99 results about "Ion gun" patented technology

An Atmospheric Pressure Chemical Ionization (APCI) source interfaced to a mass spectrometer is configured with a corona discharge needle positioned inside the APCI inlet probe assembly. Liquid sample flowing into the APCI inlet probe is nebulized and vaporized prior to passing through the corona discharge region all contained in the APCI inlet probe assembly Ions produced in the corona discharge region are focused toward the APCI probe centerline to maximize ion transmission through the APCI probe exit. External electric fields penetrating into the APCI probe exit end opening providing additional centerline focusing of sample ions exiting the APCI probe. The APCI probe is configured to shield the electric field from the corona discharge region while allowing penetration of an external electric field to focus APCI generated ions into an orifice into vacuum for mass to charge analysis. Ions that exit the APCI probe are directed only by external electric fields and gas flow maximizing ion transmission into a mass to charge analyzer. The new APCI probe can be configured to operate as a stand alone APCI source inlet probe, as a reagent ion gun for ionizing samples introduced on solids or liquid sample probes or through gas inlets in a multiple function ion source or as the APCI portion of a combination Electrospray and APCI multiple function ion source. Sample ions and gas phase reagent ions are generated in the APCI probe from liquid or gas inlet species or mixtures of both.

A plasma generating apparatus and method using a neutral beam, capable of readily generating plasma at the same gas flow rate by changing the structure of an ion gun, without a separate ignition device, are provided. The apparatus includes a plasma generating part formed of a quartz cup, a radio frequency (RF) applying antenna disposed at the periphery of the plasma generating part, a cooling water supply part disposed at the periphery of the plasma generating part, and an igniter in direct communication with the plasma generating part, wherein a gas for generating plasma is supplied into the igniter, and the igniter has a higher local pressure than the plasma generating part at the same gas flow rate. The ion gun is also cheaper to manufacture since it does not require a separate power supply.

[Task] The invention enables uniformly etching a surface of a sample with an improved repeatability, and etching at a low cost without requiring any large-scale equipment.

[Means for Solving the Problem] In an electron spectroscopy analytical apparatus (1) for executing an analysis of a composition, a chemical state and the like of a surface of a sample (4) or in a depth direction thereof by irradiating an X-ray to the sample (4) from a high-energy particle irradiating unit (6) within a vacuum chamber (2) under a vacuum atmosphere, and detecting a kinetic energy of electrons emitted from the sample (4) by an electric energy analyzer (7) on the basis of a photoelectric effect, the surface of the sample (4) is ion-etched by irradiating a fullerene ion beam to the surface of the sample (4) from an ion gun (8) before irradiating the high-energy particle to the sample (4).

Provided are an ion source, an ion gun, and an analysis instrument, which are capable of performing sputtering without damage to a surface of a sample and improving detection sensitivity in mass spectroscopy. In the ion source, an emission opening to which ionization liquid is supplied is disposed in an electric field formed in vacuum environment by an extracting electrode so that super large droplet cluster ions are generated from the emission opening. When the sample is irradiated with a super large droplet cluster ion beam, the sample surface is subjected to sputtering without damage, so as to remove contamination substances or to expose a new surface of the sample. In mass spectroscopy, detection sensitivity is improved.

Disclosed in the invention is a femtosecond laser post-ionization mass spectrum apparatus comprising a vacuum chamber, a sample fixed bracket, a primary ionization source, a post-ionization source, an ion optics system and a flight time mass spectrum unit. An ion gun or laser is used as the primary ionization source to carry out sputtering on the solid surface; and during the primary ionization source sputtering process, a sample ion and a neutral particle can be generated, wherein the neutral-particle-based sputtering part enables the accuracy and the resolution ratio of the analysis result to be limited greatly. According to the invention, the femtosecond laser is used as the post-ionization means of the neutral particle, so that the ionization efficiency of the sample is substantially improved. And the sample ionization component is analyzed by using the flight time mass spectrum way.

An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

The invention discloses an electron beam-ion beam micro and nano machining combination system, wherein the electron beam and the ion beam can be operated simultaneously, and the electron in SEM can be integrated with the positively charged ion to effectively decrease influence on observation and analysis caused by charge accumulation on the surface of sample. The electron beam-ion beam micro and nano machining combination system of the invention comprises a flange, a scan electron microscope, a focused ion beam device, a computer which is a part of the scan electron microscope, wherein the flange is arranged on the bevel of a reaction chamber of the scan electron microscope, and the ion gun of the focused ion beam is arranged in the through hole of the flange. By adopting electron beam and ion beam symmetric device, the design scheme has advantages of stabilized, simple and aesthetic structure, convenient and accurate alignment, defined image and high stabilization of sample stage etc., being beneficial to improvement of the imaging quality of the electron beam.

In accordance with the invention, the ion source of a time-of-flight mass spectrometer includes an electron gun having an electron source and at least one electrode for conditioning the flow of electrons, followed by at least one microchannel wafer for generating a pulsed secondary electron beam containing a greater number of electrons from a pulsed primary electron beam. The secondary electron beam enters a gas ionization area of an ion gun which produces a flow of ions which is then passed through the flight tube in order to be analyzed by an ion detector. This provides a high-performance ion source which is compact, sensitive and easy to integrate.

The invention discloses an ion gun used under an atmospheric pressure. The ion gun comprises a liquid introduction joint, a conductive liquid guide piece, a connecting joint, a connecting piece, a transparent tube, a spraying capillary tube, an auxiliary gas introduction tube and a metal electrode, wherein the liquid introduction joint, the conductive liquid guide piece, the connecting joint, theconnecting piece and the transparent tube are connected in sequence and are used for transmitting the liquid introduced by the liquid introduction joint; the conductive liquid guide piece and the metal electrode are respectively used for being electrically connected with the electrode joint of an outer power supply; the spraying capillary tube passes through the connecting piece and the interior of the connecting joint and is connected with the conductive liquid guide piece; the auxiliary gas introduction tube penetrates into the cavity of the connecting piece so as to provide auxiliary gas; and the metal electrode is connected with the transparent tube and the port of the metal electrode is used as the gunpoint of the ion gun.

The invention provides a precision ion polishing system and a sample clamp thereof. The precision ion polishing system comprises one or more clamping pieces which can move in planes of the clamping pieces so as to adjust the fixed positions of samples relative to ion beams of the precision ion polishing system. The invention also provides the precision ion polishing system, which comprises the sample clamps provided by the embodiment. The precision ion polishing system and the sample clamp thereof can adjust the positions of the TEM samples relative to ion guns of the precision ion polishing system so as to effectively avoid the condition that the samples are excessively polished even damaged while structures to be observed are still on the relatively thicker parts of damaged edges.

A focused ion beam apparatus includes an ion gun unit having an emitter tip, a gas supply unit that supplies gas to the tip, and an ion source gas supply source. An extracting electrode ionizes the gas adsorbed onto the surface of the tip and extracts ions by applying a voltage between the extracting electrode and the tip. A cathode electrode accelerates the ions toward a sample. An aperture member has an opening that passes therethrough a part of the ion beam ejected from the ion gun unit, and a lens system focuses the ion beam onto the sample.

The invention relates to a rectangular etching ion gun which comprises a first pole shoe, a second pole shoe, a third pole shoe, a fourth pole shoe, a first magnet, a second magnet, a fourth pole shoe, a rectangular annular upper anode, a rectangular annular lower anode, a rectangular conical surface, an arc plate-shaped screen grid, an arc plate-shaped accelerating grid, a base, a cathode lamp, a lamp filament and an inflating pipe, wherein the first pole shoe, the second pole shoe, the third pole shoe and the fourth pole shoe are coaxially arranged from bottom to top; the first magnet is positioned between the end surfaces of the first pole shoe and the second pole shoe; the second magnet is positioned between the end surfaces of the second pole shoe and the third pole shoe; the fourth pole shoe is positioned on the end surface of the third pole shoe; the rectangular annular upper anode is positioned in the second magnet; the rectangular annular lower anode is positioned between the first magnet and a rectangular pipe; the rectangular conical surface with high outside and low inside is arranged on the upper end surface of the rectangular annular lower anode; the arc plate-shaped screen grid is overlapped at the upper end surface of the fourth pole shoe; the arc plate-shaped accelerating grid is suspended on the screen grid; the base is arranged in the center of the lower surface of the first pole shoe and covers an inner hole of the rectangular pipe; the cathode lamp is fixed on the base and positioned in the rectangular pipe; the lamp filament is positioned in a rectangular ring of the rectangular annular upper anode; and the inflating pipe is positioned between the rectangular pipe and the cathode lamp after penetrating through the base and communicated with an argon source. The invention has the advantages of less etching gas dosage, small size, low power consumption, even ion beam, and the like.

An apparatus for depositing and aligning an amorphous film in a single step, a method of forming an aligned film on a substrate in a single step by combining the deposition and alignment of an alignment layer into a single-step using ion beam processing and an amorphous film having an aligned atomic structure prepared by a method in which an aligned film is deposited and aligned in a single step are provided. The film is deposited and aligned in a single step by bombarding a substrate with an ion beam at a designated incident angle to simultaneously (a) deposit the film onto the substrate and (b) arrange an atomic structure of the film in at least one predetermined aligned direction.

A switchable ion gun switchable between a cluster mode setting for producing an ion beam substantially comprising ionised gas clusters and an atomic mode setting for producing an ion beam substantially comprising ionised gas atoms, comprising:

• • a source chamber having a first gas inlet;
  • a gas expansion nozzle for producing gas clusters in the presence of gas atoms by expansion of a gas from the source chamber through the nozzle;
  • an ionisation chamber for ionising the gas clusters and gas atoms; wherein the ionisation chamber has a second gas inlet for admitting gas directly into the ionisation chamber to form ionised gas atoms; and
  • a variable mass selector for mass selecting the ionised gas clusters and ionised gas atoms to produce an ion beam variable between substantially comprising ionised gas clusters and substantially comprising ionised gas atoms.