LED epitaxial growth method

An epitaxial growth and reaction cavity technology, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of low quantum well radiation recombination efficiency and low quantum well growth quality.
CN112687770APending Publication Date: 2021-04-20XIANGNENG HUALEI OPTOELECTRONICS
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
XIANGNENG HUALEI OPTOELECTRONICS
Publication Date
2021-04-20

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Abstract

The invention discloses an LED epitaxial growth method, which sequentially comprises the steps of processing a substrate, growing a low-temperature GaN buffer layer, growing a non-doped GaN layer, growing a Si-doped N-type GaN layer, growing a multi-quantum well layer, growing an AlGaN electronic barrier layer, growing a Mg-doped P-type GaN layer, and cooling. Wherein the growth of the multi-quantum well layer sequentially comprises the steps of In-doped pretreatment, InGaN well layer growth, Ga2O3 pre-growth, Ga2O3 layer growth, annealing treatment, GaN gradient layer growth and GaN barrier layer growth. According to the method, the problems of low quantum well growth quality and low quantum well radiation recombination efficiency in the existing LED epitaxial growth method are solved, so that the luminous efficiency of the LED is improved.
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Description

Technical field

[0001] The present invention belongs to the field of LED technology, and more particularly to an LED epitaxial growth method.Background technique

[0002] Light-Emitting Diode, LEDs are semiconductor electronic devices that convert electrical energy into light energy. When the LED is currently flowing, the electrons in the LEDs are monochromatic light from the holes in their multi-quantum wells. As an efficient, environmentally friendly, green new solid-state illumination source, LED source has the advantages of low voltage, low energy, small size, light weight, long life, high reliability and colorful color. At present, the size of the domestic production LED is gradually expanding, but the LED still has low luminous efficiency, affecting the energy saving effect of the LED.

[0003] At present, the LED epitaxial inGan / GaN multi-quantum well quality prepared by the growth method of the existing LED multi-quantum well is low, and the radiation efficiency of the multi-quantum...

Claims

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