LED wafer and its preparation method and LED lamp

Abstract

The invention provides an LED wafer and a preparation method thereof and an LED lamp. The preparation method comprises the following steps: 1) growing an AlN composite substrate on a sapphire substrate; 2) growing a layer of Al0.5Ga0.5N quantum structure active layer on the AlN composite substrate; 3) epitaxially growing a layer of thin AlN buffer layer on the Al0.5Ga0.5N quantum structure activelayer to serve as a hole blocking layer; 4) growing multiple layers of quantum well structures on the AlN buffer layer; 5) growing a P-type electron barrier layer on the quantum well structures; 6) growing Mg-Si[delta] co-doped superlattices on the P-type electron barrier layer; and 7) growing a layer of P<+>-GaN ohmic electrode cover layer on the Mg-Si[delta] co-doped superlattices. The beneficial effects are that, according to the preparation method of the LED wafer comprising a high-Al-component AlGaN epitaxial substrate, by growing the AlN composite substrate on the sapphire substrate, stress in the growth process is released effectively, and the high-quality AlGaN epitaxial substrate can be obtained.

Description

technical field [0001] The invention relates to an LED wafer, a preparation method thereof and an LED lamp. Background technique [0002] In the traditional LED crystal element preparation process, although the preparation of deep ultraviolet LED crystal element materials can be realized by adjusting the Al composition in the AlGaN material of the light-emitting layer, with the gradual increase of the Al composition in the AlGaN material, the AlGaN The difficulty from the epitaxial growth of the material to the fabrication of the device also increases. The specific manifestations are: with the increase of the Al composition, it is difficult to effectively control the two-dimensional growth during the epitaxial growth process, which easily leads to high defect density and uneven surface of the film. Polarity mixing and many other issues. [0003] In fact, the preparation of AlGaN epitaxial substrates with high Al composition is a key link in the production of deep ultraviole...

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Problems solved by technology

[0002] In the traditional LED crystal element preparation process, although the preparation of deep ultraviolet LED crystal element materials can be realized by adjusting the Al composition in the AlGaN material of the light-emitting layer, with the gradual increase of the Al composition in the AlGaN material, the AlGaN The difficulty from the epitaxial growth of the material to the fabrication of the device also increases. The specific manifestations are: with the increase of the Al composition, it is difficult to effectively control the two-dimensional growth during the epitaxial growth process, which easily leads to high defect density and uneven surface of the film. Polarity mixing and many other issues

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