Stack ferro-electricity /magnetic multiferrou magnetoelectric compound film with conductive oxide as buffer layer and preparation thereof

A technology of magnetoelectric composite and composite film, applied in the direction of layered products, etc., can solve the problems of poor magnetoelectric performance of composite film, and achieve the effects of high magnetoelectric performance, improved leakage current performance, and simple equipment and preparation process.

Inactive Publication Date: 2009-03-04
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The existing layered magnetoelectric composite thin films mostly use PLD method and sol-gel method on SrTiO 3 Deposited on a single crystal substrate or a Si substrate with a Pt electrode, due to the constraints of the substrate, the magnetoelectric properties of the composite film are poor (DengC Y, Zhang Y, Ma J, et al.Magnetic-electric properties of epitaxial multiferroicNiFe 2 o 4 -BaTiO 3 heterostructure. Journal of Applied Physics, 2007, 102(7): 074114; He HC, Ma J, Wang J, et al. Orientation-dependent multiferroic properties in Pb(Zr 0.52 Ti 0.48 )O 3 -CoFe 2 o 4 nanocomposite thin films derived by a sol-gel processing. Journal of Applied Physics, 2008, 103(3): 034103; He H C, Wang J, Zhou B P, et al. Ferroelectric and ferromagnetic behavior of Pb(Zr 0.52 Ti 0.48 )O 3 -Co 0.9 Zn 0.1 Fe 2 o 4 multilayeredthin films prepared via solution processing. Advanced Functional Materials, 2007, 17(8): 1333-1338)

Method used

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  • Stack ferro-electricity /magnetic multiferrou magnetoelectric compound film with conductive oxide as buffer layer and preparation thereof
  • Stack ferro-electricity /magnetic multiferrou magnetoelectric compound film with conductive oxide as buffer layer and preparation thereof
  • Stack ferro-electricity /magnetic multiferrou magnetoelectric compound film with conductive oxide as buffer layer and preparation thereof

Examples

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Embodiment 1

[0039] Example 1. Preparation of laminated PZT / CFO multiferroic magnetoelectric composite film on Si substrate and its performance detection

[0040] 1. Preparation of laminated PZT / CFO multiferroic magnetoelectric composite thin films

[0041] (1) Preparation of LaNiO 3 (LNO)sol

[0042] Nickel acetate (Ni(CH 3 COO) 2 4H 2 O) and lanthanum nitrate (La(NO 3 ) 3 ·6H 2 O) as raw material, with acetic acid and deionized water as solvent, and formamide as additive, wherein the molar ratio of lanthanum nitrate and nickel acetate is 1:1, and the volume ratio of acetic acid, deionized water and formamide is 20-30:4 -6: 1-2.

[0043] First weigh 0.01mol of nickel acetate, dissolve it in 30ml of acetic acid by heating and stirring, then add 0.01mol of lanthanum nitrate and 20ml of deionized water, add 0.001mol of formamide after completely dissolving, adjust the concentration and filter, then let it stand for aging. 50 ml of LNO sol with a concentration of 0.2 mol / L was obtain...

Embodiment 2

[0067] Embodiment 2, in Pt / Ti / SiO 2 / Si substrate using LaNiO 3 Preparation of Laminated PZT / CFO Multiferroic Magnetoelectric Composite Thin Films with Buffer Layer

[0068] In the preparation method of this embodiment, the raw materials used and the preparation process are exactly the same as in Example 1, only the substrate is changed to Pt / Ti / SiO 2 / Si.

[0069] Pt / Ti / SiO with LNO as buffer layer 2 The ferroelectric properties and magnetic properties of the PZT / CFO composite film on the / Si substrate have no significant difference with the PZT / CFO composite film on the LNO / Si substrate in Example 1, as Figure 2-3 Shown in curve (b).

[0070] Pt / Ti / SiO with LNO as buffer layer 2 The magnetoelectric properties of PZT / CFO composite films on / Si substrates are as follows: Figure 4 and Figure 5 Shown in middle curve (b), when there is no DC magnetic field, the magnetoelectric coefficient of this film is 36mV / cm Oe, when the DC magnetic field is 6.4kOe, the magnetoelec...

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Abstract

The invention discloses laminated ferroelectric/magnetic multiferroic and magnetoelectric composite film and preparation method thereof. The film comprises a substrate, a ferroelectric oxide layer and a magnetic oxide layer, and also a buffer layer positioned between the substrate layer and the ferroelectric oxide layer or the magnetic oxide layer. The layer can be LaNiO3, YBa2Cu3O7-x or SrRuO3, among which LaNiO3 is preferred. The preparation method comprises the following steps: firstly, buffer layer sol is prepared; secondly, the buffer layer sol is uniformly coated on the substrate to obtain the buffer layer; thirdly, sol of the ferroelectric oxide layer and the magnetic oxide layer is respectively prepared; fourthly, the sol obtained in step 3 is coated on the buffer layer, and then the end product is obtained. After the composite film is introduced into the buffer layer, the stress restraint of the substrate to the composite film is effectively reduced, the magnetoelectric coupling performance of the composite film with laminated structure is obviously enhanced, the cost is reduced, the preparation technique is simple, the requirement on the equipment is low, and the compatibility with the prior technique is good.

Description

technical field [0001] The invention relates to a laminated ferroelectric / magnetic multiferroic magnetoelectric composite film and a preparation method thereof, in particular to a laminated ferroelectric / magnetic multiferroic magnetoelectric composite film using conductive oxide as a buffer layer and its Preparation. Background technique [0002] Ferroic materials (such as ferroelectric and ferromagnetic materials) are a large class of very important advanced functional materials, which can be widely used in electronic devices such as transducers, sensors, and sensors. High-tech areas such as systems dominate. In modern life and production with miniaturization of devices and diversified demands, there is an increasingly urgent need for materials with multiple functions at the same time, and multiferroic materials are a typical representative of them. Multiferroic materials have ferroelectricity, ferromagnetism and other ferroic properties at the same time, and due to the c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/52B32B9/00
Inventor 南策文何泓材林元华
Owner TSINGHUA UNIV
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