Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Resistive memory and preparation method thereof

A resistive memory technology, applied in the field of memory, can solve the problems of poor data retention, few times of erasing and writing, and small high and low resistance windows, and achieve good data retention, large high and low resistance windows, and many times of erasing and writing Effect

Inactive Publication Date: 2012-02-08
FUDAN UNIV
View PDF2 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] after testing, figure 1 The WOx resistive memory shown has the following disadvantages: (1) low initial resistance; (2) low high-resistance state, small high-low-resistance window; (3) less erasable times; (4) poor data retention

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistive memory and preparation method thereof
  • Resistive memory and preparation method thereof
  • Resistive memory and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] The invention is described more fully hereinafter in reference to the examples illustrated in the illustrations, providing preferred embodiments but should not be considered limited to the embodiments set forth herein. In the drawings, the thicknesses of layers and regions are exaggerated for clarity, but as schematic diagrams, they should not be considered as strictly reflecting the proportional relationship of geometric dimensions.

[0038] The drawings referenced herein are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be considered limited to the particular shapes of the regions shown in the drawings, but include resulting shapes, such as manufacturing-induced deviation. For example, the curves obtained by dry etching usually have curved or rounded characteristics, but in the illustrations of the embodiments of the present invention, they are all represented by rectangles, and the repre...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention, which belongs to the memory technology field, provides a resistive memory and a preparation method thereof. The resistive memory comprises: a lower electrode, an upper electrode of a first metal material and a metal oxide storage medium layer which is arranged between the upper electrode and the lower electrode and is based on a second metal material. A Gibbs free energy absolute value of the metal oxide of the first metal material is greater than the Gibbs free energy absolute value of the metal oxide of the second metal material. The upper electrode is partially oxidated to form a metal oxide layer of a first metal on an interface where the upper electrode contacts with the metal oxide storage medium layer. The resistive memory possesses the following advantages that: the resistive memory has many rewriting times; an initial resistance and an off resistance (a high resistance state) are high; high and low resistance windows are large; a data maintenance ability is good. Memory performance of the resistive memory can be substantially raised. The preparation method is simple.

Description

technical field [0001] The invention belongs to the technical field of memory, and in particular relates to a resistive memory (Resistive Memory), in particular to a method for selecting an upper electrode with a larger absolute value of Gibbs free energy of a metal oxide to form an upper electrode between the upper electrode and a storage medium layer. A resistive memory with an upper electrode film oxide layer and a preparation method thereof. Background technique [0002] Memory occupies an important position in the semiconductor market. Due to the continuous popularization of portable electronic devices, the share of non-volatile memory in the entire memory market is also increasing, of which more than 90% of the share is occupied by FLASH (flash memory). However, due to the requirement of storing charges, the floating gate of FLASH cannot be thinned without limitation with the development of technology generation. It is reported that the limit of FLASH technology is aro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 林殷茵王明宋雅丽
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com