Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Deposition film preparation method and film plating machine

A coating machine and sputtering deposition technology, which is applied in the field of metal film preparation, can solve problems such as the difficulty in preparing high-thickness and high-density metal films, and achieve the effects of enhancing surface mobility, uniform grains, and reducing porosity

Inactive Publication Date: 2019-12-06
李紫茵
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention solves the existing technical problem of difficulty in preparing a metal film with both high thickness and high density in the existing metal film preparation scheme by providing a method for depositing and preparing a film and a coating machine

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Deposition film preparation method and film plating machine
  • Deposition film preparation method and film plating machine
  • Deposition film preparation method and film plating machine

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045]In this embodiment, a method for depositing and preparing a film is provided, such as figure 1 As shown, the method includes:

[0046] Step S101, preparing a substrate;

[0047] Step S102, using a sputtering ion source to sputter deposit a metal film on the surface of the substrate, wherein, in the process of using a sputtering ion source to sputter deposit a metal film on the surface of the substrate, using an auxiliary ion source to bombard the metal film , so as to enhance the surface mobility of the metal film atoms and improve the compactness of the metal film.

[0048] In the embodiment of the present application, the metal film may be an aluminum film, a copper film, a silver film or a titanium film, which is not limited here and will not be listed one by one.

[0049] Preferably, the metal film is an aluminum film, because the aluminum film has flat and high reflectivity from the ultraviolet region to the infrared region, and there is a layer of transparent Al ...

Embodiment 2

[0093] In this example, if Figure 7 As shown, a coating machine is provided, including:

[0094] target stage 701;

[0095] Workbench 702, the workbench can fix the substrate;

[0096] The sputtering ion source 703 is used to bombard the target stage, and deposit a metal film on the surface of the substrate through sputtering of the target stage;

[0097] The auxiliary ion source 704 is used for bombarding the metal film during sputtering deposition of the metal film by the sputtering ion source, so as to enhance the surface mobility of atoms of the metal film and improve the compactness of the metal film.

[0098] Such as Figure 7 As shown, the workbench 702 corresponds to the position above the target stage 701. In the specific implementation process, the substrate can be fixed below the workbench, so that the target atoms on the target stage 701 are sputtered by the ion source 704 Under the bombardment, it can be sputtered onto the substrate. same as Figure 7 As sh...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
densityaaaaaaaaaa
densityaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a deposition film preparation method and a film plating machine. The method includes the following steps: preparing a basal body; and during sputtering deposition of a metal film on the surface of the basal body through adopting a sputtering ion source, adopting an auxiliary ion source to bombard the metal film to enhance the surface migration rate of atoms of the metal film and improve the compactness of the metal film. According to the method and the film plating machine, provided by the invention, the technical problem that in the existing metal film preparation scheme, a metal film with high thickness and high compactness can not be prepared is solved, and the method for generating the metal film with high thickness and high compactness and the film plating machine are provided.

Description

technical field [0001] The invention relates to the technical field of metal film preparation, in particular to a method for depositing and preparing a film and a coating machine. Background technique [0002] Metal films are widely used in semiconductor devices and optical devices, and their main uses are to change the path of light or receive light signals, such as transmitting telescopes, high-efficiency light-emitting diodes, or space satellite reflectors. [0003] At present, the main preparation methods of metal films are: electron gun evaporation technology and ion beam sputtering coating technology. Among them, what the traditional electron gun evaporation technology obtains is a thin film with columnar microstructure, and its packing density is about 0.7 at room temperature. , The pores of the columnar structure in the film will absorb water vapor in the atmosphere, thereby changing the original refractive index and optical thickness and affecting the stability of t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/46C23C14/02C23C14/14
CPCC23C14/022C23C14/14C23C14/3442C23C14/46
Inventor 李紫茵
Owner 李紫茵
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com