Semiconductor modified polypropylene and preparation method thereof

A semiconductor and polypropylene technology, which is applied in the field of semiconductor modified polypropylene and its preparation, can solve the problems of circuit boards and electronic components, excessive PM2. , good electrical conductivity, the effect of improving surface mobility

Inactive Publication Date: 2016-10-12
JIANGSU ZHAOJUN NEW MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Polypropylene (PP) has a wide range of applications, especially in the field of automobile industrialization. However, due to the high insulation of polypropylene, it is easy to accumulate static electricity during production, transportation and use, which will damage the circuit boards and electronic components in the car. The device is harmful; and it is easy to absorb a large amount of dust during use, causing the PM2.5 in the car to exceed the standard

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0031] General method for preparing semiconducting modified polypropylene, including:

[0032] 1) Drying the PP plastic particles, the drying method is as follows: treat the PP plastic particles at 80°C for 2 hours;

[0033] 2) Add the dried PP plastic particles, POE, filler talc powder and antistatic agent HKD-151 into the high-speed mixer, and mix at high speed for a period of time;

[0034] 3) The mixture prepared in step 2) is extruded and blended by a twin-screw extruder at 185-220°C, the die position is loaded with a voltage of 10v, and the screw speed is 45rpm / min. After extrusion, stretching, cooling, Granulating to obtain semiconductor modified PP particles.

Embodiment 1

[0036] By adjusting the high-speed mixing time, the influence of the dispersion effect of the antistatic agent on the resistivity was observed. The steps are:

[0037] 1) Dry the PP plastic particles (80°C, 2h);

[0038] 2) Add PP plastic particles, POE, talcum powder and new antistatic agent HKD-151 into a high-speed (mixing speed: 300 rpm) mixer, and mix at high speed for 25min, 26min, 27min, 28min, 29min, and 30min respectively;

[0039] 3) The mixture prepared in step 2) is extruded and blended by a twin-screw extruder at 185-220°C, no voltage is applied to the die position, and the screw speed is 45rpm, after extrusion, stretching, cooling, and granulation , to obtain semiconductor modified PP particles;

[0040] 4) Homogenize the obtained semiconductor-modified PP particle samples in the homogenization bin for 30 minutes, then dry them at 120°C for 12 hours, and then injection mold them into standard test discs. The injection molding temperature is 215°C and the inject...

Embodiment 2

[0048] The die position of the twin-screw extruder is compared with a voltage of 10v and no voltage. The experimental steps are as follows:

[0049] 1) Dry the PP plastic particles (80°C, 2h);

[0050] 2) Add PP plastic particles, POE, talcum powder and new antistatic agent HKD-151 into a high-speed (mixing speed of 300 rpm) mixer, and mix at high speed for 28 minutes;

[0051] 3) The mixture prepared in step 2) is extruded and blended by a twin-screw extruder at 185-220°C, the die position is loaded with a voltage of 10v or no voltage is applied, and the screw speed is 45rpm. Cooling and granulation to obtain semiconductor modified PP particles;

[0052] 4) Homogenize the obtained semiconductor-modified PP particle samples in the homogenization bin for 30 minutes, then dry them at 120°C for 12 hours, and then injection mold them into standard test discs. The injection molding temperature is 215°C and the injection pressure is 30Mpa; After the sample is tested, its surface r...

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PUM

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Abstract

The invention discloses semiconductor modified polypropylene (PP) and a preparation method thereof. The preparation method comprises the following steps: 1) drying polypropylene plastic particles; 2) adding the dried polypropylene plastic particles, POE, filler and anti-static agent HKD-151 into a mixer, and mixing for 25-30min; and 3) extruding and blending the mixture obtained in the step 2) by a twin-screw extruder at 185-220 DEG C, wherein the screw speed is 40-45rpm; and performing extrusion, staying, cooling and granulation to obtain semiconductor modified PP particles, wherein 9-11V voltage is applied to the mouth mould position of the twin-screw extruder. The invention also discloses semiconductor modified polypropylene prepared by the preparation method. In the invention, by adding a proper antistatic agent and improving the technology, the surface conductivity of the product is improved so as to reduce static generation as much as possible.

Description

technical field [0001] The invention belongs to the field of chemical industry, in particular to a semiconductor modified polypropylene and a preparation method thereof. Background technique [0002] Polypropylene (PP) has a wide range of applications, especially in the field of automobile industrialization. However, due to the high insulation of polypropylene, it is easy to accumulate static electricity during production, transportation and use, which will damage the circuit boards and electronic components in the car. The device is harmful; and it is easy to absorb a large amount of dust during use, causing the PM2.5 in the car to exceed the standard. [0003] Therefore, it is necessary to improve it and improve its antistatic performance. Contents of the invention [0004] In order to improve the conductivity of modified PP plastic particles, the purpose of the present invention is to provide a method for preparing semiconducting modified polypropylene. By adding a sui...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L23/12C08L23/08C08K3/34B29C47/92B29C48/92
CPCB29C48/92B29C2948/92542B29C2948/92704C08K2201/001C08K2201/017C08L23/12C08L2201/04C08L2203/20C08L23/0815C08K3/34
Inventor 鲁平才赵钎戚全辉
Owner JIANGSU ZHAOJUN NEW MATERIAL CO LTD
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