic layer (12A) and containing Co, Pt, and a non-magnetic oxide, the above non-magnetic grain boundary material of the preliminary magnetic layer (12A) containing at least one of a Zn oxide and a Ta oxide.

An electromagnetic loss film includes a magnetic oxide film body and a plurality of electromagnetic loss structures. The magnetic oxide film body corresponds to a magnetic response frequency (FR), and the range of the magnetic response frequency is 0.1 MHz≤FR≤300 GHz. The electromagnetic loss structures are formed in the magnetic oxide film body, and the electromagnetic loss structures penetrate or are recessed in the magnetic oxide film body. Each of the electromagnetic loss structures has a long diameter, and the long diameter is N1x light velocity / FR, and 0.005≤N1≤1, and a space between the electromagnetic loss structures is N2x light velocity / FR, wherein 0.005≤N2≤1, and N1<N2.

The invention provides a high Curie temperature hard magnetic oxide semiconductor thin film and a preparation method thereof, and relates to the technical field of hard magnetic oxide thin film materials, the high Curie temperature hard magnetic oxide semiconductor thin film comprises a supporting layer and a thin film layer, the supporting layer substrate is arranged on a base station of a deposition cavity of a magnetron sputtering system, and the thin film layer is prepared through a magnetron sputtering method. Depositing a thin film on the supporting layer single crystal substrate by adopting a thin film layer target material; according to the technical key points, the NiCo2O4 thin film is prepared by adopting a radio frequency magnetron sputtering preparation process and adopting a NiCo2O4 target material, the obtained thin film has the Curie temperature of 380K or above, has excellent conductivity, can overcome the limitation of a traditional oxide hard magnetic material, has important application potential in the field of magnetic storage, and can be applied to the field of magnetic storage. The method can provide new possibility for research and development of high-density, high-speed and low-power-consumption magnetic memory devices, and meanwhile, the method has the advantage of relatively low cost of preparation materials, and is beneficial to realization of large-scale preparation and industrial production.

The invention discloses an electromagnetic loss film and an electromagnetic loss composite structure using the same. The electromagnetic loss film comprises a magnetic oxide film body and a plurality of electromagnetic loss structures. The magnetic oxide film body corresponds to a magnetic response frequency (FR), and the range of the magnetic response frequency is 0.1 MHz < = FR < = 300 GHz. The electromagnetic loss structures are formed on the magnetic oxide film body, the electromagnetic loss structures penetrate through or are sunken in the magnetic oxide film body, each electromagnetic loss structure has a long diameter, the long diameter is N1 * light velocity / FR, 0.005 < = N1 < = 1, the distance between the electromagnetic loss structures is N2 * light velocity / FR, 0.005 < = N2 < = 1, and N1lt; n2.