Multifunctional ion beam sputtering equipment

An ion beam sputtering and multifunctional technology, applied in the field of thin film deposition equipment, can solve the problems of not having co-sputtering function, simultaneous sputtering and etching, single function of equipment, etc., and achieves easy manufacturing, simple structure and low cost. low effect

Inactive Publication Date: 2010-11-10
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF0 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Because ion beam has various functions such as ion beam sputtering deposition, ion beam assisted sputtering, ion beam etching, ion beam cleaning, ion beam polishing, ion beam thinning, etc., many vacuum equipment manufacturers in the world are usin

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multifunctional ion beam sputtering equipment
  • Multifunctional ion beam sputtering equipment
  • Multifunctional ion beam sputtering equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0037] figure 1 It is the layout diagram (front view) of the multifunctional ion beam sputtering equipment provided by the present invention, and the multifunctional ion beam sputtering equipment includes:

[0038] a vacuum chamber;

[0039] A sputtering workpiece table, used for loading the substrate, is arranged in the center of the top of the vacuum chamber, and its lower surface is parallel to the horizontal plane;

[0040] Two sputtering target tables, arranged in the lower part of the vacuum chamber, left and right symmetrical to the direction of the perpendicular line of the sputtering workpiece table, for loading targets;

[0041] Two sputtering ion sources, which are arranged in the middle of the vacuum chamber...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses multifunctional ion beam sputtering equipment which comprises a vacuum chamber, a sputtering workbench, two sputtering target platforms, two sputtering ion sources and an assistant cleaning ion source, wherein the sputtering workbench is arranged in the top middle position of the vacuum chamber; the lower surface of the sputtering workbench is parallel to the horizontal plane; the two sputtering target platforms are arranged at the lower part of the vacuum chamber and symmetrical bilaterally with respect to the direction of the perpendicular bisector of the sputtering workbench; the two sputtering ion sources are arranged in the middle of the vacuum chamber and symmetrical bilaterally arranged in the direction of the perpendicular bisector of the sputtering workbench; an emitted ion beam and a target surface loaded on the sputtering target platforms form an angle of 45 DEG; the assistant cleaning ion source is arranged in the middle of the vacuum chamber; and the emitted ion beam and the lower surface of the sputtering workbench form an angle of 30 DEG. The equipment has various functions and can be used for sputtering deposition, etching, polishing thinning and heat treatment of high-quality multilayer ultrathin media and metal film materials.

Description

technical field [0001] The invention relates to the technical field of thin film deposition equipment, in particular to a multifunctional ion beam sputtering equipment. Background technique [0002] Ion beam sputtering deposition (IBSD) is one of the important methods of thin film preparation in semiconductor technology. According to the principle of sputtering, the surface of the target is bombarded with a low-energy focused ion beam, and the sputtered target is deposited on the surface of the substrate and deposited on the surface of the substrate. firmly attached to the substrate surface. The filament in the ion gun generates thermal electrons under high pressure, which ionize argon gas into Ar + , are accelerated under an electric field to form an ion beam. [0003] Reactive ion beam sputtering deposition (RIBD) can be performed under local oxygen pressure or oxygen ion beam bombardment to prepare oxide films. [0004] In the process of film deposition, ion beam bomba...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C14/46C23C14/56
Inventor 龙世兵刘明陈宝钦谢常青贾锐徐连生
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap