53 results about "Ion gun" patented technology

The invention relates to the technical field of cuprous oxide particle testing, and discloses a method for characterizing cuprous oxide particles in a fine copper wire, which comprises the following steps: S1, fixing the fine copper wire on a copper sheet by using conductive silver paste, putting the copper sheet into a silica gel square mold, filling a metallographic phase cold inlay, and standing for 30 minutes to obtain a cured sample; s2, putting the cured sample obtained in the step S1 into a cross section cutting sample table of a three-ion-beam cutting instrument, selecting a cross section mode, setting ion gun voltage and ion beam cutting time, and starting a cutting program; and S3, transferring the sample obtained in the step S2 into a scanning electron microscope, selecting an electron channel contrast imaging mode, and setting acceleration voltage, current, working distance and magnification times to obtain a high-resolution scanning electron microscope image of the cross section of the fine copper wire. And key information such as the size, the morphology and the distribution condition of cuprous oxide particles and the interface bonding condition of the cuprous oxide particles and a copper matrix is obtained from the cuprous oxide particles. Therefore, a basis is provided for formulating a reasonable fine copper wire drawing process and a bus continuous casting and rolling process.

The invention discloses a method for preparing a Bi2Te3 thermoelectric material EBSD sample through ion grinding. The specific method comprises the following steps: cutting a Bi2Te3 material by adopting a linear cutting technology to obtain a sample with a proper size, inlaying, grinding and polishing, and ultrasonically cleaning to remove surface impurities; the method comprises the following steps: horizontally placing a sample on an objective table, closing a cabin door, opening a mechanical pump to vacuumize to 0.01 pa, and rotating the angle of the sample table until the included angle between the ion beam jet direction and the normal direction of the surface of the sample is 85-88 degrees; the argon flow is set to be 1.5 mL / min; turning on a main circuit switch, adjusting the acceleration voltage to 2kv, setting the grinding time to be 15-20 minutes, starting an ion gun switch, opening a plate valve after the current is stabilized at 350-400uA, starting grinding, and rotating the sample table. And after grinding is finished, resetting the acceleration voltage to be 4kv, grinding again, taking out the sample, and carrying out EBSD observation.

The invention discloses a physical vapor deposition auxiliary device and a use method thereof, and relates to the technical field of semiconductor technologies, and the technical key points are that the physical vapor deposition auxiliary device comprises a machine body, a vacuum pump, an electron generation system, basic components of a reaction gas bin and a clean gas bin, and three functional modules of a target material cleaning module, a gas distribution optimization system and a multi-axis rotating workpiece table; the target material cleaning module adopts a coaxial nested structure, an outer-layer ion gun removes macroscopic pollutants of the target material, and an inner-layer focusing gun removes microscopic oxides; the gas distribution optimization system adjusts the gas distribution through an annular porous guide plate and a dynamic feedback control module, and maintains the air pressure in the cavity to be uniform; the multi-shaft rotating workpiece table utilizes a driving motor, a bevel gear set, a sliding rail and an electromagnetic driving system to achieve revolution, rotation and inclination angle adjustment of a workpiece. The problems that in the prior art, target cleaning is insufficient, gas distribution is uneven, and coating uniformity is poor can be effectively solved.

An ion source (1) includes: a resonance unit (8) having an ion extraction port (9) from which ions (I) are extracted; an internal conductor (13) that forms a narrow section (16), which is a region (P) where an electric field is concentrated, between the resonance section (8) and the ion extraction port (9); an electromagnetic wave introduction unit (14) that introduces electromagnetic waves (F) resonated by the resonance unit (8); and a gas introduction part (15) that introduces a gas (G), which is a raw material for the ions (I), into the narrow part (16).

The invention provides a multi-target ion beam sputter coating device and a use method thereof.The device comprises a vacuum cavity, a base carrying disc and an auxiliary ion gun vertically opposite to the base carrying disc are arranged in the vacuum cavity, and the left side and the right side of the auxiliary ion gun are each provided with a main ion gun and a target material exchange mechanism; the target material exchange mechanism comprises a supporting frame, a target material base rotating by 360 degrees is arranged in the supporting frame, target materials are evenly distributed on the side, close to the main ion gun, of the target material base in the circumferential direction, a baffle is arranged on the side, close to the main ion gun, of the supporting frame, and a notch matched with the main ion gun is formed in the baffle. Target materials can be flexibly selected for thin film deposition according to needs, frequent manual target material replacement or equipment adjustment is not needed, time and labor cost are saved, and meanwhile thin film deposition continuity is ensured.

