Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Phosphate molecule modified perovskite photovoltaic device and preparation method and application thereof

A technology of photovoltaic devices and phosphate radicals, applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electric solid-state devices, etc.

Active Publication Date: 2020-06-02
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, there are still many problems to be solved before the large-scale application of perovskite solar cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phosphate molecule modified perovskite photovoltaic device and preparation method and application thereof
  • Phosphate molecule modified perovskite photovoltaic device and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0051] The preparation method of the present invention will be further described in detail in conjunction with specific examples below. It should be understood that the following examples are only for illustrating and explaining the present invention, and should not be construed as limiting the protection scope of the present invention. All technologies realized based on the above contents of the present invention are covered within the scope of protection intended by the present invention.

[0052] The experimental methods used in the following examples are conventional methods unless otherwise specified; the reagents and materials used in the following examples can be obtained from commercial sources unless otherwise specified.

Embodiment 1

[0054] The invention provides a perovskite photovoltaic device modified by phosphate molecules and a preparation method thereof, comprising the following steps:

[0055] (1) Using ITO conductive glass as the substrate (thickness is 50nm), spin-coat 1mg / mL P3CTS aqueous solution on the ITO conductive glass, the spin-coating speed is 3000rpm, the spin-coating time is 30s, and anneal at 150°C for 30min after the spin-coating is completed. The thickness of the P3CTS layer is 20nm;

[0056] (2) Spin-coat 5mg / mL PAS aqueous solution on the ITO-P3CTS obtained in step (1), the spin-coating speed is 3000rpm, and the spin-coating time is 30s. After the spin-coating is completed, anneal at 150°C for 15min. 10nm;

[0057] (3) Add 1M CH 3 NH 3 PB 3 The perovskite solution was spin-coated on the ITO-P3CTS-PAS obtained in (2), the spin-coating speed was 3000rpm, the spin-coating time was 30s, annealed at 90°C for 8min after spin-coating, and the thickness of the perovskite layer was 400n...

Embodiment 2

[0061] The invention provides a perovskite photovoltaic device modified by phosphate molecules and a preparation method thereof, comprising the following steps:

[0062] (1) Using ITO conductive glass as the substrate (thickness 200nm), spin-coat 1mg / mL P3CTS aqueous solution on the ITO conductive glass, the spin-coating speed is 3000rpm, the spin-coating time is 20s, and anneal at 150°C for 20min after the spin-coating is completed. The thickness of the P3CTS layer is 50nm;

[0063] (2) Spin-coat 5mg / mL GD6P aqueous solution on the ITO-P3CTS obtained in step (1), the spin-coating speed is 4000rpm, and the spin-coating time is 20s. After the spin-coating is completed, anneal at 150°C for 20min. 5nm;

[0064] (3) Add 1M CH 3 NH 3 PB 3 The perovskite solution is spin-coated on the ITO-P3CTS-GD6P obtained in (2), the spin-coating speed is 3000rpm, the spin-coating time is 30s, after the spin-coating is completed, anneal at 90°C for 8min, and the thickness of the perovskite la...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a phosphate molecule modified perovskite photovoltaic device and a preparation method and application thereof. Phosphoric acid organic molecules are used, an interface modification layer containing phosphate molecules is introduced into an interface layer of a perovskite photovoltaic device; the perovskite photoactive layer in the perovskite photovoltaic device is modifiedto passivate the surface defects of the perovskite photoactive layer and improve the transmission efficiency of electrons and holes at the interface of the device, so that the perovskite photovoltaicdevice with high photoelectric conversion efficiency and high stability is realized. The interface defects in the perovskite photovoltaic device are passivated. The phosphate radical-containing molecular modified perovskite photovoltaic device prepared by adopting the method is environment-friendly and low in energy consumption.

Description

technical field [0001] The invention belongs to the field of photovoltaic device materials, and relates to a perovskite photovoltaic device modified by phosphate radical molecules, a preparation method and application thereof. Background technique [0002] The demand for energy in modern society is increasing day by day, while traditional fossil energy reserves are limited and will eventually be exhausted one day. In addition, the process of releasing energy through chemical combustion has caused great pollution to the environment, affecting the ecological environment of the earth and human beings. Physical and mental health, for the long-term development of mankind, it is becoming more and more urgent to seek new clean energy. As the source of energy for the earth, the sun can be said to be inexhaustible and inexhaustible for the length of our lives. Therefore, the research on the absorption and utilization of solar energy is of great significance to our human life and lon...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K85/761H10K30/00Y02E10/549
Inventor 冷炫烨周惠琼唐智勇
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products