167 results about "Standard gibbs free energy change" patented technology

An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer.

A stack of a high-k gate dielectric and a metal gate structure includes a lower metal layer, a scavenging metal layer, and an upper metal layer. The scavenging metal layer meets the following two criteria 1) a metal (M) for which the Gibbs free energy change of the reaction Si+2 / y MxOy→2x / y M+SiO2 is positive 2) a metal that has a more negative Gibbs free energy per oxygen atom for formation of oxide than the material of the lower metal layer and the material of the upper metal layer. The scavenging metal layer meeting these criteria captures oxygen atoms as the oxygen atoms diffuse through the gate electrode toward the high-k gate dielectric. In addition, the scavenging metal layer remotely reduces the thickness of a silicon oxide interfacial layer underneath the high-k dielectric. As a result, the equivalent oxide thickness (EOT) of the total gate dielectric is reduced and the field effect transistor maintains a constant threshold voltage even after high temperature processes during CMOS integration.

A perpendicular magnetic recording medium 100 has, over a substrate, at least a magnetic recording layer 122 with a granular structure in which nonmagnetic grain boundaries are formed between magnetic grains continuously grown into a columnar shape. The magnetic grains of the magnetic recording layer 122 contain Co, Cr, and Pt. The magnetic recording layer 122 contains at least one oxide selected from a group A including SiO2, TiO2, and Cr2O3, at least one oxide selected from a group B consisting of oxides each having a larger Gibbs free energy ΔG than the group A, and a reducing agent adapted to reduce the oxides of the group B.

A thin-film transistor (TFT) substrate has improved electrical properties and reduced appearance defects and a method of fabricating the TFT substrate, are provided. The TFT substrate includes: gate wiring which is formed on a surface of an insulating substrate; oxide active layer patterns which are formed on the gate wiring and include an oxide of a first material; buffer layer patterns which are disposed on the oxide active layer patterns to directly contact the oxide active layer patterns and include a second material; and data wiring which is formed on the buffer layer patterns to insulatedly cross the gate wiring, wherein a Gibbs free energy of the oxide of the first material is lower than a Gibbs free energy of an oxide of the second material.

The invention relates to a conductive thickener and an electronic device and a solar battery comprising electrodes formed by the conductive thickener. The conductive thickener comprises conductive powder, a metal glass and an organic carrier, wherein, the metal glass comprises an alloy comprising at least two chemical elements selected from a chemical element having a low resistivity, a chemical element formed a solid solution with the conductive powder or a chemical element having a high oxidation potential, and wherein, the chemical element having the low resistivity has a resistivity about 100 micro-ohmmeter-cm, and the chemical element having the high oxidation potential has a Gibbs free energy absolute value about 100 kilojoule / moore or more.

The present invention provides a top emission type organic light emitting display apparatus in which manufacture it is possible to prevent the organic film from being oxidized when the upper transparent electrode is formed, and which is capable of emitting light at a low voltage. This organic light emitting display apparatus includes an organic light emitting layer and an upper electrode and a lower electrode sandwiching the said organic light emitting layer between them, and is of a structure in which the light emitted from the organic light emitting layer is taken out from the upper electrode side, wherein a buffer layer mostly made of an oxide with its Gibbs free energy generated at around the melting point being lower than −300 kJ / mol is provided between the organic light emitting layer and the upper electrode, the side of the organic layer which is in contact with the buffer layer being doped with an electron donative dopant.

A nonvolatile resistive memory element includes an oxygen-gettering layer. The oxygen-gettering layer is formed as part of an electrode stack, and is more thermodynamically favorable in gettering oxygen than other layers of the electrode stack. The Gibbs free energy of formation (ΔfG°) of an oxide of the oxygen-gettering layer is less (i.e., more negative) than the Gibbs free energy of formation of an oxide of the adjacent layers of the electrode stack. The oxygen-gettering layer reacts with oxygen present in the adjacent layers of the electrode stack, thereby preventing this oxygen from diffusing into nearby silicon layers to undesirably increase an SiO2 interfacial layer thickness in the memory element and may alternately be selected to decrease such thickness during subsequent processing.

