Selenium antimony sulfide thin film solar cell with 3D structure and preparation method thereof

A thin-film solar cell and antimony sulfide technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of low conversion efficiency of thin-film solar cells and serious interface recombination, so as to improve cell conversion efficiency, reduce interface recombination, and improve photoelectricity. performance effect

Pending Publication Date: 2022-02-15
SUZHOU TALESUN SOLAR TECH CO LTD +1
View PDF9 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this prepared Sb 2 (S, Se) 3 Thin film solar cells usually have low conversion efficiency and serious interfacial recombination

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Selenium antimony sulfide thin film solar cell with 3D structure and preparation method thereof
  • Selenium antimony sulfide thin film solar cell with 3D structure and preparation method thereof
  • Selenium antimony sulfide thin film solar cell with 3D structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0037] The present application also provides a preparation method of a selenium sulfide antimony thin film solar cell with a 3D structure in order to prepare the above Sb with a 3D structure 2 (S, Se) 3 A thin film solar cell comprising the steps of:

[0038] S1. Substrate cleaning: using the substrate glass as the window layer, cleaning the substrate glass;

[0039] S2. Preparation of buffer layer: Precursor solution A is obtained by configuring titanium-containing compound and organic alcohol solution, and the precursor solution A is spin-coated on the substrate glass described in step S1, dried and annealed to obtain TiO 2 seed layer film;

[0040] Dilute the titanium-containing compound with ultra-pure water and mix it evenly, configure it in an acidic environment to obtain a precursor solution B, add a template agent or ammonium fluorotitanate to the precursor solution B, and place the TiO 2 Preparation of 3D-TiO by Hydrothermal Synthesis of Seed Layer Thin Films 2 ar...

Embodiment 1

[0056] S1. Take 1ml of tetrabutyl titanate and 20ml of ethanol solution, stir for 0.5h to obtain precursor solution A, spin-coat on the surface of FTO glass at a speed of 1500rpm, pre-anneal on a heating platform at 100°C for 3min, Spin-coat 10 layers and heat-treat TiO in a muffle furnace at 200 °C for 60 min 2 seed layer film;

[0057] S2. Weigh 0.5ml of tetrabutyl titanate into 25ml of ultrapure water, adjust the pH to 0.5 with concentrated hydrochloric acid, stir for 10min, then add 0.5g of ammonium fluorotitanate, and obtain precursor solution B after the solution is clarified. Transfer the precursor solution B to a Teflon tank, put TiO 2 The seed layer film was heated at 180°C for 16h and then heat-treated at 550°C for 60min to obtain TiO 2 array;

[0058] S3. Weigh 0.05mmol of barium hydroxide in 30ml of ethanol, diethylene glycol, and propanol mixed solution, adjust the pH of the system to 9 with NaOH to regulate BaTiO 3 Morphology, obtain the precursor solution C,...

Embodiment 1

[0061] Comparative experiment 1 of embodiment 1

[0062] S1. Take 1ml of tetrabutyl titanate and 20ml of ethanol solution, stir for 0.5h to obtain precursor solution A, spin-coat on the surface of FTO glass at a speed of 1500rpm, pre-anneal on a heating platform at 100°C for 3min, Spin-coat 10 layers and heat-treat TiO in a muffle furnace at 200 for 60 min 2 seed layer film;

[0063] S2. Weigh 0.5ml of titanium-containing compound in 25ml of ultrapure water, adjust the pH to 0.5 with concentrated hydrochloric acid, stir for 10min, then add 0.5g of ammonium fluorotitanate, and obtain precursor solution B after the solution is clarified. Bulk solution B was transferred to a polytetrafluoroethylene tank and put in TiO 2 Seed layer film, heated at 180°C for 16h, then heat-treated at 550°C for 60min to TiO 2 array;

[0064]S3. Weigh 1mmol of tartaric acid, 9mmol of thiourea, and 2mmol of antimony chloride and dissolve them in 100ml of ultrapure water to obtain precursor solutio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
lengthaaaaaaaaaa
Login to view more

Abstract

The invention relates to a selenium antimony sulfide thin film solar cell with a 3D structure and a preparation method thereof, and belongs to the technical field of cell preparation. The thin film solar cell comprises substrate glass, a TiO2 layer, a BaTiO3 thin film layer, a Sb2 (S, Se) 3 thin film layer, a hole transport layer and an electrode layer which are sequentially stacked from bottom to top. The invention further discloses a preparation method of the Sb2 (S, Se) 3 thin film solar cell, the TiO2 layer of the prepared Sb2 (S, Se) 3 thin film solar cell is of a 3D-TiO2 array structure, pn junctions are formed by the TiO2 layer and the Sb2 (S, Se) 3 thin film layer, the BaTiO3 thin film serves as a passivation layer to be inserted between the pn junctions, and recombination of heterojunctions at an interface is reduced. The BaTiO3 thin film layer and the TiO2 layer form a double-buffer-layer structure, the width of a depletion layer is increased, and the open-circuit voltage of the cell can be effectively improved. And the ferroelectricity of BaTiO3 is utilized, so that the separation capacity of current carriers and the open-circuit voltage of the battery are improved. And the thickness of the BaTiO3 film is relatively small, so that the problem of high internal resistance of the battery caused by poor conductivity of BaTiO3 is solved based on the quantum tunneling effect.

Description

technical field [0001] The invention relates to a selenium sulfide antimony thin film solar cell with a 3D structure and a preparation method thereof, belonging to the technical field of cell preparation. Background technique [0002] Finding low-cost, high-efficiency, and high-stability photovoltaic materials is an important part of solar cell research. To this end, a series of photovoltaic materials and their corresponding device structures have emerged, such as silicon cells, thin-film solar cells, and perovskite solar cells. In recent years, antimony selenium sulfide (Sb 2 (S, Se) 3 ) was studied as a thin-film solar cell absorber material, Sb 2 (S, Se) 3 It is an orthogonal structure, the phase composition is easy to control, and the band gap is adjustable in the range of 1.1-1.7eV, and the optical absorption coefficient is as high as 10 5 cm -1 above. And the preparation of Sb 2 (S, Se) 3 The process temperature of the thin film is low, which is very suitable ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/032H01L31/0352H01L31/0445H01L31/072H01L31/18
CPCH01L31/072H01L31/18H01L31/032H01L31/02167H01L31/035272H01L31/1868H01L31/0445Y02E10/50Y02P70/50
Inventor 王威钱洪强沈鸿烈张树德
Owner SUZHOU TALESUN SOLAR TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap