Preparation method of transmission electron microscopy film sample for in-situ application of electric field and stress

Abstract

The present invention provides a preparation method of a transmission electron microscopy film sample for in-situ application of the electric field and the stress. The preparation method comprises: (1) cutting a film to be detected and a single crystal Si substrate into a strip shape with a size of 3 mm*1 mm*0.5 mm, and adhering the film surface of the film strip and the polishing surface of the Si strip; (2) carrying out mechanical grinding and polishing on both surfaces having the film strip thickness; (3) using a nail thinning instrument to carry out nail thinning; (4) adhering a half copper ring; and (5) selecting an ion thinning instrument to carry out ion thinning, setting the ion gun voltage to 4 kV, setting the angle to 6 DEG, thinning for 20-40 min, changing the angle into 4 DEG, thinning for 15-30 min, and finally polishing for 3 min by adopting the angle of 3 DEG and the voltage of 3 kV so as to obtain the large area perforation on the adhering seam, wherein the large area adhered Si sheet is bombarded, the film is exposed, the electric field and the stress can be applied by using the probe, and the large area thin region suitable for observation by the transmission electron microscopy exists on the edge.

Description

technical field [0001] The invention belongs to the technical field of in-situ transmission electron microscopy research on epitaxial thin film materials, and specifically relates to a preparation method and application of a transmission electron microscope sample suitable for in-situ stress and electric field applied to epitaxial thin films. Background technique [0002] The in-situ transmission electron microscopy technology not only has the high-resolution ability of the transmission electron microscope, but also can observe the structural changes of the material in real time at the atomic scale in situ, and can also apply external fields (such as stress, electric field and optical signal, etc.) simultaneously. It is the core of modern material research. It is an important technical means, which can be widely used in the research of the growth or force deformation of nanomaterials, the influence of electricity and magnetic field on the structure and performance of material...

AI Technical Summary

Problems solved by technology

The thin area prepared by this method is in the center of the copper ring and the single crystal substrate, and the thin film in the thin area is surrounded by the ring and the single crystal substrate, which cannot provide the required positioning and movement of the nanoprobe loaded with mechanical stress and electrical signals. space

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