Provided is a zinc-plated steel sheet for hot pressing having outstanding surface characteristics, comprising: a steel foundation plate comprising a metal surface diffusion layer of which the Gibbs free energy reduction per mole of oxygen during oxidation is less than that of Cr; an aluminum-rich layer containing at least 30 wt. % of aluminium formed on the surface diffusion layer, and a zinc plating layer formed on the aluminum-rich layer. In this way, a metal having a low affinity for oxygen is coated to an effective thickness prior to annealing and thus the creation of annealing oxides at the surface of the steel sheet is suppressed and a uniform zinc plating layer is formed, and alloying of the zinc plating layer is promoted during press-processing heat treatment. Cracking in the steel foundation plate during hot press molding is prevented.

A metal precursor powder, a method of manufacturing a conductive metal layer or pattern, and an electronic device including the same, are provided, and in the metal precursor powder, the Gibbs free energy change of hydrogen removal at a temperature range of −25° C. to 25° C. is −100 kJ / mol to 300 kJ / mol.

Nanostructures and methods of making nanostructures having self-assembled nanodot arrays wherein nanodots are self-assembled in a matrix material due to the free energies of the nanodot material and / or differences in the Gibb's free energy of the nanodot materials and matrix materials.

The invention discloses a sintered ore FeO content detection method and a sintered ore FeO content detection system. The method comprises: obtaining a thermal image; extracting a key frame image in combination with a dust change rule at the tail portion of a sintering machine; according to the key frame image, extracting an interested infrared thermal image by utilizing the geometrical characteristics of a trolley at the tail portion of the sintering machine so as to obtain a sintered ore cross section infrared thermal image; based on the sintered ore cross section infrared thermal image, extracting the shallow characteristics and the deep characteristics for describing the quality of the sintered ore; establishing a sintering process multiphase thermodynamic model based on Gibbs free energy theorem; according to the multiphase thermodynamic model, obtaining the FeO content classification characteristics of the sintered ore at the highest temperature, and establishing a FeO content prediction model based on multiple heterogeneous characteristics; and real-timely and onlinely predicting the FeO content of the sintered ore by utilizing the shallow characteristics, the deep characteristics and the FeO content classification characteristics. By adopting the technical scheme, the technical problem that the FeO content of the sintered ore cannot be accurately detected in real time inthe prior art is solved, the FeO content can be accurately detected in real time, and the method has the characteristics of high precision and strong interpretability.

A method of producing a material capable of electrochemically storing and releasing a large amount of lithium ions is provided. The material is used as an electrode material for a negative electrode, and includes silicon or tin primary particles composed of crystal particles each having a specific diameter and an amorphous surface layer formed of at least a metal oxide, having a specific thickness. Gibbs free energy when the metal oxide is produced by oxidation of a metal is smaller than Gibbs free energy when silicon or tin is oxidized, and the metal oxide has higher thermodynamic stability than silicon oxide or tin oxide. The method of producing the electrode material includes reacting silicon or tin with a metal oxide, reacting a silicon oxide or a tin oxide with a metal, or reacting a silicon compound or a tin compound with a metal compound to react with each other.

The invention belongs to the technical field of memories, and provides a resistance memory and a preparation method thereof. The resistance memory comprises a top electrode, a bottom electrode and a storage medium layer placed between the top electrode and the bottom electrode, the storage medium layer comprises a metal oxide layer based on a second metal material and a metal nitrogen oxide layer based on a first metal material, the absolute value of Gibbs free energy of the metal nitrogen oxide layer based on the first metal material is higher than that of Gibbs free energy of the metal oxide layer based on the second metal material, and the metal nitrogen oxide layer is partially oxidized at the contacting interface of a metal nitride layer based on the first metal material and the metal oxide layer based on the second metal material. The resistance memory has the advantages of high erasing frequency, high initial resistance and on resistance, large high-low resistance window and fine data retention, the storage performance of the resistance memory can be obviously improved, and the preparation method of the resistance memory is simple.

A method is provided for low temperature deposition of ceramic thin films of carbides, nitrides and mixed phases such as carbo-nitrides by atomic layer deposition (ALD), nano-layer deposition (NLD), and chemical vapor deposition (CVD). The deposition chemistries employ combinations of precursors to affect thin film processes at substantially lower temperatures than current deposition processes of thin films of boron (B) carbides, nitrogen (N), nitrides, carbonitrides of silicon (Si), carbon (C), germanium (Ge), phosphorus (P), arsenic (As), oxygen (O), sulfur (S), and selenium (S) on substrates. The inventive ALD and corresponding NLD and CVD process methods provide lower temperature deposition of various thin films comprising elements from the group B, C, Si, Ge, N, P, As and O, S and Se. The reactive precursor combinations are selected on the basis of reactivity towards one another as determined by the variation of Gibb's free energy (ΔG) with respect to deposition temperature.

