31 results about "Ion gun" patented technology

The invention discloses a physical vapor deposition auxiliary device and a use method thereof, and relates to the technical field of semiconductor technologies, and the technical key points are that the physical vapor deposition auxiliary device comprises a machine body, a vacuum pump, an electron generation system, basic components of a reaction gas bin and a clean gas bin, and three functional modules of a target material cleaning module, a gas distribution optimization system and a multi-axis rotating workpiece table; the target material cleaning module adopts a coaxial nested structure, an outer-layer ion gun removes macroscopic pollutants of the target material, and an inner-layer focusing gun removes microscopic oxides; the gas distribution optimization system adjusts the gas distribution through an annular porous guide plate and a dynamic feedback control module, and maintains the air pressure in the cavity to be uniform; the multi-shaft rotating workpiece table utilizes a driving motor, a bevel gear set, a sliding rail and an electromagnetic driving system to achieve revolution, rotation and inclination angle adjustment of a workpiece. The problems that in the prior art, target cleaning is insufficient, gas distribution is uneven, and coating uniformity is poor can be effectively solved.

An ion source (1) includes: a resonance unit (8) having an ion extraction port (9) from which ions (I) are extracted; an internal conductor (13) that forms a narrow section (16), which is a region (P) where an electric field is concentrated, between the resonance section (8) and the ion extraction port (9); an electromagnetic wave introduction unit (14) that introduces electromagnetic waves (F) resonated by the resonance unit (8); and a gas introduction part (15) that introduces a gas (G), which is a raw material for the ions (I), into the narrow part (16).

The invention provides a multi-target ion beam sputter coating device and a use method thereof.The device comprises a vacuum cavity, a base carrying disc and an auxiliary ion gun vertically opposite to the base carrying disc are arranged in the vacuum cavity, and the left side and the right side of the auxiliary ion gun are each provided with a main ion gun and a target material exchange mechanism; the target material exchange mechanism comprises a supporting frame, a target material base rotating by 360 degrees is arranged in the supporting frame, target materials are evenly distributed on the side, close to the main ion gun, of the target material base in the circumferential direction, a baffle is arranged on the side, close to the main ion gun, of the supporting frame, and a notch matched with the main ion gun is formed in the baffle. Target materials can be flexibly selected for thin film deposition according to needs, frequent manual target material replacement or equipment adjustment is not needed, time and labor cost are saved, and meanwhile thin film deposition continuity is ensured.

The invention relates to an imaging elemental analyzer for imaging one or more analyte elements in an organic sample, wherein the analyzer comprises: a chamber for receiving an organic sample containing one or more analyte elements to be imaged, wherein the internal chamber pressure surrounding the sample is in the range of 10 -5 up to 10 -2mbar; at least one irradiant selected from: (i) an ion gun for irradiating the sample with a high-intensity primary ion beam, wherein the primary ions are generated in the ion gun at a pressure below 1 mbar, the ion gun serving to focus the primary ion beam onto a localized spot on the sample surface and to move the spot over time to a plurality of locations on the sample surface; (ii) a laser for irradiating a localized spot on the sample surface and to move the spot over time to a plurality of locations on the sample surface; a gas-filled RF ion guide for receiving the generated ions, comprising the elements released from the sample in response to irradiation by the primary ions or the laser, wherein the RF ion guide prevents the propagation of any ions whose m / z values ​​are less than the mass or mass range of the analyte elements;and a time-of-flight (TOF) mass analyzer for recording the ions or reaction products of the secondary ions formed from the RF ion guidance, wherein the TOF mass analyzer is configured for a repetition rate of at least 5 kHz. The invention also relates to a corresponding method and a corresponding device for imaging one or more inorganic, non-volatile elements.

This invention discloses a particle cleaning device for the final testing stage of COF products, relating to the field of microelectronic packaging and testing technology. It includes a testing machine, with a fixed top plate mounted on top. The machine also has a roller, a first constant-force wheel, and a second constant-force wheel, with a yellow rubber tension wheel between them. An ion gun is also mounted on the machine, driven by the same set of air pumps. A blow-suction composite module and an optical recognition module are also detachably mounted on the machine. The machine is further equipped with an intelligent control terminal for adjusting the ion gun and the blow-suction composite module. During use, the dynamically adjustable servo nozzle of the ion gun works in conjunction with the precise blowing nozzle of the blow-suction composite module to fully cover the blind spots of the ion gun, effectively reducing the cleaning blind spots caused by particle shedding and contamination of the product.

