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43results about How to "Change surface topography" patented technology

Calcium-phosphorus-silicon biological ceramic coating and preparation method and application thereof

The invention discloses a calcium-phosphorus-silicon biological ceramic coating and a preparation method and application thereof. After magnesium and alloy of magnesium are put in a calcium-phosphorus electrolyte for powered-on electrolysis for a set time, a sample containing a calcium-phosphorus coating is put in a silicon salt electrolyte for powered-on electrolysis, and the target biological ceramic coating is obtained; and the calcium-phosphorus electrolyte is prepared by adding calcium salt and (NaPO3)6 into a basic electrolyte, and the silicon salt electrolyte is prepared by adding silicate into the basic electrolyte. A compact layer is connected with a basal body, the compact layer and the basal body are tightly combined, and the mechanical property of the basal body can be improved; in addition, pores barely exist in the compact layer, body fluid can be prevented from flowing to the surface of the basal body to make contact with the basal body, metal ions generated after the basal body is corroded also can be prevented from being diffused to the human body, toxicity is reduced, and biocompatibility is effectively improved; and a surface layer is a porous loose layer, combination of an implant and a bone can be effectively improved in the presence of micro-pores, growth of adherence bone tissue of bone cells can be effectively improved, and the biological activity of the coating can be improved.
Owner:SHANDONG UNIV

Method for improving wetting and spreading performance of reaction wetting system material

The invention discloses a method for improving the wetting and spreading performance of a reaction wetting system material. The method comprises the following steps that the surface of a stainless steel base plate is scanned and processed by adopting an ultrafast laser processing technology to obtain a micro-nano stripe texture of which the stripe average width is 1.2-1.4 microns and the stripe average spacing is 1.4-1.6 microns; and the wetting angle of the same brazing filler metal on the scanned and processed stainless steel base plate is 0.9 degrees - 3.3 degrees smaller than the wetting angle of the same brazing filler metal on an unprocessed stainless steel base plate. According to the method, microtexture processing is carried out on the surface of the reaction wetting system material through ultrafast laser, the surface appearance of the reaction wetting system material is changed, the surface roughness is changed, the unique morphology of the micro-nano stripe texture is obtained, and the unique morphology of the micro-nano stripe texture can greatly enhance the capillary action in the brazing filler metal wetting and spreading process, so that the wetting and spreading power of the brazing filler metal on the surface of the reaction wetting system material is improved, the brazing filler metal reacts with the base plate more sufficiently, and the application prospectis great.
Owner:SHANGHAI UNIV OF ENG SCI

Method of adopting plasma technology to treat silver nanowires and transferring through substrate to prepare organic photoelectronic device flexible electrode

The invention discloses a method of adopting plasma technology to treat silver nanowires and transferring through a substrate to prepare an organic photoelectronic device flexible electrode and belongs to the technical field of organic photoelectronics. The method includes: preparing a silver nanowire solution, spin-coating the silver nanowires on a silicon wafer to obtain a silver nanowire thin film, and treating the silver nanowire thin film through plasma, wherein PVP on the surfaces of the nanowires is removed, and surface appearance of the silver nanowires is changed; spin-coating photo-crosslinking polymer on the silicon wafer to complete cover the silver nanowire thin film, using an ultraviolet lamp to irradiate, and using a scalpel to separate the photo-crosslinking polymer from the silicon substrate to finally obtain a high-conductivity silver nanowire transparent electrode. By the method, surface roughness of the silver nanowire thin film is lowered while surface uniformity of the same is improved, the OLED flexible electrode obtained by the method is better than electrodes obtained through conventional thermal treatment methods in conductivity, and more time is saved.
Owner:JILIN UNIV

Supercapacitor electrode material and preparation method thereof

The invention discloses a supercapacitor electrode material and a preparation method thereof. The preparation method comprises the following steps of: by taking potassium permanganate as a reducing agent and manganese sulfate as a manganese source, preparing sea urchin-shaped nano alpha-MnO2 by adopting a hydrothermal method, then performing hydroxylation modification, grafting polyimide resin tothe sea urchin-shaped nano alpha-MnO2 by adopting a click chemistry mode to obtain the sea urchin-shaped nano alpha-MnO2 grafted polyimide resin, and carrying out high-temperature activation treatmenton the sea urchin-shaped nanometer alpha-MnO2 grafted polyimide resin by adopting potassium hydroxide to obtain the sea urchin-shaped nanometer alpha-MnO2 in-situ modified porous carbon supercapacitor electrode material. By using the electrode material, the defects of MnO2 crystal lattices are improved, the conductivity and stability of electrons are improved, protons and the electrons can freelyflow among the crystal lattices, rapid transmission of ions and the electrons of an interface is guaranteed, the charge transfer path can be shortened, more active sites are provided for charge storage, the electron trapping and transfer capacity is enhanced, and the mechanical stability is also improved.
Owner:犀望新能源科技(昆山)有限公司

