LED epitaxial wafer, epitaxial growth method and LED chip

An LED epitaxial wafer and epitaxial growth technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous efficiency of ultraviolet light-emitting diodes, and achieve the effects of enhancing surface mobility, reducing trapping, and avoiding a large number of defects

Active Publication Date: 2022-03-29
JIANGXI ZHAO CHI SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Based on this, the object of the present invention is to provide an LED epitaxial wafer, an epitaxial growth method and an LED chip, aiming at solving the problem of low luminous efficiency of existing ultraviolet light emitting diodes

Method used

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  • LED epitaxial wafer, epitaxial growth method and LED chip
  • LED epitaxial wafer, epitaxial growth method and LED chip
  • LED epitaxial wafer, epitaxial growth method and LED chip

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Experimental program
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Embodiment 1

[0031] see figure 1 and figure 2 , shows the LED epitaxial wafer in Embodiment 1 of the present invention, including a sapphire substrate 1, an AlN buffer layer 2 epitaxially grown on the sapphire substrate 1, a three-dimensional island-shaped AlN growth layer 3, and a two-dimensional recovery AlN growth layer. layer 4, n-type AlGaN layer 5, multiple quantum well layer 6 and p-type layer 7.

[0032] In this embodiment, the P-type layer 7 is a structure formed by sequentially growing an electron blocking layer 71, a transition layer 72, and a contact layer 73, wherein the transition layer 72 is formed by sequentially growing the first sublayer 721 on the electron blocking layer 71. , the second sublayer 722 and the third sublayer 723, it should be noted that the first sublayer 721 is P-Al 1-x sc x N layer, the second sublayer 722 is a GaN layer, and the third sublayer 723 is N-Al 1-y scy N layer, since the growth process of the epitaxial layer generally grows gradually fro...

Embodiment 2

[0036] see image 3 , shows an epitaxial growth method for LED epitaxial wafers proposed in Embodiment 2 of the present invention, which is used to prepare the LED epitaxial wafers in Embodiment 1 above. The method specifically includes steps S201 to S207, wherein:

[0037] Step S201, providing a sapphire substrate required for growth.

[0038] In this embodiment, the substrate is a patterned sapphire substrate, which has the advantages of mature technology and low cost. It is an example and not limiting. In some preferred embodiments of this embodiment, the substrate can also be a Si substrate or SiC substrate.

[0039] In addition, before the growth process, the surface of the substrate needs to be cleaned to avoid impurities from being mixed into the epitaxial wafer, which is conducive to improving the growth quality of the epitaxial wafer. The specific process of cleaning is to introduce the substrate into the MOCVD reaction chamber, Anneal in a hydrogen atmosphere for 1...

Embodiment 3

[0065] Embodiment 3 of the present invention provides an LED chip, including the LED epitaxial wafer in the first embodiment above, and the LED epitaxial wafer can be epitaxially grown by the epitaxial growth method of the LED epitaxial wafer in the second embodiment above.

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Abstract

The invention provides an LED epitaxial wafer, an epitaxial growth method and an LED chip, the LED epitaxial wafer comprises a P-type layer, the P-type layer comprises an electron barrier layer, a transition layer and a contact layer, the transition layer comprises a first sub-layer, a second sub-layer and a third sub-layer, the second sub-layer and the third sub-layer are sequentially deposited on the first sub-layer, the first sub-layer is a P-Al1-xScxN layer, the second sub-layer is a GaN layer, and the third sub-layer is an N-Al1-yScyN layer. According to the invention, the first sub-layer and the third sub-layer respectively form a heterojunction interface with the second sub-layer, and piezoelectric polarization charge densities with opposite positive and negative polarities are generated at the heterojunction interface, so that a large number of unbalanced holes are injected into the first sub-layer, and then are injected into an active region to generate radiation recombination with electrons, thereby improving the photoelectric conversion efficiency. The situation that few holes are generated due to high acceptor activation energy of the P-type layer is relieved, and the problem that the light-emitting efficiency of the ultraviolet light-emitting diode is low is solved.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to an LED epitaxial wafer, an epitaxial growth method and an LED chip. Background technique [0002] Light Emitting Diode (LED for short) is a semiconductor electronic component that can emit light. Due to its small size, high brightness, and low energy consumption, it has attracted the attention of more and more researchers. Among them, ultraviolet LED The light source has the advantages of high efficiency and energy saving, small size, safety and durability, mercury-free environmental protection, low working voltage and low power consumption, and is currently widely used in the disinfection of drinking water, disinfection of medical equipment and household appliances, wastewater treatment, plant lighting and other fields. [0003] At present, the ultraviolet LED epitaxial wafer usually includes a substrate and an AlN buffer layer on the substrate, a three-dimensional island-shaped Al...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/02H01L33/00
CPCH01L33/14H01L33/025H01L33/007
Inventor 胡加辉刘春杨吕蒙普金从龙顾伟
Owner JIANGXI ZHAO CHI SEMICON CO LTD
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