The application relates to the technical field of vacuum coating, in particular to a permeation and plating integrated coating device. The permeation and plating integrated coating device comprises a permeation and plating module, the permeation and plating module comprises a coating chamber, a coating arc source, an anode component, a first arc striking mechanism and an ion gun; the coating arc source, the first arc striking mechanism and the ion gun are connected with the coating chamber, the inside of the coating chamber is provided with a containing station for placing a workpiece, the anode component is arranged on the side of the containing station which is away from the ion gun, a working space is used for inputting nitrogen gas for nitriding or coating reaction gas, the first arc striking mechanism is arranged corresponding to the ion gun, so that the ion gun emits a hot electron beam towards the anode component. The permeation and plating integrated coating device can perform nitriding and coating treatment on the workpiece, so that nitrogen ions penetrate into the inside of the workpiece, so as to increase the hardness of the workpiece, and the film layer performance and the overall hardness performance of the treated workpiece are greatly improved.

A gas ion gun includes an anode electrode to remove electrons from a gas in order to create gas ions. The anode electrode includes a wire made of an electrical conductive material or of a semiconductor material, the wire extending along a longitudinal axis from a proximal end to a flattened distal end. The anode electrode further includes a crystal particle directly deposited on the flattened distal end, the electrical conductivity of the crystal particle being ten times smaller than the electrical conductivity of the wire.

The application discloses a real-time detection device applied to FIB (Focused Ion Beam) lithography technology, which comprises N ion guns for ion beam lithography and N electron guns for detection after ion beam lithography to ensure the quality of lithography, wherein N is greater than or equal to 1, and the ion guns and the electron guns are respectively controlled and synchronously work. The application has the following beneficial effects: the electron gun and the ion gun are separated by a certain distance, can synchronously work, can ensure that they do not interfere with each other (especially the electron gun does not interfere with the work of the ion gun), can realize real-time detection, and can greatly improve the efficiency of ion beam lithography and detection; the electron gun and the ion gun are respectively controlled, and better real-time monitoring can be realized; the electron gun is controlled and works independently, and better monitoring effect can be obtained.

The utility model relates to a semiconductor production system, in particular to a substrate foreign matter cleaning device which comprises a cleaning mechanism, the cleaning mechanism comprises an air source, an ion neutralizer and an ion gun, the downstream of the air source is connected with the ion neutralizer and used for providing air flow for the ion neutralizer, and the ion gun is connected with the air source. The downstream of the ion neutralizer is connected with the ion gun and is used for providing airflow carrying ions for the ion gun, and the output end of the ion gun is arranged towards the surface of the substrate and is used for blowing the airflow carrying ions towards the surface of the substrate; and the dust collection mechanism is arranged close to the base plate, and the receiving end of the dust collection mechanism is opposite to the output end of the ion gun, so that the foreign matter blown away by the cleaning mechanism is received by the dust collection mechanism. By the aid of the structure, foreign matters on the surface of the substrate can be removed by the aid of the cleaning mechanism before the substrate is picked up, the removed foreign matters are collected by the dust collecting mechanism, and follow-up influence on the quality of the substrate due to the foreign matters is avoided.

The ion source for the micro-nano polishing machine comprises a protective shell, a gas leading-in channel is arranged in the protective shell, a penning ion gun, an accelerating electrode and an electrostatic lens are sequentially arranged at the position of the gas leading-in channel, and the penning ion gun, the accelerating electrode and the electrostatic lens are all connected with a power module. The power supply module comprises an ionization voltage Vd applied to the penning ion gun, an acceleration voltage Va applied to the acceleration electrode and a focusing voltage Ve applied to the electrostatic lens, and the ionization voltage Vd, the acceleration voltage Va and the focusing voltage Ve are all provided by a voltage-adjustable power supply. According to the utility model, the diameter and distribution of the ion beam current can be adjusted, so that the same processing scheme can generate the same processing effect.