Provided is a zinc oxide transparent electric conductor having zinc oxide (ZnO) as its principal component, containing an element to become an n-type dopant to zinc oxide, containing metal M in which P(P=(G+H mix) / RT, wherein G is the Gibbs free energy at temperature T of the metal, H mix is the mixing enthalpy at temperature T of zinc oxide and the metal, R is the gas constant, and T is the temperature) as a parameter showing the wettability with zinc oxide is 6 or less and in which its resistivity is smaller than the resistivity of zinc oxide added with the n-type dopant, and wherein concentration of metal M in relation to the total atomicity of zinc and the n-type dopant and metal M, which are all metal atoms configuring the zinc oxide transparent electric conductor, is 0.05 to 2.0 at %. In the development of a transparent electric conductor that does not contain raw material In which is expensive and with concern of resource depletion, provided is a low resistivity transparent electric conductor by exceeding the limits of the conventional development technique of the single dopant method, presenting guidelines for selecting a secondary additive material effective in achieving low resistivity, and indicating types of specific materials and the appropriate concentration range.

The invention discloses a high-strength face-centered cubic structure medium-entropy alloy and a preparation method thereof. The CoNiCu medium-entropy alloy comprises Co, Ni and Cu elements; a resultof respective comparison of different medium-entropy alloys in electron concentration and mixing enthalpy according to the Gibbs free energy and the phase formation law of the alloy shows that the CoNiCu medium-entropy alloy has the tendency to form a single-phase FCC structure, a CoNiCu medium-entropy alloy model is constructed based on the tendency, and the alloy is predicted to be a ductile material by a first-principles technique. The preparation method of the alloy comprises the following steps: batching, vacuum melting, suction casting, homogenization annealing and solid solution treatment. Co, Cr, and Cu with a purity of 99% or more are selected and are proportioned according to an equimolar ratio or an approximately equimolar ratio, the proportioned raw materials are placed in a vacuum smelting furnace and are multiply smelted, suction casting molding is carried out after the components are uniform, and the obtained casting undergoes homogenization annealing and solid solutiontreatment to obtain the CoNiCu medium-entropy alloy having a single face-centered cubic structure and having a room temperature compressive strength of above 1600 MPa and a compression ratio of above20%.

An energy efficient membrane based desalination process, which utilizes an osmotically driven energy recovery sub-process. Energy recovery sub-process involves the extraction of water from low salinity first aqueous solution by using a high salinity content, pressurized second aqueous solution to draw the water from first aqueous solution across a semi-permeable membrane. High salinity content, pressurized second solution can be used to generate osmotic pressure on the low salinity content first solution to drive water from first solution to the second solution with respect to chemical potential differences. The process also harvests the Gibbs free energy of mixing in terms of pressure conservation in the second solution, while the volume of second solution is increasing by the drawn water from the first solution.

An electron emission source including a carbon-based material coated with metal carbide in the surface coating layer, of which the metal has a negative Gibbs free energy when forming the metal carbide at 1,500 K or lower, a method of preparing electron emission sources, and an electron emission device including the electron emission source. The electron emission source includes a carbon nanotube coated with metal carbide or a carbon nanotube having a metal carbide layer and a metal coating layer, which are sequentially formed thereon. Thus, the electron emission source has long lifespan without deterioration of electron emitting characteristics. The electron emission source can be used to manufacture electron emission devices with improved reliability.

A method of manufacturing a semiconductor device includes forming a semiconductor layer containing a semiconductor material having a first oxide-generating Gibbs free energy required to become an oxide; forming a first material for a gate insulator on the semiconductor layer, said first material containing an element having a second oxide-generating Gibbs free energy required to become an oxide and becoming insulative when the element is oxidized or nitrided; and annealing the first material in an atmosphere containing hydrogen atoms, or heavy hydrogen atoms, and oxygen atoms in a temperature range where the first oxide-generating Gibbs free energy is equal to or higher than the second oxide-generating Gibbs free energy.