Epitaxial wafer of light emitting diode and manufacturing method of epitaxial wafer of light emitting diode

The invention discloses an epitaxial wafer of a light emitting diode and a manufacturing method of the epitaxial wafer of the light emitting diode. The manufacturing method relates to a low-temperature buffer layer GaN, an undoped GaN layer, a Si-doped N-type GaN layer, a light emitting layer, a P-type GaN layer and a high-temperature P-type GaN layer, wherein the undoped GaN layer is located on the low-temperature buffer layer GaN, the Si-doped N-type GaN layer is located on the undoped GaN layer, the light emitting layer is located on the Si-doped N-type GaN layer, the P-type GaN layer is located on the light emitting layer, and the high-temperature P-type GaN layer is located on the P-type GaN layer. The light emitting layer comprises InGaN layers and GaN layers in a plurality of periods, and the InGaN layer in each period grows through time slicing. By means of the epitaxial wafer of the light emitting diode and the manufacturing method of the epitaxial wafer of the light emitting diode, InGaN of the light emitting layer grows in a subsection mode, the feature of the surface can be changed, the surface migration rate of In atoms is improved, and the light emitting rate of the light emitting diode is accordingly improved.
Owner:XIANGNENG HUALEI OPTOELECTRONICS

A kind of transparent electrode of light-emitting diode and preparation method thereof

The invention provides a transparent electrode of a light-emitting diode. A preparation method of the transparent electrode comprises the following steps: S1, carrying out chemical cleaning on the surface of an epitaxial wafer, then putting the epitaxial wafer into an MOCVD reaction chamber with temperature of 300-900 DEG C and pressure of 3-100 Torr, and treating for 1-60 minutes; S2, under the protective atmosphere, adjusting the growth temperature to 450-650 DEG C, adjusting the pressure of the reaction chamber to 3-80 Torr, then, introducing an indium source, a tin source and an oxygen source, controlling the growth speed to 0.1-3 nm / min, and growing an ITO main body layer with the thickness of 40-500 nm on the surface of the pretreated epitaxial wafer; and S3, under the protective atmosphere, adjusting the growth temperature to 300-450 DEG C, adjusting the pressure of the reaction chamber to 3-80 Torr, then, introducing an indium source, a tin source and an oxygen source, controlling the growth speed to 1-10 nm / min, and growing an ITO coarsening layer with the thickness of 20-200 nm on the ITO main body layer. The method for in-situ growth of the coarsening layer is very matched with the preparation method of a main body layer of the ITO transparent electrode, subsequent complex process treatment is avoided, and the light extraction efficiency of the LED can be effectivelyimproved.
Owner:SUN YAT SEN UNIV +1

Preparation method and application of laser-induced graphene without pinning effect

The invention relates to the technical field of super-hydrophobic materials, and discloses a preparation method and application of pinning-effect-free laser-induced graphene, and the preparation method comprises the following steps: ultrasonically cleaning a polyimide film with deionized water; designing a graphene pattern needing to be processed, and guiding the pattern into a laser engraving machine; setting the laser power and the engraving speed of a laser engraving machine, and carrying out laser treatment on the polyimide film to obtain laser-induced graphene with a pinning effect; the method comprises the following steps: dropwise adding an organic solvent on the surface of graphene or soaking graphene in the organic solvent, and airing at room temperature to obtain the laser-induced graphene without pinning effect. According to the method disclosed by the invention, the laser-induced graphene without the pinning effect can be prepared, the process cost is low, and the method is efficient and stable, and the prepared laser-induced graphene without the pinning effect has super-hydrophobicity and has a good application prospect in the fields of analyte concentration detection, oil-water separation, icing prevention and the like.
Owner:SHANDONG UNIV

Copper sheet surface treatment method

The invention provides a copper sheet surface treatment method, which is characterized in that a sand blasting process is used for treating a copper sheet, and carborundum suspension is sprayed to a copper surface at a high speed so as to change the surface appearance of the copper surface and eliminate stripe-shaped defects of the copper sheet in a machining process; when the copper surface defects (impurities, oil stains, stains and oxidation) are removed, certain roughness can be formed on the surface of the copper sheet, a certain surface area is increased for the subsequent process (copper sheet oxidation), and the wettability of DCB sintering is improved; then, nanometer copper coated with the titanium dioxide and the copper sheet subjected to sand blasting are connected in a physical melting mode through laser, a first-stage coarse structure obtained after sand blasting treatment of the copper sheet is modified and optimized to form a third-stage micro-nano structure, the surface roughness of the copper sheet can be adjusted and controlled, and the surface roughness of the copper sheet is made to be uniform; and the nano-copper coated with the titanium dioxide and the micropore structure on the copper sheet synergistically improve the anti-rust hydrophobicity of the copper sheet, so that the service life of the copper sheet is prolonged.
Owner:江苏富乐华半导体科技股份有限公司
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