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Heterojunction thin film composed of same metals and oxygen family elements as well as preparation and application thereof

A technology of oxygen family elements and the same metal, applied in the direction of electrical components, structural parts, chemical instruments and methods, etc., can solve the problems of high requirements for thin film electrodes, limited deposition area, large salt consumption, etc., and achieve a wide range of applications, Simple equipment and good reproducibility

Active Publication Date: 2018-09-04
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The temperature in the hydrothermal reaction process is high, and the deposition area is limited, which greatly limits its application. It has high requirements for the preparation of thin film electrodes and low adaptability; the ion exchange method must be the solubility product of the two substances. Similar, and will produce excessive regeneration waste liquid; the cycle is longer; the salt consumption is large; the discharge of a large amount of saline wastewater is easy to cause pipeline corrosion; the selectivity to metal oxides is small

Method used

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  • Heterojunction thin film composed of same metals and oxygen family elements as well as preparation and application thereof
  • Heterojunction thin film composed of same metals and oxygen family elements as well as preparation and application thereof
  • Heterojunction thin film composed of same metals and oxygen family elements as well as preparation and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0098] Antimony oxide (Sb 2 o 3 ) / antimony sulfide (Sb 2 S 3 ) heterojunction preparation

[0099] 1. Pretreatment of deposition substrate

[0100] Choose 30×30×2mm FTO glass as the deposition substrate: a. Degreasing agent cleaning of the substrate: use detergent as the degreasing agent, place the glass substrate in the aqueous solution of detergent, and clean it by ultrasonic vibration at a high temperature of 30°C 60min. b. High-temperature alkali solution cleaning of the substrate: Add 100mL of ammonia water and 100mL of deionized water into a 500mL beaker, place the glass substrate in the above solution, and clean it with ultrasonic vibration at a high temperature of 50°C for 30min. c. Ultrasonic vibration ethanol cleaning of the substrate: Take 200mL of absolute ethanol and add it to a 500mL beaker, place the glass substrate in ethanol, and clean it by ultrasonic vibration at a high temperature of 40°C for 60min. d. Ultrasonic vibration washing of the substrate: th...

Embodiment 2

[0109] Bismuth oxide (Bi 2 o 3 ) / bismuth sulfide (Bi 2 S 3 ) heterojunction preparation

[0110] 1. Pretreatment of deposition substrate

[0111] The method of Example 1 is used to pretreat the substrate.

[0112] 2. Preparation of metal oxide prefabricated film

[0113] Weigh 1.49g of bismuth nitrate into a beaker, add 10mL of concentrated nitric acid to it, and then add deionized water to prepare 60mL of bismuth nitrate solution. Add saturated sodium hydroxide solution dropwise to the solution, adjust the pH to 10 (temperature lower than 40°C) to obtain a bismuth nitrate precursor solution, put the pretreated deposition substrate into the precursor solution, and deposit at 60°C for 60 minutes , washed several times with deionized water, and dried. The thickness of the oxide layer was 5 μm.

[0114] 3. Vulcanization heat treatment

[0115] Wash and dry the above film prefabricated layer and put it in the reaction equipment, add an appropriate amount of sulfur powder ...

Embodiment 3

[0118] Indium oxide (ln 2 o 3 ) / indium sulfide (ln 2 S 3 ) heterojunction preparation

[0119] 1. Pretreatment of deposition substrate

[0120] The method of Example 1 is used to pretreat the substrate.

[0121] 2. Preparation of metal oxide prefabricated film

[0122] Weigh 0.88g of indium chloride into a beaker, add 10mL of concentrated hydrochloric acid to it, and then add deionized water to prepare 60mL of indium chloride solution. Add saturated sodium hydroxide solution dropwise to the solution, adjust the pH to 8 (temperature lower than 40°C) to obtain an indium chloride precursor solution, put the pretreated deposition substrate into the precursor solution, and deposit at 90°C for 40 minutes Then, it was washed several times with deionized water and dried. The thickness of the oxide layer was 600 nm.

[0123] 3. Vulcanization heat treatment

[0124] Wash and dry the above film prefabricated layer and put it in the reaction equipment, add an appropriate amount o...

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Abstract

The invention relates to a preparation method of a heterojunction thin film composed of same metals and oxygen family elements. The preparation method comprises the following steps: mixing metal salt,acid and water to obtain a metal precursor solution; depositing the metal precursor solution on the surface of a base under the conditions that the pH is 2-11, and the temperature is 30-90 DEG C to form metal oxide; performing heat treatment on the metal oxide and at least one of sulfur source and selenium source for 2-120 minutes at a temperature of 100-600 DEG C and an air pressure of minus 0.05-1 MPa to obtain the heterojunction thin film; the heterojunction thin film is a metal oxide-sulfide heterojunction thin film, a metal oxides-selenide heterojunction thin film or a metal oxide-sulfide-selenide heterojunction thin film. The invention further discloses the heterojunction thin film prepared by the preparation method provided by the invention and application thereof. The preparationmethod has the advantages of being simple in equipment, low in cost, easy for large-area continuous production and the like; the prepared thin film is controllable in thickness component, dense and uniform in appearance and good in crystallization and optoelectronic properties.

Description

technical field [0001] The invention belongs to the technical field of photoelectric materials and new energy sources, and in particular relates to a heterojunction thin film composed of the same metal and oxygen group elements. Background technique [0002] In the photocatalytic system of semiconductor materials, realizing the effective separation of photogenerated electrons and holes is an effective way to apply photocatalysis to energy and environmental problems. Common single compound photocatalysts are metal oxide or sulfide semiconductor materials. Such as TiO 2 、WO 3 , ZnS, CdS, etc. They have been widely used in the field of photocatalysis. However, due to internal defects and intrinsic recombination of a single semiconductor material, nearly 90% of the photogenerated electron holes recombine directly inside and on the surface of the semiconductor instead of interacting with water or pollutants. This leads to the waste of most of the photogenerated electron hole...

Claims

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Application Information

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IPC IPC(8): B01J27/04B01J27/057B01J35/06H01L31/0224H01M4/36H01M4/48H01M4/58H01M10/0525
CPCH01L31/022425H01M4/362H01M4/48H01M4/581H01M10/0525B01J27/04B01J27/0573B01J35/39B01J35/33B01J35/59Y02E60/10
Inventor 蒋良兴陈佳汪颖刘芳洋赖延清李劼
Owner CENT SOUTH UNIV
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