The invention discloses an automatic seawater distilling device, which utilizes natural energy and is characterized in that the natural energy like atmospheric pressure, earth gravity, molecule Gibbs free energy and solar energy and so on is utilized as power, a reverse U-shaped tubular structure with certain height combines two open desalting system and salt-collecting system to form an automatic seawater distilling system at normal temperature and negative pressure and realize the automatic production of fresh water (distilled water) and salt. The invention has the advantages that: 1. the natural energy is utilized as the power to produce fresh water and salt, which does not discharge any pollutant, thus saving fuel energy and protecting environment; 2. ductwork is highly automatic and needs no manual operation, which is safe for production and can improve labor efficiency. In a word, no energy, raw material and labor investment is needed, only equipment investment at a first time is needed, and then profit can be obtained for a long time. The invention is also applied for a bitter water region or be installed on different large ships to produce fresh water by utilizing the afterheat of the power and the water in rivers, lakes and seas on the way; also the invention can be installed on a residential building to produce drinking water with tap water, which has good ecological effect, economic benefit and social benefit and wide market.

The present invention provides a top emission type organic light emitting display apparatus in which manufacture it is possible to prevent the organic film from being oxidized when the upper transparent electrode is formed, and which is capable of emitting light at a low voltage. This organic light emitting display apparatus includes an organic light emitting layer and an upper electrode and a lower electrode sandwiching the said organic light emitting layer between them, and is of a structure in which the light emitted from the organic light emitting layer is taken out from the upper electrode side, wherein a buffer layer mostly made of an oxide with its Gibbs free energy generated at around the melting point being lower than −300 kJ / mol is provided between the organic light emitting layer and the upper electrode, the side of the organic layer which is in contact with the buffer layer being doped with an electron donative dopant.

The invention relates to the preparation of heat conduction materials, and belongs to the field of material processing. The method for preparing an anisotropy heat conduction block material by Gibbs free energy induction is characterized in that two-dimensional nanometer materials in a two-dimensional nanometer material dispersion liquid planar liquid film are subjected to directional arrangementand are solidified into an anisotropy film; after overlapping, hot briquetting is carried out to obtain the anisotropy heat conduction block material. Internal two-dimensional nanometer particles havethe advantages of higher heat transfer efficiency and higher speed. Especially when a temperature difference is high, compared with other heat conduction materials of which the internal nanometer particles are in disordered arrangement, the heat conduction block material prepared by the method is characterized in that the lateral ineffective thermal vibration of the two-dimensional nanometer particles on a micro-level can be lowered, the longitudinal thermal vibration frequency of nanometer particles is improved, heat transfer efficiency is improved, and the heat transfer coefficient of the anisotropy heat conduction block material can be 5300W / (m.K).

A semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate, and including a bottom electrode, a top electrode and a dielectric film between the bottom and top electrodes, the bottom electrode including a conductive film selected from a noble metal film and a noble metal oxide film, a metal oxide film having a perovskite structure, provided between the dielectric film and the conductive film, expressed by ABO3, and containing first metal element as B-site element, and a metal film provided between the conductive film and the metal oxide film, and containing second metal element which is B-site element of a metal oxide having a perovskite structure, a decrease of Gibbs free energy when the second metal element forms oxide being larger than that when the first metal element forms oxide, a thickness of the metal oxide film being 5 nm or less.

The invention relates to a method for predicting eutectic temperatures of nano Ag-Cu alloy systems in different sizes. The method includes: preparing Ag-Cu nano alloy particles according to a wet chemical method, coating with SiO2, subjecting the nano alloy particles to representation through TEM, and adopting a DSC (differential scanning calorimeter) for acquiring nano alloy size and melting information. By consideration of related nano particle surface effects, a relationship of corresponding nano particle gibbs free energy changing along with temperature and particle size is extrapolated onblock alloy gibbs free energy according to a CALPHAD method, a correction factor is adjusted according to experimental results, and accordingly a self-consistent related nano particle gibbs free energy describing expression is acquired and used for predicting Ag-Cu nano alloy eutectic temperature, and uniformity of calculative prediction results and experimental results is achieved.

