Preparation method of RB-SiC (Reaction Bonded Silicon Carbide) substrate reflector surface modification layer

Abstract

The invention provides a preparation method of an RB-SiC (Reaction Bonded Silicon Carbide) substrate reflector surface modification layer, and belongs to the technical field of thin film deposition. The method comprises the following steps: I, preparing filming conditions: mounting a Si target on a twin sputtering cathode of a filming machine, performing surface cleaning treatment on the RB-SiC substrate, fixing to a filming machine workpiece clamp, vacuuming the filming machine and roasting the RB-SiC substrate; II, performing surface treatment on the surface of the Si target of the sputtering cathode: introducing Ar gas into the sputtering cathode, and adjusting medium frequency power supply power to perform sputtering pre-treatment on the surface of the Si target; III, preparing the Si modification layer: increasing the medium frequency power supply power and Ar ventilation volume, and depositing the Si modification layer on the RB-SiC substrate by using a medium frequency magnetron sputtering technology. The preparation process is greatly simplified, the compactness of the film layer is high, the film is uniform, the polishing characteristic is obviously improved, and the optical quality of the surface of the polished substrate is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of thin film deposition, and in particular relates to a method for preparing a surface modification layer of an RB-SiC base reflector. Background technique [0002] Because SiC has excellent characteristics such as large specific stiffness, high thermal conductivity, small thermal expansion coefficient, and low density, it is an ideal mirror material for space and is widely used in various space projects. According to different preparation processes, SiC ceramics can be divided into hot press sintered SiC (HP-SiC), atmospheric pressure sintered SiC (S-SiC), reaction sintered SiC (RB-SiC) and chemical vapor deposition SiC (CVD-SiC) . Among them, HP-SiC and CVD-SiC are difficult to prepare mirror bodies with complex shapes, while the equipment required to prepare S-SiC is very expensive, the preparation process is complicated, and the sintering shrinkage rate reaches 10% to 15%, which is not suitable for larg...

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Problems solved by technology

[0005] In order to solve the defect that it is difficult to grow a uniform and dense Si modified layer on a large-diameter RB-SiC substrate material in the prior art, a method for preparing a surface modified layer of an RB-SiC substrate mirror is provided.

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