Phosphate molecule modified perovskite photovoltaic device and preparation method and application thereof
A technology of photovoltaic devices and phosphate radicals, applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electric solid-state devices, etc.
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[0051] The preparation method of the present invention will be further described in detail in conjunction with specific examples below. It should be understood that the following examples are only for illustrating and explaining the present invention, and should not be construed as limiting the protection scope of the present invention. All technologies realized based on the above contents of the present invention are covered within the scope of protection intended by the present invention.
[0052] The experimental methods used in the following examples are conventional methods unless otherwise specified; the reagents and materials used in the following examples can be obtained from commercial sources unless otherwise specified.
Embodiment 1
[0054] The invention provides a perovskite photovoltaic device modified by phosphate molecules and a preparation method thereof, comprising the following steps:
[0055] (1) Using ITO conductive glass as the substrate (thickness is 50nm), spin-coat 1mg / mL P3CTS aqueous solution on the ITO conductive glass, the spin-coating speed is 3000rpm, the spin-coating time is 30s, and anneal at 150°C for 30min after the spin-coating is completed. The thickness of the P3CTS layer is 20nm;
[0056] (2) Spin-coat 5mg / mL PAS aqueous solution on the ITO-P3CTS obtained in step (1), the spin-coating speed is 3000rpm, and the spin-coating time is 30s. After the spin-coating is completed, anneal at 150°C for 15min. 10nm;
[0057] (3) Add 1M CH 3 NH 3 PB 3 The perovskite solution was spin-coated on the ITO-P3CTS-PAS obtained in (2), the spin-coating speed was 3000rpm, the spin-coating time was 30s, annealed at 90°C for 8min after spin-coating, and the thickness of the perovskite layer was 400n...
Embodiment 2
[0061] The invention provides a perovskite photovoltaic device modified by phosphate molecules and a preparation method thereof, comprising the following steps:
[0062] (1) Using ITO conductive glass as the substrate (thickness 200nm), spin-coat 1mg / mL P3CTS aqueous solution on the ITO conductive glass, the spin-coating speed is 3000rpm, the spin-coating time is 20s, and anneal at 150°C for 20min after the spin-coating is completed. The thickness of the P3CTS layer is 50nm;
[0063] (2) Spin-coat 5mg / mL GD6P aqueous solution on the ITO-P3CTS obtained in step (1), the spin-coating speed is 4000rpm, and the spin-coating time is 20s. After the spin-coating is completed, anneal at 150°C for 20min. 5nm;
[0064] (3) Add 1M CH 3 NH 3 PB 3 The perovskite solution is spin-coated on the ITO-P3CTS-GD6P obtained in (2), the spin-coating speed is 3000rpm, the spin-coating time is 30s, after the spin-coating is completed, anneal at 90°C for 8min, and the thickness of the perovskite la...
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Abstract
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