Preparation method for directly growing highly-doped yttrium iron garnet film on silicon

A yttrium iron garnet, highly doped technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problem of low content of rare earth element doping in yttrium iron garnet magneto-optical films, restricting the magneto-optical effect of materials, etc. problem, to achieve the effect of enhancing the magneto-optical performance

Active Publication Date: 2016-06-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

In the existing literature reports, the rare earth element doping content of the yttrium iron garnet magneto-optic film grown on silicon is relatively low, which restricts the improvement of the magneto-optic effect of the material.

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  • Preparation method for directly growing highly-doped yttrium iron garnet film on silicon
  • Preparation method for directly growing highly-doped yttrium iron garnet film on silicon
  • Preparation method for directly growing highly-doped yttrium iron garnet film on silicon

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Embodiment Construction

[0026] In order to allow those skilled in the art to better understand the technical solutions of the present invention, the present invention will be further described with reference to the accompanying drawings.

[0027] In order to obtain a highly doped yttrium iron garnet film, the following four groups of embodiments are designed;

[0028] The first group: Ce: YIG (x = 1.0, 1.1, 1.2, 1.3, 1.4) film preparation; (reference sample)

[0029] The second group: preparation of Ce:YIG (x=1.3, 1.5) film;

[0030] The third group: preparation of Ce:YIG (x=1.4) film;

[0031] The fourth group: preparation of Ce:YIG (x=1.5) film.

[0032] The x mentioned above is the chemical formula Ce x Y 3-x Fe 5 O 12 Where represents Ce atom content, 1≤x≤3.

[0033] Please refer to the attached Figure 1-6 The object of the present invention is to provide a method for preparing yttrium iron garnet film with high rare earth doping and strong magneto-optical effect grown on silicon. Taking Ce doped YIG as a...

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Abstract

The invention belongs to the technical field of production of magnetic oxide films, and particularly relates to a preparation method for directly growing a highly-doped yttrium iron garnet film on silicon. The laser energy density in the growth process of a rare earth-doped yttrium iron garnet film is changed from 1.8 J/cm<2> to 4.0 J/cm<2>, the film deposition temperature is changed from 400 DEG C to 850 DEG C, and the film deposition air pressure is changed from 1 mTorr to 20 mTorr, so that the rare earth doping concentration in the yttrium iron garnet film growing on a silicon substrate is improved from 33% to 50%, the Faraday optical constant of the material in photo-communication 1550 nm wavelengths is improved from 2800 degrees/cm to 6000 degrees/cm, and the magneto-optical property of the material is greatly enhanced.

Description

Technical field [0001] The invention belongs to the technical field of magnetic oxide film growth, and specifically relates to a method for directly growing a highly doped yttrium iron garnet film on silicon. Background technique [0002] At present, the isolator widely used in the field of optical communication, although the size of the device is getting smaller and smaller, it is still a discrete device. This kind of device adopts magneto-optical single crystal material, and needs to make its parts accurately and carefully calibrate. Therefore, the production cost is high, the production time is long, the system cannot be integrated, and the packaging is difficult. If magneto-optical materials and devices can be integrated on semiconductor chips, the device size and production cost will be greatly reduced, and system integration will be improved. [0003] At present, since a large number of semiconductor optical devices such as detectors, lasers, etc. are integrated on silicon, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/28C30B23/00
CPCC30B23/00C30B29/28
Inventor 毕磊张燕王闯堂邓龙江
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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