60results about "Discharge tube ion guns" patented technology

A closed drift ion source which includes a channel having an open end, a closed end, and an input port for an ionizable gas. A first magnetic pole is disposed on the open end of the channel and extends therefrom in a first direction. A second magnetic pole disposed on the open end of the channel and extends therefrom in a second direction, where the first direction is opposite to the second direction. The distal ends of the first magnetic pole and the second magnetic pole define a gap comprising the opening in the first end. An anode is disposed within the channel. A primary magnetic field line is disposed between the first magnetic pole and the second magnetic pole, where that primary magnetic field line has a mirror field greater than 2.

An ion beam device according to the present invention includes a gas field ion source (1) including an emitter tip (21) supported by an emitter base mount (64), a ionization chamber (15) including an extraction electrode (24) and being configured to surround the emitter tip (21), and a gas supply tube (25). A center axis line of the extraction electrode (24) overlaps or is parallel to a center axis line (14A) of the ion irradiation light system, and a center axis line (66) passing the emitter tip (21) and the emitter base mount (64) is inclinable with respect to a center axis line of the ionization chamber (15). Accordingly, an ion beam device including a gas field ion source capable of adjusting the direction of the emitter tip is provided.

An apparatus for producing ions can include an emitter having a first end and a second end. The emitter can be coated with an ionic liquid room-temperature molten salt. The apparatus can also include a power supply and a first electrode disposed downstream relative to the first end of the emitter and electrically connected to a first lead of the power supply. The apparatus can also include a second electrode disposed downstream relative to the second end of the emitter and electrically connected to a second lead of the power supply.

The invention provides an ion source comprising first and second cathode pole pieces spaced apart from one another to form a cavity therebetween, an edge of the first cathode pole piece being spaced apart from an edge of the second cathode pole piece to define an elongate cathode gap between the respective edges of the pole pieces, the elongate cathode gap having a longitudinal axis; at least one magnet arranged for magnetising the first and second cathode pole pieces with opposite magnetic polarities; an elongate anode located in the cavity, the anode being spaced apart from the first and second cathode pole pieces and having a longitudinal axis, the longitudinal axis of the elongate anode and the longitudinal axis of the elongate cathode gap substantially coplanar; a first electrical connection which extends from outside the cavity to the anode; and a gas feed conduit which extends from outside the cavity to inside the cavity for introducing a gas into the cavity.

A method and apparatus for treating material surfaces using a repetitively pulsed ion beam. In particular, a method of treating magnetic material surfaces in order to reduce surface defects, and product amorphous fine grained magnetic material with properties that can be tailored by adjusting treatment parameters of a pulsed ion beam. In addition, to a method of surface treating materials for wear and corrosion resistance using pulsed particle ion beams.

In certain example embodiments of this invention, there is provide an ion source including an anode and a cathode. In certain example embodiments, the cathode does not overhang over the anode, or vice versa. Since no, or fewer, areas of overhang are provided between the anode and cathode, there is less undesirable build-up on the anode and / or cathode during operation of the ion source so that the source can run more efficiently. Moreover, in certain example embodiments, an insulator such as a ceramic or the like is provided between the anode and cathode.

Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 μm, with inter-aperture spacings of 12 μm. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.

The invention comprises a negative ion source method and apparatus used as part of an ion beam injection system, which is used in conjunction with multi-axis charged particle or proton beam radiation therapy of cancerous tumors. The negative ion source preferably includes an inlet port for injection of hydrogen gas into a high temperature plasma chamber. In one embodiment, the plasma chamber includes a magnetic material, which provides a magnetic field barrier between the high temperature plasma chamber and a low temperature plasma region on the opposite side of the magnetic field barrier. An extraction pulse is applied to a negative ion extraction electrode to pull the negative ion beam into a negative ion beam path, which proceeds through a first partial vacuum system, through an ion beam focusing system, into the tandem accelerator, and into a synchrotron.

The invention comprises a negative ion beam source vacuum method and apparatus used as part of an ion beam injection system, which is used in conjunction with multi-axis charged particle or proton beam radiation therapy of cancerous tumors. The negative ion beam source contains a vacuum chamber isolated by a vacuum barrier from the vacuum tube of the synchrotron. The negative ion beam source vacuum system preferably includes: a first pump turbo molecular pump, a large holding volume, and a semi-continuously operating pump. By only pumping ion beam source vacuum chamber and by only semi-continuously operating the ion beam source vacuum based on sensor readings about the holding volume, the lifetime of the semi-continuously operating pump is extended.

A hot cathode includes: a hollow external conductor; a hollow internal conductor which is placed coaxially inside the external conductor; and a connection conductor which electrically connects tip end portions of the conductors. A heating current is folded back through the connection conductor to flow in opposite directions in the external conductor and the internal conductor.

Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 μm, with inter-aperture spacings of 12 μm. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.

A deceleration apparatus capable of decelerating a short spot beam or a tall. ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.

The invention provides an organic electronic device comprising: (i) a multilayer cathode (10) comprising: (a) a conductive layer (12) that is electrically connected as a bus, (b) a layer (14) comprising at least one source of alkali metal ions, alkaline earth metal ions, or lanthanide ions and (c) a conductive metal layer (16) comprising at least one conductive metal species; (ii) at least one electro-active organic layer (22); and (iii) an anode (24) that is electrically connected to the conductive metal layer.

