Deposition method capable of enhancing preferred orientation growth of AlN film
A technology of preferred orientation and deposition method, which is applied in the field of AlN film preparation process, can solve the problems of polluting AlN film, increasing process cost, complex process, etc., and achieves the effects of reducing surface roughness, increasing propagation speed, and simple process operation
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Embodiment 1
[0033] Example 1 Deposition of (002) oriented AlN thin film on Si substrate: (100) single crystal silicon wafer was used as the substrate, followed by ultrasonic cleaning with acetone and alcohol, drying and loading into ion beam magnetron sputtering composite coating equipment vacuum On the indoor sample stage, use 600eV / 50mA Ar before coating + The surface of the silicon wafer was cleaned by beam bombardment for 15 minutes. Use ion beam assisted deposition of homogeneous transition layer, that is, while sputtering Al target with ion beam, use another beam of energy N + The ion beam performs auxiliary bombardment, and the specific process is shown in Table 2. After the transition layer is deposited, without breaking the vacuum, the sample stage is transferred from the ion beam coating position to the magnetron sputtering coating position through the rotating device, and the process conditions are adjusted to the magnetron sputtering coating conditions, using pulsed reactive mag...
Embodiment 2
[0043] Example 2 Preparation of AlN film on diamond substrate: In the application of surface acoustic wave devices, the diamond substrate has a high acoustic wave velocity (18000m / s) and the highest elastic modulus (1200GPa). In the case of electrode width, the operating frequency of the device can be increased, so diamond is used as the substrate to prepare AlN film.
[0044] Process flow: diamond substrate → acetone ultrasonic cleaning for ten minutes → alcohol ultrasonic cleaning for ten minutes → drying → loading on the sample table in the vacuum chamber of the ion beam magnetron sputtering composite coating device (substrate temperature 500 ℃ and rotating) → use 600eV, 50mA low energy Ar + Beam bombardment cleaning the surface of the silicon wafer for 15 minutes → ion beam assisted deposition of a homogeneous transition layer (see Table 2 for the specific process) → pulsed reactive magnetron sputtering deposition of AlN film for four hours (see Table 3 for the specific proces...
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