Gate-ballast structure RF AlGaN/GaN HEMTs device and preparation method thereof

Abstract

The invention belongs to the technical field of a semiconductor and relates to a gate-ballast structure RF AlGaN / GaN HEMTs device and a preparation method thereof. The device includes a AlGaN / GaN substrate on SiC, a gate, a source and a drain, wherein the gate is a doped polysilicon, and square resistance is in a range of 20-40omega / sq. The doped polysilicon is taken as a gate, barrier potential height is high, a gate leakage is smaller compared with a conventional Ni / Au schottky gate, power consumption of a radio frequency power device is reduced, efficiency is improved, and the doped polysilicon has relatively low Rg and has the ballast resistor function. The device can be applied to a multi-finger gate device AlGaN / GaN HEMTs, through adjusting Lg length, the purpose of optimizing Wg length is achieved, heat radiation of the device is effectively improved, the device can be further applied to AlGaN / GaN HEMTs, and the polysilicon gate can be biased by wider Vgs swing.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a radio frequency AlGaN / GaN HEMTs device with gate ballast structure and a preparation method thereof. Background technique [0002] GaN third-generation semiconductors have a wide band gap (3.4eV), high breakdown field strength (3MV / cm), and high electron mobility (1500cm 2 / (V s)), extremely high peak electron velocity (3×10 7 cm / s) and high two-dimensional electron gas concentration (2×10 13 cm 2 ), AlGaN / GaN HEMTs power devices are gradually replacing RF-LDMOS and GaAs power devices, and have become the preferred microwave power devices for T / R components in phased array radars. On the other hand, with the urgent demand for massive data broadband transmission in 5G communication, AlGaN / GaN HEMTs devices that work in high frequency bands and have the advantage of high power density will show their talents in civil wireless communication again, but the for...

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Problems solved by technology

On the other hand, with the urgent demand for massive data broadband transmission in 5G communication, AlGaN / GaN HEMTs devices that work in high frequency bands and have the advantage of high power density will show their talents in civil wireless communication again, but the former will not be used in 5G communication applications. China also faces difficulties such as high-linear transmission of high-frequency modulation signals and needs to break through

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