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GaN-based LED epitaxial wafer and preparation method therefor

An LED epitaxial wafer, N-type technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as restricting development, limiting high-power, high-brightness LEDs, LED luminous efficiency attenuation, etc., to improve the probability of radiation recombination, Increased optical output power, the effect of increased optical output power

Inactive Publication Date: 2016-03-23
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, LEDs have the problem of attenuation of luminous efficiency under high current injection, which limits the development of high-power and high-brightness LEDs to a certain extent, and also restricts the development of LEDs in the field of general lighting.

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  • GaN-based LED epitaxial wafer and preparation method therefor

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Embodiment Construction

[0013] The technical solutions in the embodiments of the present invention are clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0014] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0015] Such as figure ...

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Abstract

The invention discloses a GaN-based LED epitaxial wafer and a preparation method therefor, and relates to the technical fields of a device characterized by a semiconductor and a preparation method for the device. The epitaxial wafer comprises a four-inch silicon substrate; and an AlN / AlGaN buffer layer, an unintentional doped U type GaN layer, a silicon doped N type GaN layer, an InGaN / GaN multiple quantum well luminous layer, a low temperature P type GaN layer, a P type superlattice AlInGaN / InGaN electronic barrier layer and a high temperature P type GaN layer are arranged on the upper surface of the four-inch silicon substrate from the bottom up in sequence. The epitaxial wafer improves the light output power of the LED under high electric current density injection; compared with the conventional P-AlGaN potential barrier structured epitaxial wafer, the light output power is improved by approximate 5-10% by the GaN-based LED epitaxial wafer provided by the invention; and meanwhile, the anti-static capability of the LED chip is improved by approximate 3-6%.

Description

technical field [0001] The invention relates to the technical field of devices characterized by semiconductors and a preparation method thereof, in particular to a GaN-based LED epitaxial wafer and a preparation method thereof. Background technique [0002] LED is a solid-state semiconductor device that directly converts electrical energy into light energy. Compared with traditional light sources, LED has the characteristics of small size, long service life, fast response speed, and high luminous efficiency. Therefore, LED has become a new type of high-profile Green light sources have entered the field of lighting. However, LEDs have the problem of attenuation of luminous efficiency under high current injection, which limits the development of high-power and high-brightness LEDs to a certain extent, and also restricts the development of LEDs in the field of general lighting. Contents of the invention [0003] The technical problem to be solved by the present invention is ...

Claims

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Application Information

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IPC IPC(8): H01L33/04H01L33/06H01L33/14H01L33/32H01L33/00
CPCH01L33/04H01L33/0066H01L33/0075H01L33/06H01L33/145H01L33/32
Inventor 刘波尹甲运白欣娇袁凤坡王波潘鹏汪灵周晓龙王静辉
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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