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34 results about "Quantum tunnelling" patented technology
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Quantum tunnelling or tunneling (US "tunneling") is the quantum mechanical phenomenon where a subatomic particle passes through a potential barrier. Quantum tunnelling is not predicted by the laws of classical mechanics where surmounting a potential barrier requires enough potential energy.
True random number sequence generation method based on quantum tunneling effect
ActiveCN108776582AIncrease randomnessLow costRandom number generatorsDesign optimisation/simulationQuantum tunnellingComputer science
The invention provides a true random number sequence generation method based on the quantum tunneling effect. A quantum puncturing source is used to generate an original random sequence; after the probability of the tunneling of the quantum tunneling source is stabilized, the original random sequence generated after the tunneling probability is stable is denoised by the Toeplitz-hashing method toobtain the final true random number sequence. The elements of the random number sequence generated by the invention are independent of each other, which means that the random number sequence has goodrandomness; at the same time, the system for implementing the method is simple and low in cost.
Owner:TSINGHUA UNIV
Add-on type liquid silicon rubber/organic montmorillonite nanometer composite material and its preparation method
InactiveCN1730560AImprove mechanical propertiesImprove thermal stabilityChemical reactionBoundary effects
The invention discloses a liquid silicon rubber / organic montmorillonite nano composite material and its preparing process by employing in-situ aggregation intercalation technology, after the montmorillonite's intercalation, it can be dispersed into polymeric matrix by the form of nano sheets, which will show a small dimensional effect, boundary effect and quantum tunnelling effect. The contact plane and activity can be increased substantially.
Owner:SHANGHAI UNIV OF ENG SCI
Image capturing device having zoom control unit
InactiveUS20060238644A1Reduce riskRisk of malfunctionTelevision system detailsColor television detailsElectrical resistance and conductanceQuantum tunnelling
An image capturing device including a zoom control unit with a variable zoom speed feature. The image capturing device includes a case having a manipulation hole, a holder provided inside the case, a knob, a plurality of quantum tunnelling composites (QTCs) housed in the holder, and a PCB. The knob is rotatably supported by the holder while having a portion exposed through the manipulation hole. Resistance of the QTC changes according to pressure applied from the knob. A plurality of current detectors is mounted on the PCB to detect current flowing through the QTCs. Voltage is applied across positive and negative electrodes formed on each QTC. No current flows through the QTC when no pressure is applied, and its resistance gradually decreases and current flowing therethrough gradually increases as pressure is applied. Each current detector detects the current and changes zoom speed in multiple steps according to the detected current.
Owner:SAMSUNG ELECTRONICS CO LTD
High-voltage-resisting GaN-based JBS diode based on gradient drift region and production method of high-voltage-resisting GaN-based JBS diode
ActiveCN108231911AWide band gapImprove breakdown voltageSemiconductor/solid-state device manufacturingSemiconductor devicesQuantum tunnellingRepeatability
The invention discloses a high-voltage-resisting GaN-based JBS diode based on a gradient drift region and a production method of the high-voltage-resisting GaN-based JBS diode, and solves the problemthat expected breakdown voltage cannot be reached in the prior art. The high-voltage-resisting GaN-based JBS diode comprises a cathode (1), an n type GaN substrate (2), an n type GaN drift layer (3),an n type AlxGaN structural layer (4), a p type AlyGaN structural layer (5), a plurality of p type GaN structural layers (6) and an anode (7), wherein Al component x of the AlxGaN structural layer isgradually changed from 0 to 0.1, and the doping concentration is 2 to 10x1016cm<-3>; Al component y of the p type AlyGaN structural layer is gradually changed from 0.1 to 0, and the doping concentration is 2x1016cm<-3> to 2x1018cm<-3>. The high-voltage-resisting GaN-based JBS diode disclosed by the invention has the advantages that a quantum tunneling effect is reduced and the breakdown voltage ofa device is improved; in addition, process repeatability and controllability for producing the device are high; the high-voltage-resisting GaN-based JBS diode can be used for a power device.
Owner:XIDIAN UNIV
High-luminous efficiency light emitting diode epitaxial slice and preparation method thereof
ActiveCN105514233AReduce potential energyIncrease hole concentrationSemiconductor devicesQuantum tunnellingActive layer
The invention discloses a high-luminous efficiency light emitting diode epitaxial slice and a preparation method thereof and belongs to the light-emitting diode field. The high-luminous efficiency light emitting diode epitaxial slice includes a substrate as well as a u type GaN layer, an n-type GaN layer, a multiple-quantum well active layer, a P-type AlGaN layer and a P-type GaN carrier layer which cover the substrate sequentially, wherein the multiple-quantum well active layer includes a plurality of InGaN well layers and a plurality of Gan barrier layers which grow alternately, and the P-type AlGaN layer includes a first P-type AlGaN sub layer, a u type GaN sub layer and a second P-type AlGaN sub layer which cover the multiple-quantum well active layer sequentially. According to the high-luminous efficiency light emitting diode epitaxial slice, potential energy required by holes in the P-type GaN carrier layer to climb over the P-type AlGaN layer can be decreased; quantum states can be formed in the u type GaN sub layer; holes in the P-type GaN carrier layer, of which the potential energy is lower than the potential energy for climbing over the P-type AlGaN layer, can tunnel the u type GaN sub layer through the quantum tunneling effect, and can be further transmitted into quantum wells, and therefore, hole concentration in the multiple-quantum well active layer can be improved.