The present invention provides an apparatus for preparing nanopowders by plasma irradiation, comprising a furnace body, a powder collecting device, a vaporizing device, and a wire feeding device. The vaporizing device is disposed on the furnace body and above the crucible. The powder collecting device is disposed at the rear of the furnace body via a pipeline. The wire feeding device is disposed outside the furnace body and feeds a base material welding wire into the furnace body. The vaporizing device comprises at least two plasma guns, each connected to a negative electrode and a positive electrode, generating a high-temperature arc between the plasma guns and the crucible. The plasma guns are each provided with a handwheel for adjusting the upward and downward movement of the plasma guns. The base material welding wire is vaporized by the high-temperature arc. The vaporized base material is then blown through the vaporizing device and a horizontal air blowing assembly above the crucible opening to the powder collecting device for collection. The apparatus of the present invention has an ingenious structural design, with each device or component interconnected to ensure the vacuum degree of the equipment during production and processing, reduce the contact between the raw materials and air or oxygen, ensure the production quality of the nanopowder, and facilitate continuous and uninterrupted production.

The invention relates to an imaging elemental analyzer for imaging one or more analyte elements in an organic sample, wherein the analyzer comprises: a chamber for receiving an organic sample containing one or more analyte elements to be imaged, wherein the internal chamber pressure surrounding the sample is in the range of 10 -5 up to 10 -2mbar; at least one irradiant selected from: (i) an ion gun for irradiating the sample with a high-intensity primary ion beam, wherein the primary ions are generated in the ion gun at a pressure below 1 mbar, the ion gun serving to focus the primary ion beam onto a localized spot on the sample surface and to move the spot over time to a plurality of locations on the sample surface; (ii) a laser for irradiating a localized spot on the sample surface and to move the spot over time to a plurality of locations on the sample surface; a gas-filled RF ion guide for receiving the generated ions, comprising the elements released from the sample in response to irradiation by the primary ions or the laser, wherein the RF ion guide prevents the propagation of any ions whose m / z values ​​are less than the mass or mass range of the analyte elements;and a time-of-flight (TOF) mass analyzer for recording the ions or reaction products of the secondary ions formed from the RF ion guidance, wherein the TOF mass analyzer is configured for a repetition rate of at least 5 kHz. The invention also relates to a corresponding method and a corresponding device for imaging one or more inorganic, non-volatile elements.

This invention discloses a particle cleaning device for the final testing stage of COF products, relating to the field of microelectronic packaging and testing technology. It includes a testing machine, with a fixed top plate mounted on top. The machine also has a roller, a first constant-force wheel, and a second constant-force wheel, with a yellow rubber tension wheel between them. An ion gun is also mounted on the machine, driven by the same set of air pumps. A blow-suction composite module and an optical recognition module are also detachably mounted on the machine. The machine is further equipped with an intelligent control terminal for adjusting the ion gun and the blow-suction composite module. During use, the dynamically adjustable servo nozzle of the ion gun works in conjunction with the precise blowing nozzle of the blow-suction composite module to fully cover the blind spots of the ion gun, effectively reducing the cleaning blind spots caused by particle shedding and contamination of the product.

The invention provides double-source ion beam micro-nano polishing equipment capable of accurately controlling temperature. The double-source ion beam micro-nano polishing equipment comprises an ion source, a sample temperature control mechanism and an ion beam current detection mechanism, the number of the ion sources is two, the two ion sources both face the sample table, each ion source comprises a protective shell, a gas introduction channel is arranged in the protective shell, a Penning ion gun, an accelerating electrode and an electrostatic lens are sequentially arranged at the gas introduction channel, and the Penning ion gun, the accelerating electrode and the electrostatic lens are all connected with the power supply module; the ionization voltage Vd of the Penning ion gun, the acceleration voltage Va of the acceleration electrode and the focusing voltage Ve of the electrostatic lens are regulated and controlled through the power supply module, the ion beam detection mechanism is used for monitoring the spatial distribution of ion beams in real time, and the sample temperature control mechanism is connected with the sample table and is used for regulating and controlling the temperature of the sample table. The device is high in processing efficiency, can efficiently control the temperature of a sample area, facilitates real-time detection, and optimizes ion beam energy distribution.