The invention relates to the technical field of substrate surface dynamic detection, and discloses a substrate surface dynamic detection and planarization processing method, which comprises the following steps: step 1, substrate preparation: placing a substrate to be processed at a preset position in a vacuum cavity, and ensuring that the vacuum degree in the vacuum cavity is maintained below 1 atmospheric pressure so as to ensure the stability of a processing environment; and step 2, setting an ion gun device: starting the ion gun device, adjusting working parameters of the ion gun device according to treatment requirements, including gas type, flow and power of supplied electric energy, ensuring normal work of the ion gun device, and generating stable gas ion beams. According to the method, the glossiness of the metal circuit can be monitored in real time in the etching process through dynamic glossiness detection, so that excessive etching or insufficient etching is avoided, unnecessary processing time and material waste are reduced, and the overall processing efficiency is improved.

Provided is an ion milling device capable of forming a processed surface in which an amorphous layer is suppressed. This ion milling device comprises: a sample chamber provided with a gas introduction port; a sample stage installed in the sample chamber; an ion gun that is attached to the sample chamber and emits an unfocused ion beam; an electrode that can be disposed so as to face a sample placement surface of the sample stage; and a power supply that applies a voltage between the electrode and the sample stage. The sample stage is provided with a magnetic circuit.

This utility model discloses an ion generating device for a non-vacuum coating gun, including an ion generating gun. The ion generating gun comprises an ion gun head assembly, an ion gun body assembly, an ignition assembly, and an air inlet connector. The ignition assembly is connected to an external ignition power supply and is inserted into the ion gun body assembly, with a ventilation gap between them. The ignition assembly cooperates with the ion gun head assembly to generate ignition ionization. The air inlet connector is connected to the ion gun body assembly and is provided with an air inlet channel. The incoming air passes through the air inlet channel and the ventilation gap and is ionized into plasma gas at the ion gun head assembly. The ion generating device of this utility model has a reasonable structural design and compact size, making it easy to install and use. It has a better ionization effect, improves the contact reaction between the ionized plasma gas and the chemical solution, and further enhances the coating effect.

To provide a wiring board having via conductors with good connection reliability. [Solution] A wiring board according to an embodiment includes the steps of forming an insulating layer (111) on a conductor layer (121), irradiating the insulating layer (111) with laser light to form a through hole (11a) that penetrates the insulating layer (111) in the thickness direction and exposes the conductor layer (121), cleaning the inner surface of the through hole (11a), forming a metal film layer on the inner surface of the through hole (11a), and filling the through hole (11a) with a plating film layer to form a via conductor. The cleaning is performed by ion gun treatment, and the ion gun treatment includes forming a recess RE on the surface of the conductor layer (121) exposed in the through hole (11a).

The embodiment of the utility model provides a microwave plasma gun and an ion implanter, and the microwave plasma gun comprises a plasma chamber; the plasma chamber is used for accommodating microwaves and gas, and an electron cyclotron resonance area is formed in the plasma chamber; at least one electron escape hole is formed in the side wall of the plasma chamber; in the axial direction of the electron escape holes, the positions of the electron escape holes coaxially correspond to the positions of the electron cyclotron resonance areas, and in the direction perpendicular to the axial direction, the total sectional area of the electron escape holes is smaller than the sectional area of the electron cyclotron resonance areas. According to the technical scheme provided by the embodiment of the utility model, the leakage degree of gas in the plasma chamber can be reduced, and the working performance of the microwave plasma gun is improved.

This utility model discloses a roller bonding machine for SCA adhesive, relating to the technical field of SCA adhesive bonding machines. It includes: a base, a worktable fixedly mounted on the top surface of the base, an electrical distribution box fixedly mounted on the left side wall of the base, a controller fixedly mounted on the front side wall of the worktable, a sliding groove on the top surface of the worktable, a movable plate on the top surface of the base, and two fixed blocks fixedly mounted on the top surface of the movable plate. A detection component is included. When the SCA adhesive, due to its high elasticity and thickness, generates static electricity and tends to curl, the adhesive surface instantly attracts the metal blocks, causing the movable blocks to compress a spring and trigger a microswitch. After the detection triggers, the microswitch directly activates an ion gun. The ion air is blown directionally onto the adhesive surface through a hose and air outlet, neutralizing static electricity. This avoids the interference of ambient light and humidity that traditional photoelectric or electrostatic meter solutions are susceptible to, significantly reducing the curling rate and improving the SCA adhesive bonding yield.

