Laminated thin film solar battery and preparation method thereof

A solar cell and thin film technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as inability to adjust current flow and light transmittance, long-term battery stability risks, poor transmittance, etc. Facilitate optical transmission and resistivity, wide application range, and large absorption range

Active Publication Date: 2016-07-06
紫石能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the mechanical lamination method can realize solar materials with different band gaps to absorb light in different bands, it has great limitations. For example, the adhesive material will inevitably absorb part of the sunlight, resulting in a certain optical loss. The method also poses some risks to the long-term stability of the entire battery
The sealant used in CN101097968A is used as the connection between the top layer and the bottom battery, the transmittance will be relatively poor, and the service life will be relatively low
The problem that the nano-metal film cannot adjust the current passing and light transmittance well

Method used

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  • Laminated thin film solar battery and preparation method thereof
  • Laminated thin film solar battery and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] [101] Form the back electrode 3 on the substrate 1 by magnetron sputtering method, and its preparation thickness is 500nm;

[0044] [102] Form the p-type semiconductor layer 41 of the bottom cell 4 on the back electrode 3 by magnetron sputtering or co-evaporation, that is, P-type Cu(In, Ga)Se 2 A semiconductor layer with a thickness of 500nm and a doping concentration of 1x10 17 cm -3 , with a band gap of 1.0eV, using Cu, In, Ga alloy targets, forming p-type Cu(In,Ga)Se at a pressure of 0.1Pa and a Se atmosphere 2 Absorption layer of semiconductor material, in which Cu / (In+Ga):Ga / (In+Ga) of the alloy target has a gradient change, which can be optimized according to the process performance.

[0045] [103] On the p-type semiconductor layer 41 of the bottom cell 4, form the n-type semiconductor layer 42 of the bottom cell 4 by magnetron sputtering or a chemical water bath, that is, the n-type CdS buffer layer, using a CdS target at a pressure of 0.1 Pa, Ar, O 2 , H 2 ...

Embodiment 2

[0051] [201] On a metal foil substrate 1 with a thickness of 50 μm, a metal titanium barrier layer 2 with a thickness of 500 nm was prepared by magnetron sputtering using a metal titanium target at a gas pressure of 10 Pa and argon as a process gas.

[0052] [202] On the metal titanium barrier layer 2, molybdenum target with a thickness of 700nm was prepared as the back electrode 3 by using a molybdenum target at a gas pressure of 10Pa and argon as the process gas by magnetron sputtering.

[0053] [203] On the back electrode 3, by means of magnetron sputtering, Cu, In, Ga alloy targets are used to form p-type Cu(In, Ga)Se at a pressure of 10Pa and a Se atmosphere. 2 semiconductor layer. The Cu / (In+Ga):Ga / (In+Ga) of the alloy target has a gradient change, which can be optimized according to the process performance. Cu(In,Ga)Se 2 The thickness of semiconductor material is 2000nm. The doping concentration is 1x10 17 cm -3 , with a bandgap of 1.2eV.

[0054] [204] On the p-t...

Embodiment 3

[0061] [301] On a stainless steel substrate 1 with a thickness of 40 μm, a metal titanium barrier layer 2 with a thickness of 400 nm was prepared by magnetron sputtering using a metal titanium target at a pressure of 5 Pa and the process gas being argon.

[0062] [302] On the metal titanium barrier layer 2, molybdenum target with a thickness of 600nm was prepared as the back electrode 3 by magnetron sputtering at a gas pressure of 5Pa and argon gas as the process gas.

[0063] [303] On the back electrode 3, by means of magnetron sputtering, Cu, In, Ga alloy targets are used to form p-type Cu(In, Ga)Se at a pressure of 6Pa and a Se atmosphere. 2 semiconductor layer. The Cu / (In+Ga):Ga / (In+Ga) of the alloy target changes in a gradient. The Cu(In,Ga)Se2 semiconductor material has a thickness of 1000nm and a doping concentration of 1x10 17 cm -3 , with a bandgap of 1.1eV.

[0064] [304] On the p-type semiconductor layer 41 of the bottom cell 4, a CdS target is used, at a pressu...

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Abstract

The invention relates to a laminated thin film solar battery. The laminated thin film solar battery includes a substrate as well as a back electrode, a bottom cell, a top cell and a window layer which are arranged on the substrate sequentially; a tunnel junction is arranged between the bottom cell and the top cell; the tunnel junction includes an n+ type semiconductor layer and a p+ type semiconductor layer; the n+ type semiconductor layer contacts with an n type semiconductor layer of the bottom cell; and the p+ type semiconductor layer contacts with a p type semiconductor layer of the top cell. The invention also provides the preparation method of the above structure. According to the laminated thin film solar battery and the preparation method thereof of the invention, the bottom cell and the top cell are connected with each other through the tunnel junction, so that electric conduction connection between the two cells can be realized, and the adjustment of optical transmittance and electrical resistivity can be facilitated compared with a mechanical lamination mode; the appropriate tunnel junction is adopted to achieve continuous growth of the laminated layers, and therefore, compared with the mechanical lamination method, process steps can be reduced, the reliability of the battery can be improved, the overall efficiency of the battery can be improved, and carrier interface recombination can be weakened.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cells, in particular to a laminated thin-film solar cell and a preparation method thereof. Background technique [0002] In order to broaden the absorption range of solar cell materials, stacked structures of solar materials with different band gaps are often used. The solar spectrum can be regarded as several segments, using narrow-bandgap materials for long-wavelength absorption and wide-bandgap materials for short-wavelength absorption can greatly improve performance and stability. [0003] For thin-film cells, the continuous growth stack structure is mainly used in silicon-based and III-V compound solar cells. Among them, the world record of silicon-based tandem solar cells is held by LG, the basic structure is a-Si:H / nc-Si:H / nc-Si:H, and a photoelectric conversion efficiency of 13.4% has been achieved; III-V group The world record for compound stacked cells is Sharp's InGaP / GaAs / InG...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/046H01L31/0725H01L31/0749H01L31/18
CPCY02E10/541Y02P70/50
Inventor 彭东阳
Owner 紫石能源有限公司
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