The application relates to the technical field of vacuum coating, in particular to a permeation and plating integrated coating device. The permeation and plating integrated coating device comprises a permeation and plating module, the permeation and plating module comprises a coating chamber, a coating arc source, an anode component, a first arc striking mechanism and an ion gun; the coating arc source, the first arc striking mechanism and the ion gun are connected with the coating chamber, the inside of the coating chamber is provided with a containing station for placing a workpiece, the anode component is arranged on the side of the containing station which is away from the ion gun, a working space is used for inputting nitrogen gas for nitriding or coating reaction gas, the first arc striking mechanism is arranged corresponding to the ion gun, so that the ion gun emits a hot electron beam towards the anode component. The permeation and plating integrated coating device can perform nitriding and coating treatment on the workpiece, so that nitrogen ions penetrate into the inside of the workpiece, so as to increase the hardness of the workpiece, and the film layer performance and the overall hardness performance of the treated workpiece are greatly improved.

The present invention provides an electron microscope sample preparation device and a preparation method. The preparation device includes: a processing chamber for accommodating a sample, the processing chamber forming a sealed space isolated from the external environment; a sample stage for carrying the sample during sample processing; a femtosecond laser module for performing femtosecond laser processing on the sample; and an ion gun module for performing ion processing on the sample. The electron microscope sample preparation method of the present invention first performs femtosecond laser processing on the sample, and then performs ion beam thinning processing, avoiding complex operations such as grinding and pitting in the prior art. The sample preparation can be completed on one device, reducing the number of devices and costs. Moreover, the sample remains in the processing chamber during processing without the need to transfer the sample between different devices, saving processes. Additionally, the sample is first roughly processed with a femtosecond laser and then finely processed with an ion beam, which can greatly shorten the sample preparation time.

A gas ion gun includes an anode electrode to remove electrons from a gas in order to create gas ions. The anode electrode includes a wire made of an electrical conductive material or of a semiconductor material, the wire extending along a longitudinal axis from a proximal end to a flattened distal end. The anode electrode further includes a crystal particle directly deposited on the flattened distal end, the electrical conductivity of the crystal particle being ten times smaller than the electrical conductivity of the wire.

The application discloses a real-time detection device applied to FIB (Focused Ion Beam) lithography technology, which comprises N ion guns for ion beam lithography and N electron guns for detection after ion beam lithography to ensure the quality of lithography, wherein N is greater than or equal to 1, and the ion guns and the electron guns are respectively controlled and synchronously work. The application has the following beneficial effects: the electron gun and the ion gun are separated by a certain distance, can synchronously work, can ensure that they do not interfere with each other (especially the electron gun does not interfere with the work of the ion gun), can realize real-time detection, and can greatly improve the efficiency of ion beam lithography and detection; the electron gun and the ion gun are respectively controlled, and better real-time monitoring can be realized; the electron gun is controlled and works independently, and better monitoring effect can be obtained.

The utility model relates to a semiconductor production system, in particular to a substrate foreign matter cleaning device which comprises a cleaning mechanism, the cleaning mechanism comprises an air source, an ion neutralizer and an ion gun, the downstream of the air source is connected with the ion neutralizer and used for providing air flow for the ion neutralizer, and the ion gun is connected with the air source. The downstream of the ion neutralizer is connected with the ion gun and is used for providing airflow carrying ions for the ion gun, and the output end of the ion gun is arranged towards the surface of the substrate and is used for blowing the airflow carrying ions towards the surface of the substrate; and the dust collection mechanism is arranged close to the base plate, and the receiving end of the dust collection mechanism is opposite to the output end of the ion gun, so that the foreign matter blown away by the cleaning mechanism is received by the dust collection mechanism. By the aid of the structure, foreign matters on the surface of the substrate can be removed by the aid of the cleaning mechanism before the substrate is picked up, the removed foreign matters are collected by the dust collecting mechanism, and follow-up influence on the quality of the substrate due to the foreign matters is avoided.

