Epitaxial wafer of light emitting diode and manufacturing method thereof

A technology of light-emitting diodes and manufacturing methods, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problem that the light-emitting layer cannot meet the needs of users' light efficiency, and achieves improvement of surface mobility, surface mobility improvement, and optical change. quality effect
CN104269475BActive Publication Date: 2017-02-08XIANGNENG HUALEI OPTOELECTRONICS
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
XIANGNENG HUALEI OPTOELECTRONICS
Publication Date
2017-02-08

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Abstract

The invention discloses an epitaxial wafer of a light emitting diode and a manufacturing method of the epitaxial wafer of the light emitting diode. The manufacturing method relates to a low-temperature buffer layer GaN, an undoped GaN layer, a Si-doped N-type GaN layer, a light emitting layer, a P-type GaN layer and a high-temperature P-type GaN layer, wherein the undoped GaN layer is located on the low-temperature buffer layer GaN, the Si-doped N-type GaN layer is located on the undoped GaN layer, the light emitting layer is located on the Si-doped N-type GaN layer, the P-type GaN layer is located on the light emitting layer, and the high-temperature P-type GaN layer is located on the P-type GaN layer. The light emitting layer comprises InGaN layers and GaN layers in a plurality of periods, and the InGaN layer in each period grows through time slicing. By means of the epitaxial wafer of the light emitting diode and the manufacturing method of the epitaxial wafer of the light emitting diode, InGaN of the light emitting layer grows in a subsection mode, the feature of the surface can be changed, the surface migration rate of In atoms is improved, and the light emitting rate of the light emitting diode is accordingly improved.
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Description

technical field

[0001] The present application relates to the manufacturing technology of light-emitting diode chips, and more specifically, relates to an epitaxial wafer of light-emitting diodes and a manufacturing method thereof. Background technique

[0002] A light-emitting diode (Light-Emitting Diode, referred to as LED) is a semiconductor electronic device that converts electrical energy into light energy. When electric current flows, electrons and holes recombine in it to emit monochromatic light. As a new type of high-efficiency, environmentally friendly and green solid-state lighting source, LED has the advantages of low voltage, low power consumption, small size, light weight, long life, high reliability, etc., and is being rapidly and widely used. Such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlight, outdoor full-color display screens, etc. Especially in the field of lighting, high-power chips are the trend o...

Claims

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