Method for improving Schottky barrier of gallium nitride-based field effect transistor

Abstract

The invention discloses a method for improving a Schottky barrier of a gallium nitride-based field effect transistor, belonging to the technical field of manufacture of semiconductor material device. The method comprises the following steps: cleaning the gallium nitride-based field effect transistor; and storing the cleaned gallium nitride-based field effect transistor under the protection of nitrogen at high temperature. By means of the invention, the height of the Schottky barrier of gallium nitride-based field effect transistor is increased, the reverse leakage f the Schottky barrier of gallium nitride-based field effect transistor is reduced, and the power characteristic and the breakdown characteristic of the gallium nitride-based field effect transistor are improved; therefore, the problem of parameter drift of the gallium nitride-based field effect transistor in the work is solved, and the stability and reliability of the gallium nitride-based field effect transistor are improved.

Description

Technical field [0001] The invention belongs to the field of semiconductor material device manufacturing, and particularly relates to a method for improving the Schottky barrier of a gallium nitride-based field effect transistor. Background technique [0002] In the structure of semiconductor field effect transistors, GaN-based field-effect transistors rely on the gate Schottky barrier to control the channel region. Therefore, the reliability and stability of GaN-based field-effect transistors largely depend on Schottky The reliability and stability of the base gate. The gate leakage current is the main source of low-frequency noise, and the gate reverse breakdown voltage determines the operating voltage and power capacity of the GaN-based field effect transistor. High-quality Schottky contacts are conducive to obtaining high-performance GaN-based field effect transistors. However, the existing GaN-based field effect transistors have the problems of large Schottky reverse leaka...

AI Technical Summary

Problems solved by technology

However, the existing gallium nitride-based field effect transistors have the problems of large Schottky reverse leakage, and the power performance and breakdown characteristics of the gallium nitride-based field effect transistors are not high.

In addition, GaN-based field-effect transistors have the problem of parameter drift during operation, which leads to poor stability and reliability of GaN-based field-effect transistors

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