This disclosure relates to a plasma cutting auxiliary device, which includes a slide rail, a slider, and a plasma gun sleeve. The slide rail is configured to be fixed to the workpiece to be cut. The slider is slidably mounted on the slide rail and configured to move linearly along the slide rail under the action of an external force. The plasma gun sleeve is detachably fixedly connected to the slider and has a mounting through hole, configured to mount the plasma gun through the mounting through hole. The slider has at least two connection positions. When the plasma gun sleeve and the slider are connected through a first connection position, the center line of the mounting through hole forms a first preset angle α with the surface to be cut. When the plasma gun sleeve and the slider are connected through a second connection position, the center line of the mounting through hole forms a second preset angle β with the surface to be cut. The angle of the first preset angle α is smaller than the angle of the second preset angle β.

The invention relates to a movable all-dimensional plasma groove cutting machine which comprises a machine body, a clamping assembly, a plasma gun and a control box, the clamping assembly, the plasma gun and the control box are arranged on the machine body, an angle correction support in shaft connection with the machine body is arranged in the machine body, and the clamping assembly comprises a fixing support installed on the angle correction support and a clamping chuck rotationally connected with the fixing support. A rotation driving motor which is in signal connection with the control box and drives the clamping chuck to rotate is installed on the angle correction support, an angle correction mechanism and an angle correction motor which drives the angle correction mechanism to drive the angle correction support to deflect are further arranged in the machine body, and the angle correction motor is in signal connection with the control box. A gyroscope in signal connection with the control box is integrated in the plasma gun. The attitude of the plasma gun is monitored through the gyroscope, dynamic angle compensation is provided for the workpiece, and the relative angle between the workpiece and the plasma gun is corrected in real time.

The utility model relates to a plasma surface treatment device for a photovoltaic irradiation cable. The plasma surface treatment device comprises a rack. The device is characterized in that two sets of plasma emission mechanisms which are oppositely arranged are arranged on the rack. The plasma emission mechanisms comprise ion generators, ion guns are arranged on the adjacent sides of the two ion generators, and the two ion guns are connected with the corresponding ion generators respectively. The muzzle ends of the ion guns are oppositely arranged, and the centers of the muzzle ends are located on the same straight line. And a distance for a processed photovoltaic irradiation cable to pass through is formed between muzzle ends of the two ion guns. And a pay-off mechanism and a take-up mechanism are respectively arranged on two sides of a connecting line center of the two ion guns. The outer end of the photovoltaic irradiation cable on the pay-off mechanism penetrates through the space and then is connected with the take-up mechanism. The device is wide in application range. The device is especially suitable for plasma treatment of an insulating layer on the surface of a photovoltaic irradiation cable.

This invention discloses a molybdenum disulfide thin-film sensor based on Raman detection and its manufacturing method, which can be used for the detection of tumor markers. The molybdenum disulfide thin-film silicon wafer is formed by layer-by-layer self-assembly of a molybdenum disulfide dispersion and a polydiallyl dimethyl ammonium chloride (PDDA) solution onto a clean silicon wafer after pretreatment with an argon plasma gun, forming a molybdenum disulfide thin film. The carboxyl groups provided by sodium cholate added during the ultrasonic activation of the molybdenum disulfide powder are utilized with EDC / NHS solution. Antibodies corresponding to tumor markers are then incubated, and after BSA blocking treatment, the corresponding tumor markers are captured and then Raman detection is performed.

An ion milling device and method to increase milling speed and lengthen a maintenance cycle, including an ion gun including a first cathode and a second cathode which face each other, the second cathode having an ion beam extraction hole; an anode provided between the first cathode and the second cathode in a state of being electrically insulated from the first cathode and the second cathode; an ionization chamber that is surrounded by the first cathode, the second cathode, and the anode and to which a gas is supplied; and a magnet. The anode has a cylindrical shape with longitudinal direction along a central axis, and has a first protrusion formed on an inner wall in contact with the ionization chamber toward the central axis in a range from a position equidistant from both end portions of the anode to the end portion facing the first cathode.

