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A preparation method for directly growing highly doped yttrium iron garnet film on silicon

A yttrium iron garnet, highly doped technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problem of low content of rare earth element doping in yttrium iron garnet magneto-optical films, restricting the magneto-optical effect of materials, etc. problem, to achieve the effect of enhancing the magneto-optical performance

Active Publication Date: 2018-07-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

In the existing literature reports, the rare earth element doping content of the yttrium iron garnet magneto-optic film grown on silicon is relatively low, which restricts the improvement of the magneto-optic effect of the material.

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  • A preparation method for directly growing highly doped yttrium iron garnet film on silicon
  • A preparation method for directly growing highly doped yttrium iron garnet film on silicon
  • A preparation method for directly growing highly doped yttrium iron garnet film on silicon

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Embodiment Construction

[0026] In order to allow those skilled in the art to better understand the technical solutions of the present invention, the present invention will be further described below in conjunction with the accompanying drawings.

[0027] In order to obtain highly doped yttrium iron garnet thin films, the following four groups of embodiments are designed;

[0028] The first group: preparation of Ce:YIG (x=1.0, 1.1, 1.2, 1.3, 1.4) thin films; (reference samples)

[0029] The second group: preparation of Ce:YIG (x=1.3, 1.5) thin film;

[0030] The third group: the preparation of Ce:YIG (x=1.4) film;

[0031] The fourth group: preparation of Ce:YIG (x=1.5) thin film.

[0032] The x mentioned above is the chemical formula Ce x Y 3-x Fe 5 o 12 where represents the Ce atom content, 1≤x≤3.

[0033] Please refer to the attached Figure 1-6 , The purpose of the present invention is to provide a method for growing high rare earth doping and strong magneto-optic effect yttrium iron garne...

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Abstract

The invention belongs to the technical field of growth of magnetic oxide films, in particular to a preparation method for directly growing highly doped yttrium-iron garnet films on silicon. The invention changes the laser energy density from 1.8J / cm2 to 4.0J / cm2, the film deposition temperature from 400°C to 850°C and the film deposition pressure from 1mTorr to 20mTorr during the growth process of the rare earth doped yttrium iron garnet film. The rare earth doping concentration in the yttrium iron garnet film grown on the silicon substrate was increased from the original 33% to 50%, and the Faraday rotation optical constant of the material at the 1550nm wavelength of optical communication was increased from 2800 degrees / cm to 6000 degrees / cm, which is extremely Greatly enhance the magneto-optical properties of the material.

Description

technical field [0001] The invention belongs to the technical field of growth of magnetic oxide films, in particular to a preparation method for directly growing highly doped yttrium-iron garnet films on silicon. Background technique [0002] The isolators widely used in the field of optical communication are still discrete devices, although the size of the devices is getting smaller and smaller. This kind of device uses magneto-optical single crystal material, and its components need to be precisely manufactured and carefully calibrated, so the manufacturing cost is high, and the manufacturing time is long, the system cannot be integrated, and the packaging is difficult. If the magneto-optical materials and devices can be integrated on the semiconductor chip, the device size and production cost will be greatly reduced, and the system integration degree will be improved. [0003] At present, since a large number of semiconductor optical devices such as detectors and lasers ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/28C30B23/00
CPCC30B23/00C30B29/28
Inventor 毕磊张燕王闯堂邓龙江
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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