35results about How to "Improve surface mobility" patented technology

Sanitary tissue products employing fibrous structures that exhibit novel combination of average TS7 values and slip stick coefficient of friction and/or compressibility properties and methods for making same.

A silicon oxide film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A liquid Si—C—O—H precursor is vaporized. A flow of the vaporized liquid Si—C—O—H precursor is provided to the substrate processing chamber. A gaseous oxidizer is also flowed to the substrate processing chamber. A deposition plasma is generated inductively from the precursor and the oxidizer in the substrate processing chamber, and the silicon oxide film is deposited over the substrate and within the gap with the deposition plasma.

A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom electrode layer, an insulative layer having an opening formed therein, an active material layer deposited over both the insulative layer, within the opening, and over selected portions of the bottom electrode, and a top electrode layer deposited over the active material layer. The device uses temperature and pressure control methods to increase surface mobility in an active material layer, thus providing complete coverage or fill of the openings in the insulative layer, selected exposed portions of the bottom electrode layer, and the insulative layer.

An AlN epitaxial layer and preparation method thereof relate to the field of semiconductor epitaxy technology. According to the invention, an N polarity isolation layer grows at a comparatively low temperature, so that the N polarity is isolated well and single Al polarity is formed. Then a nucleating layer is formed on the N-polarity isolation layer at a medium temperature. The surface transfer ability of Al atoms at the medium temperature is improved and the quality of the nucleating layer is improved. The temperature is increased further and a defect repairing layer is settled on the nucleating layer at a comparatively high temperature, so that spot defect concentration can be reduced in a condition with stress release and dislocation annihilation. Finally, the temperature is increased continually and the high transfer ability of the Al atoms is kept at a high temperature, so that quick settlement on the basis of the defect repairing layer is realized and the growth efficiency is improved. The preparation method provided by the invention is simple in technique, convenient to operate and provides high growth efficiency. The AlN epitaxial layer prepared by adopting the preparation method has characteristics of smooth surface, single Al polarity and low dislocation annihilation.

The invention relates to the field of semiconductors, and particularly discloses a method for overcoming a surface defect of polycrystalline silicon. The method specifically comprises the steps that surface passivating treatment is conducted on the polycrystalline silicon through sulfur-containing passivating liquid or SCl2 gas, wherein the sulfur-containing passivating liquid is an ammonium sulfide solution or a sodium sulfide solution. According to the method for overcoming the surface defect of the polycrystalline silicon, due to the fact that surface passivating treatment is conducted on the polycrystalline silicon through the sulfur-containing passivating liquid or the SCl2 gas, the surface defect formed on the surface of the polycrystalline silicon in the polycrystalline silicon formation technological process can be effectively overcome, suspended chemical bonds can be effectively removed, the surface mobility of the polycrystalline silicon can be improved to a small extent, and the service life of the high mobility of the polycrystalline silicon can be prolonged. Compared with conventional hydrogen implantation and dehydrogenation technologies, the method has the advantages that operation is easier and more convenient, and the method can be accomplished only through the one-step technological process.

The invention provides an LED epitaxial wafer, an epitaxial growth method and an LED chip, the LED epitaxial wafer comprises a P-type layer, the P-type layer comprises an electron barrier layer, a transition layer and a contact layer, the transition layer comprises a first sub-layer, a second sub-layer and a third sub-layer, the second sub-layer and the third sub-layer are sequentially deposited on the first sub-layer, the first sub-layer is a P-Al1-xScxN layer, the second sub-layer is a GaN layer, and the third sub-layer is an N-Al1-yScyN layer. According to the invention, the first sub-layer and the third sub-layer respectively form a heterojunction interface with the second sub-layer, and piezoelectric polarization charge densities with opposite positive and negative polarities are generated at the heterojunction interface, so that a large number of unbalanced holes are injected into the first sub-layer, and then are injected into an active region to generate radiation recombination with electrons, thereby improving the photoelectric conversion efficiency. The situation that few holes are generated due to high acceptor activation energy of the P-type layer is relieved, and the problem that the light-emitting efficiency of the ultraviolet light-emitting diode is low is solved.

The invention discloses an LED epitaxial growth method, which sequentially comprises the steps of processing a substrate, growing a low-temperature GaN buffer layer, growing a non-doped GaN layer, growing a Si-doped N-type GaN layer, growing a multi-quantum well layer, growing an AlGaN electronic barrier layer, growing a Mg-doped P-type GaN layer, and cooling. Wherein the growth of the multi-quantum well layer sequentially comprises the steps of In-doped pretreatment, InGaN well layer growth, Ga2O3 pre-growth, Ga2O3 layer growth, annealing treatment, GaN gradient layer growth and GaN barrier layer growth. According to the method, the problems of low quantum well growth quality and low quantum well radiation recombination efficiency in the existing LED epitaxial growth method are solved, so that the luminous efficiency of the LED is improved.

