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Heterojunction solar cell with buried grid structure

A solar cell and heterojunction technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problem of hydrogenated amorphous silicon attenuation, which has not been well solved, to increase visible light absorption, improve performance, and reduce grids. Effect of Line Shading Area

Inactive Publication Date: 2012-10-03
ZHEJIANG JINKO SOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the attenuation of the photoconductivity of hydrogenated amorphous silicon under light has not been well resolved.

Method used

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  • Heterojunction solar cell with buried grid structure
  • Heterojunction solar cell with buried grid structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] like figure 1 As shown, a heterojunction solar cell with a buried gate structure includes an N-type single crystal silicon substrate 9, a battery positive electrode 1, a groove 2, an intrinsic hydrogenated nano-silicon film layer 6, a P-type hydrogenated nano-silicon film layer 5, P-type heavily doped hydrogenated nano-silicon carbide film layer 4 , N-type hydrogenated nano-silicon film layer 7 , transparent conductive film 3 , battery negative electrode 8 . The N-type monocrystalline silicon substrate 9 is provided with a groove 2 on the front (main light-receiving surface), and a layer of intrinsic hydrogenated nano-silicon film layer 6, P-type hydrogenated nano-silicon film layer 5 and P-type heavy silicon film layer are sequentially deposited on the front side. Doping hydrogenated nano-silicon carbide film layer 4, and preparing a layer of transparent conductive film 3 on the P-type heavily doped hydrogenated nano-silicon carbide film layer 4; the back of the N-type...

Embodiment 2

[0020] The structure of the heterojunction solar cell with buried gate structure is the same as that in Embodiment 1.

[0021] The preparation method of the buried gate structure heterojunction solar cell in Example 2 is as follows:

[0022] The N-type single crystal silicon substrate 9 used has a thickness of 200 μm and a resistivity of 3Ω·cm. Laser grooves are cut on one side of the N-type single crystal silicon substrate 9 to form grooves 2 with a width of 35 μm and a depth of 18 μm. Then, the grooved N-type single crystal silicon substrate 9 is textured in the mixed solution described in Embodiment 1 to form a pyramid-shaped textured surface. Then, the N-type single crystal silicon substrate 9 after texturing is cleaned and dried by an acid cleaning process, and the surface cleanliness of the silicon wafer is required to be very high. Then use PECVD technology to deposit intrinsic hydrogenated nano-silicon film layer 6 on the front side of N-type single crystal silicon su...

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Abstract

The invention relates to a heterojunction solar cell with a buried grid structure, which comprises an N-type monocrystalline silicon substrate, anodes, cathodes, two layers of transparent conductive thin films and a plurality of film layers prepared and formed on the front and the back surfaces of the N type monocrystalline silicon substrate; each of the film layers prepared and formed on the front surface of the N type monocrystalline silicon substrate comprises a P type hydrogenated nanometer silicon film layer and a P type heavily-doped hydrogenated nanometer silicon carbide film layer and forms a p+ / p high-low junction; the two layers of transparent conductive thin films are respectively prepared and formed on the outermost layers of the front surface and the back surface of the N type monocrystalline silicon substrate; grooves are formed on the front surface of the N type monocrystalline silicon substrate; the anodes of the cell are arranged in the grooves; and the cathodes of the cell are arranged on the back surface of the N type monocrystalline silicon substrate. The heterojunction solar cell has the beneficial effects that the P type heavily-doped hydrogenated nanometer silicon carbide film layer is used as a broadband gap window layer, the adsorption of visible light is increased, and a higher built-in electric field is formed in heavy doping; the shading area of a gate line is reduced by utilizing a grooving technology; and the performance of the solar cell is improved by hydrogenated nanometer silicon with high electrical property and photoconduction, so that the purposes of high efficiency and low cost are realized.

Description

technical field [0001] The invention relates to the technical field of semiconductor solar cells, in particular to a buried gate heterojunction solar cell structure. Background technique [0002] At present, traditional crystalline silicon solar cells use high-temperature manufacturing processes in production, such as diffusion above 900°C and high-temperature sintering above 850°C, which consume a lot of energy and cost. With the development of photovoltaic industry technology, it is the development direction of solar cells to find new technologies and new methods to reduce the production cost of solar cells and improve conversion efficiency. [0003] The grid lines of traditional heterojunction solar cells are directly printed on the light-receiving surface of the solar cell. Reducing the shading area of ​​the grid lines on the light-receiving surface of the solar cell is an important direction to improve the conversion efficiency of solar cells. However, in tradi...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/0224H01L31/077
CPCY02E10/50Y02E10/547
Inventor 涂宏波王学林聂金艳梅晓东汤安民
Owner ZHEJIANG JINKO SOLAR CO LTD
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