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QLED (quantum dot light-emitting diode) device and preparation method thereof

A device and hole transport layer technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of harsh vacuum conditions, complex equipment, and methods that are difficult to popularize and apply, and achieve the benefits of transport, transport and recombination, and high stability. The effect of efficiency and stability

Active Publication Date: 2017-05-31
TCL CORPORATION
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Problems solved by technology

[0004] The purpose of the present invention is to provide a QLED device and its preparation method, aiming to solve the problem of preparing inorganic QLED devices by electrospray and molecular beam epitaxy in the process of preparing QLED devices with the same HTL, ETL and QD shells with the same composition compounds in the prior art. When layering, complex equipment and harsh vacuum conditions are required, which makes it difficult to popularize and apply the method

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  • QLED (quantum dot light-emitting diode) device and preparation method thereof
  • QLED (quantum dot light-emitting diode) device and preparation method thereof
  • QLED (quantum dot light-emitting diode) device and preparation method thereof

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Embodiment Construction

[0024] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0025] to combine Figure 1-3 , the embodiment of the present invention provides a QLED device, comprising an anode 2, a hole transport layer 4, a quantum dot light-emitting layer 5, an electron transport layer 6 and a cathode 7 which are sequentially stacked, and the quantum dot light-emitting layer 5 is a core-shell Quantum dots, and its shell is ZnS;

[0026] The hole transport layer 4 and the electron transport layer 6 are made of the same compound as the shell material of the core-shell quantum dots, wherein the electron transport layer 6 is made of N-type ZnS, and the hole The hole ...

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Abstract

The invention provides a QLED (quantum dot light-emitting diode) device. The QLED device comprises an anode, a hole transport layer, a quantum dot light emitting layer, an electron transfer layer and a cathode which are stacked sequentially, wherein the quantum dot light emitting layer adopts core-shell quantum dots with ZnS as the shell layer; the hole transport layer and the electron transfer layer are made of a compound the same as the shell layer material of the core-shell quantum dots; the electron transport layer is made of N-type ZnS; the hole transfer layer is made of P-type ZnS which is Sb doped ZnS.

Description

technical field [0001] The invention belongs to the technical field of flat panel display, and in particular relates to a QLED device and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diodes (QLEDs) have become a strong competitor for next-generation display technology due to their advantages such as narrow half-peak width, adjustable color, and solution-based preparation. Researchers have conducted research on QLEDs from different angles, including research on QDs, HTL, ETL and electrodes; and research on the structure, performance and stability of devices. [0003] US patent (US7880377) reports a QLED device with substrate / anode / HTL / QDs / ETL / cathode structure; wherein, the shell layers of HTL, ETL, and QD are all made of the same compound. Since HTL, QDs, and ETL are all inorganic material layers, the invention prepares the quantum dot light-emitting layer by electrospraying, and prepares the HTL and ETL layers by molecular beam epi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/28
CPCH01L33/005H01L33/06H01L33/285H01L2933/0033
Inventor 王宇曹蔚然杨一行钱磊
Owner TCL CORPORATION
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