The invention discloses a GaN-based light-emitting diode epitaxial wafer, a preparation method of the GaN-based light-emitting diode epitaxial wafer, and a light-emitting diode, and belongs to the technical field of epitaxy. The GaN-based light-emitting diode epitaxial wafer comprises a substrate, an AlN thin-film buffer layer, a three-dimensional nucleating layer, a two-dimensional buffer recovery layer and an epitaxial layer, wherein the AlN thin-film buffer layer, the three-dimensional nucleating layer, the two-dimensional buffer recovery layer and the epitaxial layer are sequentially stacked on the substrate; the three-dimensional nucleating layer is a GaN layer; the three-dimensional nucleating layer comprises a first nucleating sub-layer, a second nucleating sub-layer and a third nucleating sub-layer which are sequentially stacked on the AlN thin-film buffer layer; for the first nucleating sub-layer, the growth pressure of is 150-250 torr, the growth temperature is 1,000-1,100 DEG C, and the V/III ratio is 500-1,000; for the second nucleating sub-layer, the growth pressure is 500-700 torr, the growth temperature is 900-1,000 DEG C, and the V/III ratio is 100-200; and for thethird nucleating sub-layer, the growth pressure is 100-200 torr, the growth temperature is 1,100-1,150 DEG C, and the V/III ratio is 200-300. The interaction of dislocation is enhanced by growing thenucleating layer according to the three sub-layers, so that various dislocations caused by a pressure stress between the AlN thin-film buffer layer and GaN can be reduced, and the surface mobility ofAl atoms is improved.

The invention discloses an epitaxial wafer of a light emitting diode and a manufacturing method of the epitaxial wafer of the light emitting diode. The manufacturing method relates to a low-temperature buffer layer GaN, an undoped GaN layer, a Si-doped N-type GaN layer, a light emitting layer, a P-type GaN layer and a high-temperature P-type GaN layer, wherein the undoped GaN layer is located on the low-temperature buffer layer GaN, the Si-doped N-type GaN layer is located on the undoped GaN layer, the light emitting layer is located on the Si-doped N-type GaN layer, the P-type GaN layer is located on the light emitting layer, and the high-temperature P-type GaN layer is located on the P-type GaN layer. The light emitting layer comprises InGaN layers and GaN layers in a plurality of periods, and the InGaN layer in each period grows through time slicing. By means of the epitaxial wafer of the light emitting diode and the manufacturing method of the epitaxial wafer of the light emitting diode, InGaN of the light emitting layer grows in a subsection mode, the feature of the surface can be changed, the surface migration rate of In atoms is improved, and the light emitting rate of the light emitting diode is accordingly improved.

Fibrous structures having a surface pattern of a continuous knuckle region and a plurality of discrete pillow regions such that the fibrous structures exhibit improved lotion transfer compared to known fibrous structures and better sheet control during the making of such fibrous structures are provided.

The invention provides a preparation method for improving the quality of a high-electron-mobility transistor epitaxial wafer, and belongs to the technical field of semiconductor devices. The first AlN layer and the second AlN layer are sequentially grown on the substrate, the growth temperature of the second AlN layer is 100-300 DEG C higher than that of the first AlN layer, stress is released, and quality is improved. In the process of growing the second AlN layer, Ar is used as carrier gas for growth, plane movement of Al atoms is promoted, and the growth uniformity is improved. For the AlN film layer formed in the process of growing the second AlN layer, H2 treatment is carried out under the high temperature condition to reduce dislocation, the quality of the second AlN layer is improved, and the quality of the first AlN layer, the quality of the second AlN layer and the growing AlGaN buffer layer can also be improved. The quality improvement of the bottom layer structure can improve the quality of the high-electron-mobility transistor epitaxial wafer which finally grows continuously on the bottom layer structure.

The invention discloses semiconductor modified polypropylene (PP) and a preparation method thereof. The preparation method comprises the following steps: 1) drying polypropylene plastic particles; 2) adding the dried polypropylene plastic particles, POE, filler and anti-static agent HKD-151 into a mixer, and mixing for 25-30min; and 3) extruding and blending the mixture obtained in the step 2) by a twin-screw extruder at 185-220 DEG C, wherein the screw speed is 40-45rpm; and performing extrusion, staying, cooling and granulation to obtain semiconductor modified PP particles, wherein 9-11V voltage is applied to the mouth mould position of the twin-screw extruder. The invention also discloses semiconductor modified polypropylene prepared by the preparation method. In the invention, by adding a proper antistatic agent and improving the technology, the surface conductivity of the product is improved so as to reduce static generation as much as possible.

A method of forming a pre-metal dielectric film having good as deposited gapfill characteristics, as well as good mobile-ion gettering capability. The method involves first depositing a layer of high-ozone undoped silicon dioxide film having a high ozone/TEOS volume ratio. Then, a low-ozone doped BPSG film is deposited over the high-ozone undoped silicon dioxide layer. The film layers are heat treated to densify the film, and then the top layer is planarized using known planarization techniques to a thickness that allows for adequate mobile-ion gettering.