The ion source for the micro-nano polishing machine comprises a protective shell, a gas leading-in channel is arranged in the protective shell, a penning ion gun, an accelerating electrode and an electrostatic lens are sequentially arranged at the position of the gas leading-in channel, and the penning ion gun, the accelerating electrode and the electrostatic lens are all connected with a power module. The power supply module comprises an ionization voltage Vd applied to the penning ion gun, an acceleration voltage Va applied to the acceleration electrode and a focusing voltage Ve applied to the electrostatic lens, and the ionization voltage Vd, the acceleration voltage Va and the focusing voltage Ve are all provided by a voltage-adjustable power supply. According to the utility model, the diameter and distribution of the ion beam current can be adjusted, so that the same processing scheme can generate the same processing effect.

The invention relates to the technical field of substrate surface dynamic detection, and discloses a substrate surface dynamic detection and planarization processing method, which comprises the following steps: step 1, substrate preparation: placing a substrate to be processed at a preset position in a vacuum cavity, and ensuring that the vacuum degree in the vacuum cavity is maintained below 1 atmospheric pressure so as to ensure the stability of a processing environment; and step 2, setting an ion gun device: starting the ion gun device, adjusting working parameters of the ion gun device according to treatment requirements, including gas type, flow and power of supplied electric energy, ensuring normal work of the ion gun device, and generating stable gas ion beams. According to the method, the glossiness of the metal circuit can be monitored in real time in the etching process through dynamic glossiness detection, so that excessive etching or insufficient etching is avoided, unnecessary processing time and material waste are reduced, and the overall processing efficiency is improved.

This ion source 1 comprises: a resonance section 8 having an ion extraction port 9 for extracting ions I; an internal conductor 13 for forming a constriction section 16, which corresponds to an electric field concentration region P, between the internal conductor 13 and the ion extraction port 9 in the resonance section 8; an electromagnetic wave introduction section 14 for introducing an electromagnetic wave F that resonates in the resonance section 8; and a gas introduction section 15 for introducing a gas G, which is the source of the ions I, into the constriction section 16.

Provided is an ion milling device capable of forming a processed surface in which an amorphous layer is suppressed. This ion milling device comprises: a sample chamber provided with a gas introduction port; a sample stage installed in the sample chamber; an ion gun that is attached to the sample chamber and emits an unfocused ion beam; an electrode that can be disposed so as to face a sample placement surface of the sample stage; and a power supply that applies a voltage between the electrode and the sample stage. The sample stage is provided with a magnetic circuit.

The utility model discloses a device for preventing accumulated burls from being generated in a plasma spraying process, which comprises an outer ring connected to a plasma gun nozzle; the inner ring is fixedly connected to the inner circumference of the outer ring, the inner ring and the outer surface of the plasma gun nozzle are arranged in a spaced mode so that an air chamber can be formed between the plasma gun nozzle and the inner ring, and an air outlet of the air chamber surrounds the outer circumference of the plasma gun nozzle; and the air inlet hole is formed in the outer ring and is communicated with the air chamber. An outer ring provided by the utility model is connected to a plasma gun nozzle; the inner ring and the outer surface of the plasma gun nozzle are arranged at an interval, so that an air chamber is formed between the plasma gun nozzle and the inner ring, and an air outlet of the air chamber surrounds the periphery of the plasma gun nozzle; during use, inert gas is introduced into the gas chamber through the gas inlet hole and is sprayed out along with the gun nozzle in the spraying process, and the sprayed inert gas generates an airflow protection layer at the gun nozzle, so that powder liquid drops which are not molten in the spraying process cannot be accumulated and formed at the gun nozzle opening, and the effect of inhibiting accumulation is achieved.

This utility model discloses an ion generating device for a non-vacuum coating gun, including an ion generating gun. The ion generating gun comprises an ion gun head assembly, an ion gun body assembly, an ignition assembly, and an air inlet connector. The ignition assembly is connected to an external ignition power supply and is inserted into the ion gun body assembly, with a ventilation gap between them. The ignition assembly cooperates with the ion gun head assembly to generate ignition ionization. The air inlet connector is connected to the ion gun body assembly and is provided with an air inlet channel. The incoming air passes through the air inlet channel and the ventilation gap and is ionized into plasma gas at the ion gun head assembly. The ion generating device of this utility model has a reasonable structural design and compact size, making it easy to install and use. It has a better ionization effect, improves the contact reaction between the ionized plasma gas and the chemical solution, and further enhances the coating effect.