Disclosed is an ion gate for a dual IMS and method. The ion gate includes an ion source, a first gate electrode placed on one side of the ion source, a second gate electrode placed on the other side of the ion source, a third gate electrode placed on the side of the first gate electrode away from the ion source, a fourth gate electrode placed on the side of the second gate electrode away from the ion source, wherein during the ion storage, the potential at the position on the tube axis of the ion gate corresponding to the first gate electrode is different from the potentials at the positions on the tube axis corresponding to the ion source and the third gate electrode, and the potential at the position on the tube axis corresponding to the second gate electrode is different from the potentials at the positions on the tube axis corresponding to the ion source and the fourth gate electrode. According to the present invention, after sample gas enters the ion gates, charge exchange with reaction ions occurs between the first gate electrode and the second electrode, and positive and negative ions are continuously stored into the storage regions for the positive and negative ions. This leads to an improvement of utility rate of ions. Then, the ions are educed in a step-wise manner from the storage regions for the positive and negative ions by a simple control of a combination of the electrodes.

A method for generating an ultrashort charged particle beam, comprising creating a high intensity longitudinal E-field by shaping and tightly focusing, in an on-axis geometry, a substantially radially polarized laser beam, and using the high intensity longitudinal E-field for interaction with a medium to accelerate charged particles.

Devices are disclosed that incorporate an ionization device for generating ions and electrons having first and second conductive electrodes that are separated by less than the mean-free-path of molecules being ionized. Electrons generated by the ionization device may be used for applications such as light sources, electron bombardment sensors, thyratrons, vacuum tubes, plasma displays, and microwave switches, and ions generated by the ionization device may be used, inter alia, in connection with ion focused milling devices, maskless ion implantation devices, ion beam lithography devices, semiconductor mask modification devices, and semiconductor chip wiring devices. Methods of use and manufacture are also provided.

Disclosed is an ion gate for a dual IMS and method. The ion gate includes an ion source, a first gate electrode placed on one side of the ion source, a second gate electrode placed on the other side of the ion source, a third gate electrode placed on the side of the first gate electrode away from the ion source, a fourth gate electrode placed on the side of the second gate electrode away from the ion source, wherein during the ion storage, the potential at the position on the tube axis of the ion gate corresponding to the first gate electrode is different from the potentials at the positions on the tube axis corresponding to the ion source and the third gate electrode, and the potential at the position on the tube axis corresponding to the second gate electrode is different from the potentials at the positions on the tube axis corresponding to the ion source and the fourth gate electrode. According to the present invention, after sample gas enters the ion gates, charge exchange with reaction ions occurs between the first gate electrode and the second electrode, and positive and negative ions are continuously stored into the storage regions for the positive and negative ions. This leads to an improvement of utility rate of ions. Then, the ions are educed in a step-wise manner from the storage regions for the positive and negative ions by a simple control of a combination of the electrodes.

A spherical aberration corrector is offered which permits a correction of deviation of the circularity of at least one of an image and a diffraction pattern and a correction of on-axis aberrations to be carried out independently. The spherical aberration corrector (100) is for use with a charged particle beam instrument (1) for obtaining the image and the diffraction pattern and has a hexapole field generating portion (110) for producing plural stages of hexapole fields, an octopole field superimposing portion (120) for superimposing an octopole on at least one of the plural stages of hexapole fields to correct deviation of the circularity of at least one of the image and diffraction pattern, and a deflection portion (130) for deflecting a charged particle beam.

A high voltage output device in accordance with the present invention, which comprises a transformer that amplifies a voltage being fed to a primary side coil thereof so as to be produced from a secondary side coil thereof, and in which an alternate current input voltage is fed from the primary side coil, and an output voltage is taken out from the secondary side coil, further comprises a feedback circuit that feeds back the output voltage, and a voltage amplifying circuit that amplifies the voltage being fed back so as to be fed to the primary side coil. As a result, it is possible to provide such a high voltage output device as can obtain an output voltage efficiently, although a load capacity on a secondary side of a transformer fluctuates.

The invention discloses a multifunctional ion gun which comprises an ionization chamber, a first lens, a second lens, a first deflecting plate, a second deflecting plate, a slot, a four-way flange, a transition flange and a cone-shaped cylinder. The ionization chamber, the first lens and first deflecting plate are placed in a pipeline of the four-way flange. The first lens is placed between the ionization chamber and the first deflecting plate. The first deflecting plate is placed at the near end of the transition flange. The ionization chamber is arranged at the far end of the transition flange. The second lens, the second deflecting plate and the slot are placed in the cone-shaped cylinder. The second deflecting plate is placed between the second lens and the slot. The second lens is arranged at the near end of the transition flange. The slot is formed in the far end of the transition flange. The four-way flange and the cone-shaped cylinder are connected through the transition flange. The purposes that the structure is compact, functions are various, performance is stable, and ion beam transmission distance is enhanced are achieved.

An integrated field emission array for ion desorption includes an electrically conductive substrate; a dielectric layer lying over the electrically conductive substrate comprising a plurality of laterally separated cavities extending through the dielectric layer; a like plurality of conically-shaped emitter tips on posts, each emitter tip / post disposed concentrically within a laterally separated cavity and electrically contacting the substrate; and a gate electrode structure lying over the dielectric layer, including a like plurality of circular gate apertures, each gate aperture disposed concentrically above an emitter tip / post to provide a like plurality of annular gate electrodes and wherein the lower edge of each annular gate electrode proximate the like emitter tip / post is rounded. Also disclosed herein are methods for fabricating an integrated field emission array.