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Thin film solar cell absorption layer forming method, thin film solar cell and preparation method

A thin-film solar cell and absorption layer technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of reducing the crystal quality of the absorption layer and affecting the conversion efficiency of the device, so as to improve the photoelectric conversion efficiency and improve the carrier collection efficiency. , the effect of interface recombination reduction

Active Publication Date: 2021-01-08
NANKAI UNIV
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  • Claims
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Problems solved by technology

However, low temperature will reduce the crystalline quality of the absorber layer and thus affect the device conversion efficiency

Method used

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  • Thin film solar cell absorption layer forming method, thin film solar cell and preparation method
  • Thin film solar cell absorption layer forming method, thin film solar cell and preparation method
  • Thin film solar cell absorption layer forming method, thin film solar cell and preparation method

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[0029] The method for preparing the thin film solar cell of the present invention will be described in detail below through a specific example. like figure 1 Shown, the preparation method of thin film solar cell of the present invention comprises the following steps:

[0030] In the bottom electrode forming step S1 , a Mo metal electrode is prepared on the substrate 100 as the bottom electrode 101 , optionally with a thickness of 1˜5 μm. Wherein, the substrate may also be a flexible substrate or a rigid substrate such as soda-lime glass, sodium-free glass, or quartz glass. The method for preparing the metallic Mo electrode may be magnetron sputtering or evaporation, but is not limited thereto.

[0031] In the absorption layer formation step S2 having surface inversion properties, first, Cu is spin-coated on the bottom electrode 101 2 ZnSnS 4 The precursor solution is then heated and dried on a hot plate at 100-500° C. for 30-300 seconds to promote volatilization of organic...

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Abstract

The invention discloses a thin film solar cell absorption layer forming method, a thin film solar cell and a preparation method. The thin film solar cell absorption layer forming method comprises thefollowing steps of: sequentially forming a first precursor film, an Al2O3 layer and a second precursor film on a bottom electrode to form a precursor film laminatation layer; and carrying out high-temperature selenylation or vulcanization treatment on the precursor film lamination layer to form an absorption layer, wherein the surface of the absorption layer has the characteristic of a semiconductor type opposite to that in the body of the absorption layer, the first precursor film and the second precursor film are I-II-IV-VI group compound semiconductors, the first precursor film at least comprises a Cu element, and the second precursor film at least contains Ag element. According to the invention, an open-circuit voltage (VOC) is increased, so that the corresponding open-circuit voltagedeficit (VOC,def) is as low as 0.327 V, the carrier transmission is optimized, the carrier collection efficiency is improved, the interface recombination of the absorption layer / buffer layer is reduced, and the photoelectric conversion efficiency of the thin film solar cell is remarkably improved.

Description

technical field [0001] The invention relates to the field of thin-film solar cells, in particular to a method for forming an absorbing layer of a thin-film solar cell, a thin-film solar cell and a preparation method. Background technique [0002] In recent years, thin-film solar cells have gradually become a research hotspot for new solar cells. Because its optical band gap matches the optimal optical band gap value of single-junction solar cells, it has a large light absorption coefficient, rich constituent elements, environmental friendliness, non-toxicity, and low cost. [0003] Various types of thin film solar cells have been developed, and a typical example thereof is a group I-II-IV-VI compound semiconductor solar cell. Although its solar cell conversion efficiency is low, it is considered to be a promising alternative to copper indium gallium selenide (CuInGaSe) x Ga 1-x Se 2 , referred to as CIGSe) is a photovoltaic material. Therefore, researchers began to lear...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18H01L31/0445
CPCH01L31/02167H01L31/1876H01L31/0445Y02E10/50Y02P70/50Y02E10/541
Inventor 张毅孙亚利郭洪玲孟汝涛刘越
Owner NANKAI UNIV
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