To provide a wiring board having via conductors with good connection reliability. [Solution] A wiring board according to an embodiment includes the steps of forming an insulating layer (111) on a conductor layer (121), irradiating the insulating layer (111) with laser light to form a through hole (11a) that penetrates the insulating layer (111) in the thickness direction and exposes the conductor layer (121), cleaning the inner surface of the through hole (11a), forming a metal film layer on the inner surface of the through hole (11a), and filling the through hole (11a) with a plating film layer to form a via conductor. The cleaning is performed by ion gun treatment, and the ion gun treatment includes forming a recess RE on the surface of the conductor layer (121) exposed in the through hole (11a).

The embodiment of the utility model provides a microwave plasma gun and an ion implanter, and the microwave plasma gun comprises a plasma chamber; the plasma chamber is used for accommodating microwaves and gas, and an electron cyclotron resonance area is formed in the plasma chamber; at least one electron escape hole is formed in the side wall of the plasma chamber; in the axial direction of the electron escape holes, the positions of the electron escape holes coaxially correspond to the positions of the electron cyclotron resonance areas, and in the direction perpendicular to the axial direction, the total sectional area of the electron escape holes is smaller than the sectional area of the electron cyclotron resonance areas. According to the technical scheme provided by the embodiment of the utility model, the leakage degree of gas in the plasma chamber can be reduced, and the working performance of the microwave plasma gun is improved.

This utility model discloses a roller bonding machine for SCA adhesive, relating to the technical field of SCA adhesive bonding machines. It includes: a base, a worktable fixedly mounted on the top surface of the base, an electrical distribution box fixedly mounted on the left side wall of the base, a controller fixedly mounted on the front side wall of the worktable, a sliding groove on the top surface of the worktable, a movable plate on the top surface of the base, and two fixed blocks fixedly mounted on the top surface of the movable plate. A detection component is included. When the SCA adhesive, due to its high elasticity and thickness, generates static electricity and tends to curl, the adhesive surface instantly attracts the metal blocks, causing the movable blocks to compress a spring and trigger a microswitch. After the detection triggers, the microswitch directly activates an ion gun. The ion air is blown directionally onto the adhesive surface through a hose and air outlet, neutralizing static electricity. This avoids the interference of ambient light and humidity that traditional photoelectric or electrostatic meter solutions are susceptible to, significantly reducing the curling rate and improving the SCA adhesive bonding yield.

This disclosure relates to a plasma cutting auxiliary device, which includes a slide rail, a slider, and a plasma gun sleeve. The slide rail is configured to be fixed to the workpiece to be cut. The slider is slidably mounted on the slide rail and configured to move linearly along the slide rail under the action of an external force. The plasma gun sleeve is detachably fixedly connected to the slider and has a mounting through hole, configured to mount the plasma gun through the mounting through hole. The slider has at least two connection positions. When the plasma gun sleeve and the slider are connected through a first connection position, the center line of the mounting through hole forms a first preset angle α with the surface to be cut. When the plasma gun sleeve and the slider are connected through a second connection position, the center line of the mounting through hole forms a second preset angle β with the surface to be cut. The angle of the first preset angle α is smaller than the angle of the second preset angle β.

The invention relates to a movable all-dimensional plasma groove cutting machine which comprises a machine body, a clamping assembly, a plasma gun and a control box, the clamping assembly, the plasma gun and the control box are arranged on the machine body, an angle correction support in shaft connection with the machine body is arranged in the machine body, and the clamping assembly comprises a fixing support installed on the angle correction support and a clamping chuck rotationally connected with the fixing support. A rotation driving motor which is in signal connection with the control box and drives the clamping chuck to rotate is installed on the angle correction support, an angle correction mechanism and an angle correction motor which drives the angle correction mechanism to drive the angle correction support to deflect are further arranged in the machine body, and the angle correction motor is in signal connection with the control box. A gyroscope in signal connection with the control box is integrated in the plasma gun. The attitude of the plasma gun is monitored through the gyroscope, dynamic angle compensation is provided for the workpiece, and the relative angle between the workpiece and the plasma gun is corrected in real time.