The invention relates to a method for obtaining key performance parameters of an alloy material, particularly to a method for the determining hydrogen absorption / desorption thermodynamic parameter of hydrogen storage alloy. The method comprises the steps as follows: firstly, a hydrogen storage alloy hydrogen absorption / desorption performance tester is utilized to carry out a dependence test so as to obtain hydrogen absorption / desorption pressure-concentration isotherm data of the hydrogen storage alloy at different temperatures, then, a series of automatic analysis and process are performed on the experimental data, and finally, the hydrogen storage alloy hydrogen absorption / desorption enthalpy change data, hydrogen absorption / desorption entropy change data, and the gibbs free energy change data at the set temperature are output. According to the invention, the hydrogen storage alloy component-performance screening efficiency and the reliability of the analysis conclusion in engineering application are greatly improved, and the problems that the past hydrogen storage alloy hydrogen absorption / desorption thermodynamic parameter data is great in dispersibility, high in mistake occurrence probability, complicated in analytical test process, and not visual enough in data output are solved.

The invention discloses a method for calculating semiconductor quantum dot balance components. The method comprises the steps as follows: building a substrate and a quantum dot model; meshing the built substrate and quantum dot model by fine grid blocks, simplifying the quantum dot model into a plurality of volume element combinations, and replacing volume elements with grid nodes in the quantum dot model; assigning a component value to each grid node in the quantum dot model, and taking each component value as a calculation variable; setting an average quantum dot component to be constant, and calculating the Gibbs free energy of the quantum dot model, the sensitivity of the Gibbs free energy to the quantum dot component distribution and the sensitivity of the average quantum dot component to the quantum dot component distribution through a finite element method; and obtaining the quantum dot component distribution when the Gibbs free energy of the quantum dot model is minimal according to the Gibbs free energy of the quantum dots, the average quantum dot component, the Gibbs free energy components and the sensitivity information. According to the method, the efficiency of calculating the quantum dot balance component distribution is improved.

The invention discloses a method for measuring plant leaf cell metabolic energy, and belongs to the technical field of biophysical information detection. A measuring device comprises a bracket, foam plates, electrode plates, wires, an iron block and a plastic rod, wherein the foam plates embedded with the electrode plates are separately adhered to the bottom end of the bracket and the plastic rod.The electrode plates are connected with an LCR tester through the wires during using, the two electrode plates clamp a plant leaf to be measured, and physiological resistance, physiological impedanceand physiological capacitance of the plant leaf under different clamping force are simultaneously measured in a parallel mode. According to the Gibbs free energy equation and the Nernst equation, models of the physiological capacitance of the plant leaf changing with the clamping force, the physiological resistance of the plant leaf changing with the clamping force and the physiological impedanceof the plant leaf changing with the clamping force are further constructed, and the plant leaf cell metabolic energy is calculated jointly by using parameters of the three models.

The invention discloses a cathodic potential regulation-based bioelectrochemical coupled upflow anaerobic biological reaction device and a use method thereof. In the device, an annular electrode is arranged in the sludge layer of an upflow anaerobic bioreactor, and a bioelectrode system provides electrons with high energy for microorganisms nearby a cathode in the cylindrical shell of the upflow anaerobic bioreactor in order to carry out pollutant degradation. A reference electrode is fixed nearby the biological cathode through a fastening bolt, is connected with an online detector and a computer through leading wires, and is used for the real-time monitoring of the cathodic potential of the biological cathode of the coupling reactor. A potential difference needed by the reaction is calculated through a Nernst equation according to Gibbs free energy needed by the degradation of different pollutants, and the applied voltage of the bioelectochemical system is adjusted to control the cathodic potential to be slightly below the range of the potential difference in order to achieve low-energy consumption and high-efficiency degradation of chloronitrobenzene and other non-degradable organic pollutants.

A nonvolatile resistive memory element includes an oxygen-gettering layer. The oxygen-gettering layer is formed as part of an electrode stack, and is more thermodynamically favorable in gettering oxygen than other layers of the electrode stack. The Gibbs free energy of formation (ΔfG°) of an oxide of the oxygen-gettering layer is less (i.e., more negative) than the Gibbs free energy of formation of an oxide of the adjacent layers of the electrode stack. The oxygen-gettering layer reacts with oxygen present in the adjacent layers of the electrode stack, thereby preventing this oxygen from diffusing into nearby silicon layers to undesirably increase an SiO2 interfacial layer thickness in the memory element and may alternately be selected to decrease such thickness during subsequent processing.