A thin film sample preparation method for in situ applied electric field and stress for transmission electron microscopy

Abstract

The invention proposes a thin film sample preparation method for in situ application of electric field and stress for a transmission electron microscope. The steps are (1) cutting the thin film to be tested and the single crystal Si substrate into strips of 3mm×1mm×0.5mm, and then sticking the film surface of the thin film strip to the polished surface of the Si strip; (2) cutting the thickness of the thin film strip Both sides are mechanically ground and polished, (3) use a nail thinner for nail thinning, (4) bond the half copper ring, (5) use an ion thinner for ion thinning, set the ion gun voltage to 4kV, and set the angle Set at 6°, thinning for 20-40 minutes; change the angle to 4°, thinning for 15-30 minutes, and finally use a voltage of 3kV, and polish at an angle of 3° for 3 minutes to obtain a large area of ​​perforation at the bonding seam, and a large area of ​​the bonding Si sheet. The area is bombarded by ions, exposing the film, which can be applied with electric field and stress by probe, and there is a large thin area suitable for electron microscope observation at the edge.

Description

technical field [0001] The invention belongs to the technical field of in-situ transmission electron microscopy research on epitaxial thin film materials, and specifically relates to a preparation method and application of a transmission electron microscope sample suitable for in-situ stress and electric field applied to epitaxial thin films. Background technique [0002] The in-situ transmission electron microscopy technology not only has the high-resolution ability of the transmission electron microscope, but also can observe the structural changes of the material in real time at the atomic scale in situ, and can also apply external fields (such as stress, electric field and optical signal, etc.) simultaneously. It is the core of modern material research. It is an important technical means, which can be widely used in the research of the growth or force deformation of nanomaterials, the influence of electricity and magnetic field on the structure and performance of material...

AI Technical Summary

Problems solved by technology

The thin area prepared by this method is in the center of the copper ring and the single crystal substrate, and the thin film in the thin area is surrounded by the ring and the single crystal substrate, which cannot provide the required positioning and movement of the nanoprobe loaded with mechanical stress and electrical signals. space

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