The utility model relates to a plasma surface treatment device for a photovoltaic irradiation cable. The plasma surface treatment device comprises a rack. The device is characterized in that two sets of plasma emission mechanisms which are oppositely arranged are arranged on the rack. The plasma emission mechanisms comprise ion generators, ion guns are arranged on the adjacent sides of the two ion generators, and the two ion guns are connected with the corresponding ion generators respectively. The muzzle ends of the ion guns are oppositely arranged, and the centers of the muzzle ends are located on the same straight line. And a distance for a processed photovoltaic irradiation cable to pass through is formed between muzzle ends of the two ion guns. And a pay-off mechanism and a take-up mechanism are respectively arranged on two sides of a connecting line center of the two ion guns. The outer end of the photovoltaic irradiation cable on the pay-off mechanism penetrates through the space and then is connected with the take-up mechanism. The device is wide in application range. The device is especially suitable for plasma treatment of an insulating layer on the surface of a photovoltaic irradiation cable.

This invention discloses a molybdenum disulfide thin-film sensor based on Raman detection and its manufacturing method, which can be used for the detection of tumor markers. The molybdenum disulfide thin-film silicon wafer is formed by layer-by-layer self-assembly of a molybdenum disulfide dispersion and a polydiallyl dimethyl ammonium chloride (PDDA) solution onto a clean silicon wafer after pretreatment with an argon plasma gun, forming a molybdenum disulfide thin film. The carboxyl groups provided by sodium cholate added during the ultrasonic activation of the molybdenum disulfide powder are utilized with EDC / NHS solution. Antibodies corresponding to tumor markers are then incubated, and after BSA blocking treatment, the corresponding tumor markers are captured and then Raman detection is performed.

An ion milling device and method to increase milling speed and lengthen a maintenance cycle, including an ion gun including a first cathode and a second cathode which face each other, the second cathode having an ion beam extraction hole; an anode provided between the first cathode and the second cathode in a state of being electrically insulated from the first cathode and the second cathode; an ionization chamber that is surrounded by the first cathode, the second cathode, and the anode and to which a gas is supplied; and a magnet. The anode has a cylindrical shape with longitudinal direction along a central axis, and has a first protrusion formed on an inner wall in contact with the ionization chamber toward the central axis in a range from a position equidistant from both end portions of the anode to the end portion facing the first cathode.

The invention provides an electron microscope for three-dimensional imaging and a three-dimensional imaging method, and relates to the technical field of electron microscopes, the electron microscope for three-dimensional imaging comprises an ion gun, a sample table and a baffle plate located between the ion gun and the sample table, the position of the sample table and / or the baffle plate can be adjusted in parallel, and the sample table and / or the baffle plate can be adjusted in parallel. Therefore, the baffle can adjustably shield an ion beam emitted by the ion gun to a sample on the sample table. Thus, an ion beam emitted by the ion gun bombards the part, not shielded by the baffle, of the sample to form a plane, after plane imaging is finished, a new unshielded part is formed on the sample by adjusting the position of the sample table and / or the baffle in parallel, bombardment continues to be conducted through the ion beam, a new plane is formed on the sample, and then imaging of the plane is completed. The new plane is parallel to the last plane, and the steps are repeated to stack the images of the plurality of planes to form three-dimensional imaging.

The utility model discloses a dust removal device of a polishing instrument, which comprises an external pipe bin, a motor is mounted in the external pipe bin, an output shaft of the motor is connected with a fan, and a dust filter screen is detachably mounted in the external pipe bin and positioned on one side of the fan. And a sealing baffle plate connected with an argon ion beam polishing instrument is arranged at one end of the external pipe bin. The polishing instrument dust removal device is externally connected to the outer wall of the instrument sample bin, dust removal operation is started in the sample polishing test interval, operation is easy, implementation is convenient, dust and chippings generated in the sample cutting process can be effectively cleaned in time, short circuit of an ion gun is reduced, cleanliness of the sample bin, a sample table and a window baffle is kept, and the service life of the polishing instrument is prolonged. The sample polishing position and progress can be accurately controlled, the number of times of instrument disassembly and maintenance is effectively reduced, ion gun short circuit and other damage caused by accumulation of sample scraps generated by cutting are effectively reduced, and the testing efficiency is improved.