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Deposition method capable of enhancing preferred orientation growth of AlN film

A technology of preferred orientation and deposition method, which is applied in the field of AlN film preparation process, can solve the problems of polluting AlN film, increasing process cost, complex process, etc., and achieves the effects of reducing surface roughness, increasing propagation speed, and simple process operation

Active Publication Date: 2010-09-08
湖南特瑞精密医疗器械有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Domestic Wang Lianwei et al. used pulsed laser deposition of ZnO as a transition layer, and then deposited AlN film, which can significantly improve the preferred orientation degree of the (002) crystal plane of the film and reduce the surface roughness of the film, but the bonding strength of the film is not ideal (ZL 99125749.9 )
Although these transition layers can reduce the internal stress to a certain extent and improve the quality of the film, due to the use of heterogeneous transition layers, the AlN film is heteroepitaxially grown, and there are still internal stress, lattice mismatch and mutual interaction between the transition layer and the AlN film. Diffusion etc.
Among these heterogeneous transition layers, the preparation process of transition layers such as 3C-SiC and TiN is different from that of AlN thin films, and the cost is high. If they are deposited in the same vacuum chamber, elements such as Si and Ti may contaminate AlN thin films.
ZnO and Al 2 o 3 Although the oxide transition layer can significantly improve the preferred orientation of the AlN film, the presence of oxygen should be avoided when depositing the AlN film. Therefore, it is difficult to deposit the oxide transition layer and the AlN film in the same vacuum chamber. The process becomes complicated and the cost of the process increases; there are also studies using a homogeneous transition layer, such as Liu Chang et al., who used AlN buffer layers and AlN thin films to grow alternately to prepare high-quality thin films with smooth surfaces, but the substrate temperature was higher than 500 ° C ~ 780°C, and the process is more complicated (ZL200810048681.3)

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  • Deposition method capable of enhancing preferred orientation growth of AlN film
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  • Deposition method capable of enhancing preferred orientation growth of AlN film

Examples

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Embodiment 1

[0033] Example 1 Deposition of (002) oriented AlN thin film on Si substrate: (100) single crystal silicon wafer was used as the substrate, followed by ultrasonic cleaning with acetone and alcohol, drying and loading into ion beam magnetron sputtering composite coating equipment vacuum On the indoor sample stage, use 600eV / 50mA Ar before coating + The surface of the silicon wafer was cleaned by beam bombardment for 15 minutes. Use ion beam assisted deposition of homogeneous transition layer, that is, while sputtering Al target with ion beam, use another beam of energy N + The ion beam performs auxiliary bombardment, and the specific process is shown in Table 2. After the transition layer is deposited, without breaking the vacuum, the sample stage is transferred from the ion beam coating position to the magnetron sputtering coating position through the rotating device, and the process conditions are adjusted to the magnetron sputtering coating conditions, using pulsed reactive mag...

Embodiment 2

[0043] Example 2 Preparation of AlN film on diamond substrate: In the application of surface acoustic wave devices, the diamond substrate has a high acoustic wave velocity (18000m / s) and the highest elastic modulus (1200GPa). In the case of electrode width, the operating frequency of the device can be increased, so diamond is used as the substrate to prepare AlN film.

[0044] Process flow: diamond substrateacetone ultrasonic cleaning for ten minutes → alcohol ultrasonic cleaning for ten minutes → drying → loading on the sample table in the vacuum chamber of the ion beam magnetron sputtering composite coating device (substrate temperature 500 ℃ and rotating) → use 600eV, 50mA low energy Ar + Beam bombardment cleaning the surface of the silicon wafer for 15 minutes → ion beam assisted deposition of a homogeneous transition layer (see Table 2 for the specific process) → pulsed reactive magnetron sputtering deposition of AlN film for four hours (see Table 3 for the specific proces...

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Abstract

The invention relates to a deposition method capable of enhancing the preferred orientation growth of an AlN film. The deposition method comprises the following steps: adopting an ion beam-assisted deposition technique to prepare an AlN homogeneous transition layer: when using an Ar + ion beam of 2.0-2.5keV / 20-50mA for depositing an Al film in a sputtering way on a substrate, using a moderate-energy N+ ion beam of 20-35keV / 2-8mA for bombarding the Al film in an assisting way; and then depositing the AlN film by adopting magnetron sputtering, wherein base pressure is less than or equal to 5x10<-4>Pa, working air pressure is 0.5-10Pa and substrate temperature is 200 DEG C-500 DEG C. Through pre-depositing the homogeneous transition layer, the invention has the advantages that the internal stress between the film and the substrate can be effectively reduced, the full (002) orientation AlN film is formed, the surface roughness of the film is reduced, the bonding strength between the film and the substrate is increased and the film product can satisfy the requirements on the application in surface acoustic wave devices, acoustic bulk wave devices and other microelectronic devices and power devices.

Description

Technical field [0001] The invention relates to an AlN film preparation process, and further refers to a deposition method for enhancing the growth of the AlN film in a preferred orientation. Background technique [0002] AlN (aluminum nitride) film has many excellent properties such as forbidden bandwidth, high thermal conductivity, high resistivity, high breakdown electric field strength, low dielectric coefficient, good chemical stability and strong corrosion resistance, and has a wide range of applications Among them, AlN film is an ideal piezoelectric material due to its high acoustic wave propagation speed and large piezoelectric coupling coefficient, and is particularly suitable for making surface acoustic wave (SAW) devices and bulk wave (BAW) devices in the GHz band. Since the surface acoustic wave velocity of the c-axis (002) orientation of the AlN film is 11354m / s, which is greater than the surface acoustic wave velocity of the a-axis orientation (100) of 5500m / s, and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/46C23C14/35
Inventor 周灵平李智朱家俊彭坤
Owner 湖南特瑞精密医疗器械有限公司
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