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Resistance memory and preparation method thereof

A resistive, memory technology, applied in the field of memory, can solve the problems of poor data retention, less rewritable times, small high and low resistance windows, etc. Effect

Inactive Publication Date: 2013-01-09
FUDAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to save costs, aluminum interconnected aluminum wires are usually directly used as the upper electrode, and the aluminum wires are generally tested by the diffusion barrier layer of TiN. figure 1 The storage performance of the WOx resistive memory shown has the following disadvantages: (1) low initial resistance; (2) low low resistance state, small high and low resistance window; (3) less erasable times; (4) poor data retention

Method used

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  • Resistance memory and preparation method thereof
  • Resistance memory and preparation method thereof
  • Resistance memory and preparation method thereof

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Embodiment Construction

[0039]The invention is described more fully hereinafter in reference to the examples illustrated in the illustrations, providing preferred embodiments but should not be considered limited to the embodiments set forth herein. In the drawings, the thicknesses of layers and regions are exaggerated for clarity, but as schematic diagrams, they should not be considered as strictly reflecting the proportional relationship of geometric dimensions.

[0040] The drawings referenced herein are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be considered limited to the particular shapes of the regions shown in the drawings, but include resulting shapes, such as manufacturing-induced deviation. For example, the curves obtained by dry etching usually have curved or rounded characteristics, but in the illustrations of the embodiments of the present invention, they are all represented by rectangles, and the repres...

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Abstract

The invention belongs to the technical field of memories, and provides a resistance memory and a preparation method thereof. The resistance memory comprises a top electrode, a bottom electrode and a storage medium layer placed between the top electrode and the bottom electrode, the storage medium layer comprises a metal oxide layer based on a second metal material and a metal nitrogen oxide layer based on a first metal material, the absolute value of Gibbs free energy of the metal nitrogen oxide layer based on the first metal material is higher than that of Gibbs free energy of the metal oxide layer based on the second metal material, and the metal nitrogen oxide layer is partially oxidized at the contacting interface of a metal nitride layer based on the first metal material and the metal oxide layer based on the second metal material. The resistance memory has the advantages of high erasing frequency, high initial resistance and on resistance, large high-low resistance window and fine data retention, the storage performance of the resistance memory can be obviously improved, and the preparation method of the resistance memory is simple.

Description

technical field [0001] The invention belongs to the technical field of memory, and in particular relates to a resistive memory (Resistive Memory), in particular to selecting a metal with a relatively large Gibbs free energy absolute value of a metal oxide, so that the metal nitride layer and the lower electrode oxide A resistive memory in which a layer of metal oxynitride is formed between layers and a preparation method thereof. Background technique [0002] Memory occupies an important position in the semiconductor market. Due to the continuous popularization of portable electronic devices, the share of non-volatile memory in the entire memory market is also increasing, and more than 90% of the share is occupied by FLASH (flash memory). However, due to the requirement of storing charges, the floating gate of FLASH cannot be thinned without limitation with the development of technology generation. It is reported that the limit of FLASH technology is around 20nm, which force...

Claims

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Application Information

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IPC IPC(8): H01L45/00
Inventor 林殷茵刘易宋雅丽
Owner FUDAN UNIV
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