The non-vacuum coating gun is characterized in that the non-vacuum coating gun comprises an ion generation gun and a liquid medicine reaction spraying gun, and the ion generation gun is connected with the liquid medicine reaction spraying gun; the ion generation gun comprises an ion gun head assembly, an ion gun body assembly, an ignition assembly and an air inlet connector. The liquid medicine reaction spraying gun comprises a spraying gun body, a flow dividing core assembly, a spraying gun head assembly and a rear positioning assembly, the flow dividing core assembly, the spraying gun head assembly and the rear positioning assembly form a channel for plasma gas to pass through, and a circulating cooling cavity is formed between the flow dividing core assembly and the spraying gun body. And a liquid medicine channel communicated with the end part of the shunting core assembly is formed between the spray gun main body and the spray gun head assembly. The plasma gas is formed through ionization, the plasma gas and the liquid medicine are subjected to sufficient atomization reaction through cooling, the influence of high-temperature reaction on the coating quality is avoided, the sufficiently ionized plasma gas can be subjected to atomization chemical reaction with the liquid medicine better finally, then coating is conducted, and the industrial defects are overcome.

The application provides a fluorescence real-time navigation cryogenic focused ion beam processing device and method. The fluorescence real-time navigation cryogenic focused ion beam processing device comprises: a sample fixing assembly for carrying and moving a cryogenic sample containing a fluorescent marker; an electron gun for electron beam imaging of the cryogenic sample; an ion gun for ion beam processing of the cryogenic sample; and a fluorescence imaging system for fluorescence imaging of the cryogenic sample emitting an excitation light beam to monitor the processing of the ion beam in real time through a fluorescence image. The processing device optimizes the position of the fluorescence imaging system so that the sample fixing assembly does not interfere with the fluorescence imaging system, and major redesign of the chamber and sample fixing assembly is not required due to interference problems, thereby maximizing compatibility with existing mainstream cryogenic dual-beam scanning electron microscope structures, avoiding high-cost, complex and potentially unstable modifications.

The present invention discloses a method for preparing a semi-transparent perovskite solar cell, including a semi-transparent perovskite solar cell with an n-i-p type structure or a p-i-n type structure. The beneficial effects of the present invention are as follows: the preparation method of the transparent conductive oxide film used is reactive plasma deposition, which can avoid damage to the substrate during the deposition process and eliminate the need to add a buffer layer to the perovskite cell; the raw material used to prepare the transparent conductive oxide film is a purchased bulk target material, and no other process gas is required except the argon gas required for the ion gun, and the preparation method is simple; the semi-transparent perovskite solar cell using reactive plasma deposition of a transparent conductive oxide film as the top transparent conductive layer does not require annealing of the top transparent electrode, is suitable for perovskites that are not resistant to high temperatures, has a relatively simple preparation process, can achieve a wide-bandgap perovskite cell conversion efficiency of >20%, has high efficiency and low cost potential, and is suitable for large-area cells.

The present invention provides an electrostatic eliminator and a method for eliminating static electricity on a wafer surface. The electrostatic eliminator includes: an ion gun disposed on the periphery of the wafer, the ion gun being used to emit charged ions toward the wafer surface to neutralize the charge on the wafer surface; two magnetic field coils disposed above and below the wafer, respectively, the two magnetic field coils being used to generate a magnetic field toward the wafer, the magnetic field varying with the amount of charge on the wafer surface; and a charge detection unit connected to the magnetic field coil signals, the charge detection unit being used to detect the amount of charge on the wafer surface based on changes in the magnetic field. The technical solution of the present invention can eliminate charge accumulated on the wafer surface, thereby preventing damage to the wafer surface caused by electrostatic discharge.

The utility model discloses a kind of nozzles of arc plasma gun, including nozzle body, the nozzle body is equipped with central arc passage and cooling water channel;Cooling water channel includes annular cooling water channel of bottom and multiple vertical cooling water channels arranged along nozzle body circumference, the bottom of each vertical cooling water channel is communicated with annular cooling water channel, the top of each vertical cooling water channel is communicated with the water inlet passage or water outlet passage of plasma gun in nozzle body top end;The center of each vertical cooling water channel is on the same circle, multiple vertical cooling water channels are evenly distributed along the circumference of the same circle, and the interval distance between adjacent two vertical cooling water channels is 0.5-2 millimeters.The flow rate of cooling water in the nozzle cooling water channel is relatively fast, the temperature of the entering cooling water is relatively low, and the mixing and residence phenomenon of the water with higher temperature after absorbing heat is relatively less.The heat exchange efficiency is high, and the cooling effect is good.

An ion thinning instrument with an adjustable focusing ion gun includes a gas introduction unit, an ion generating unit, an adjustment unit, and a high-voltage supply unit; the gas introduction unit uniformly introduces gas into the ion generating unit; the ion generating unit ionizes the gas to emit an ion beam; and the adjustment unit adjusts the direction, angle, and focus position of the ion beam. The present invention adjusts the direction, angle, and focus position of the ion beam by providing an adjustment unit, thereby directly focusing the ion beam onto the central thinning area of ​​the sample in the ion thinning sample chamber, thereby optimizing the problem of needing to adjust the angle every time a sample is placed in the ion thinning sample chamber. At the same time, the annular groove and platform arrangement of the sleeve and the insulating sleeve allow the gas to enter the inner cavity of the ion generating unit more uniformly through the upper and lower ends, making the formation and emission of the ion beam more stable and efficient.

The application provides a high-energy large-beam diode ion gun device, which comprises a gas-tight assembly for providing inert gas and comprising a housing and a gas source connector, the gas source connector being sealingly mounted in the housing; a high-voltage supply assembly for providing a high-voltage power supply and comprising a high-voltage cable, a first insulating block, a second insulating block and a wiring housing; and an ion beam generating assembly for generating an ion beam and comprising an anode, a cathode and an accelerating cathode located on the same axis. The application is characterized in that a gap is provided between the anode and the insulating sleeve, and the gas guide hole and the anode blind hole are connected, so that the inert gas introduced from the gas source connector is introduced from the center of the anode to the ionization space between the cathode and the anode, the inert gas is ionized in the ionization space and completes the primary acceleration, and the high-energy large-beam ion beam is obtained after the secondary acceleration between the cathode and the accelerating cathode.

The invention discloses a preparation method of a nitride film material plane TEM sample, and the method specifically comprises the steps: cutting a sample into strips, enabling a substrate of the sample to face upwards, and pasting the substrate and a silicon accompanying sheet on a carrying platform side by side; grinding the sample; inclining the carrying table along one side of the silicon accompanying sheet, and grinding the sample on one side of the silicon accompanying sheet into a wedge-shaped structure; performing ion thinning on the sample; after the uniform-thickness stripes appear on the substrate of the sample, continuously carrying out ion thinning until the uniform-thickness stripes appear on the epitaxial layer of the sample; if the to-be-detected area is located in the surface area of the epitaxial layer, the angle of the double ion guns is kept to be + 4 degrees to + 8 degrees until the sample is thinned to form a hole; if the to-be-detected area is located in the middle area of the epitaxial layer, setting the angle of the double ion guns to be positive and negative until the sample is thinned to form a hole; and cleaning the sample. Through wedge-shaped grinding stress release and dynamic ion thinning control, sample preparation with a large thin area, low damage and high positioning precision is realized, and the equipment cost and the operation threshold are reduced.

The invention discloses a plasma arc zone melting purification device and method, and relates to the technical field of metal purification, the plasma arc zone melting purification device comprises a plasma gun, a bearing assembly and a permanent magnet; the plasma gun is used for generating a plasma arc to form a melting zone on the metal to be purified; the permanent magnet is used for generating a static magnetic field in the melting zone; based on the characteristics of plasma arc smelting, strong current exists in melt, when a static magnetic field is applied around the melt, the current and the static magnetic field interact to generate Lorentz force, the melt generates strong convection under the action of the Lorentz force, melt convection is enhanced, impurities can be promoted to be diffused from the inside of the melt to the surface, the impurities are promoted to move to the surface at a higher speed, and therefore the impurities are prevented from entering the melt. Meanwhile, the thickness of the pasty area is reduced by enhancing convection, so that impurities are promoted to be discharged into the melting area from the pasty area, volatilization of the impurities and plasma reaction are promoted, and the purification efficiency is improved.