Owner:HC SEMITEK CORP
Double-gate TFET with graphene strip heterojunction and switch characteristic enhance method thereof
ActiveCN109037321AReduced subthreshold swingImprove switching characteristicsTransistorSemiconductor/solid-state device manufacturingHeterojunctionPower flow
The invention discloses a graphene strip heterojunction double-gate TFET and a switch characteristic lifting method thereof. How to increase the on-state current of TFET is an important research direction of TFET. The source region, the drain region and the channel between the source region and the drain region constitute a graphene band heterojunction; The channel consists of the first section and the second section along the direction from the source area to the drain area. The source region, the second channel region and the drain region are all armchair graphene nanoribbons. The stretchingdirection of the first segment of the channel is at an angle to the stretching direction of the armchair graphene nano band. At the close state, the first section of the channel is a band gap armchair graphene nano band along the length direction of the device, and the density of regional states is 0, so that the close state current is restrained; and at the close state, the first section of thechannel is a band gap armchair graphene nano band along the length direction of the device, and the density of regional states is 0; In the open state, there is a current in the channel, the first section of the channel is a sawtooth graphene band along the current transmission direction, and there is no band gap in the first section of the channel, which promotes the quantum tunneling effect between the source region and the channel, and enhances the open state current.
Owner:HANGZHOU DIANZI UNIV
Coupled quantum dot memristor
ActiveUS20190058117A1More energyHigh strengthElectrical apparatusDigital storageCapacitanceQuantum dot
The present disclosure relates to novel memristive devices, uses thereof, and processes for their preparation. In a first aspect, the disclosure provides a quantum memristor, including a first quantum dot (QD1) which is capacitively coupled to a second quantum dot (QD2), a source electrode, a drain electrode, and a bath electrode, wherein the source electrode and the drain electrode are coupled via quantum tunnelling to QD1 and the bath electrode is coupled via quantum tunnelling to QD2, and wherein QD2 is capacitively coupled to either the source electrode or the drain electrode.
Owner:OXFORD UNIV INNOVATION LTD
Preparation method of p-type dye sensitization battery
The invention relates to a preparation method of a p-type dye sensitization battery, and belongs to the fields of material preparation and solar cells. The method comprises the following steps that a fine and dense micro-nano structure is formed on a nickel sheet by femtosecond laser, then the structure is oxidized at high temperature in the air, and a dense nickle protoxide (NiO) layer is formed on the nickle sheet; the p-type dye sensitization battery is prepared by combining an ultra-thin dense alumina (Al2O3) passivation layer; because the specific surface area of the micro-nano structure on the surface of the nickle sheet is very large, the absorbed dye quantity is increased; and in addition, because the NiO layer is directly oxidized on the nickle sheet, the NiO layer and the nickle sheet are contacted tightly, the NiO layer does not crack and the transmission of a current carrier to an electrode is good. Furthermore, when the ultra-thin (thinner than 1nm) Al2O3 passivation layer reduces the charge recombination on the NiO surface, because only several atomic layers exist, the quantum tunneling effect is significant, and the impact on the electrical transmission is small.
Owner:南通东湖国际商务服务有限公司
Method for generating random numbers and associated random number generator
A random signal can be obtained from a random tunnelling of charges from one conductor to another conductor across a quantum tunnelling barrier. The random signal can be amplified and associated to a random number. The association can be performed repetitively to generate a sequence of random numbers.
Owner:QUANTUM NUMBERS CORP
Miniature electron-position collision system and method for magnetizing electromagnetic product by using same
InactiveCN104538148AImprove electromagnetic performanceIncrease storage capacityPiezoelectric/electrostriction/magnetostriction machinesMagnetic bodiesWork periodElectricity
The invention relates to a miniature electron-position collision system and a method for magnetizing an electromagnetic product by using the same. The miniature electron-position collision system includes two piezoelectric devices, and a metal carrier, a wire and an electromagnetic product fixed on an electronic display. According to the miniature electron-position collision system and the method for magnetizing the electromagnetic product by using the same, the quantum tunneling effect and the piezoelectric principle are used as base, electron-position collision of the metal carrier is performed by pressing the two piezoelectric devices, so that magnetization of the electromagnetic device is reinforced, and the related electromagnetic performances of the electromagnetic device is promoted, wherein the storage capacity of the accumulator can be improved for about 30%, and the purpose of longing field work time is achieved.
Owner:黄元雄
Electrolysis electrode and preparation method thereof, electrolysis device and clothes treatment equipment
PendingCN111847596ADoes not affect electrocatalytic performanceExtend your lifeWater treatment compoundsWater contaminantsElectrolysisPhysical chemistry
The embodiment of the invention provides an electrolysis electrode and a preparation method thereof, an electrolysis device and clothes treatment equipment. The electrolysis electrode comprises a basebody, a transition layer and an electrode catalytic material layer, the transition layer is attached to the surface of the base body, the electrode catalytic material layer is attached to the surfaceof the transition layer, and the thickness of the transition layer meets the requirement that electrons can penetrate through the transition layer. According to the electrolysis electrode, the transition layer is relatively thin so that the electrons can penetrate through the transition layer due to a quantum tunneling effect, and the electro-catalytic performance of the electrolytic electrode isnot influenced basically; furthermore, the transition layer plays a role in transition connection, the phenomenon that in the prior art, the electrode catalytic material layer cracks due to the difference of expansion coefficients between the base body and the electrode catalytic material layer can be greatly improved, and the service life of the electrolysis electrode is prolonged.
Owner:WUXI LITTLE SWAN ELECTRIC CO LTD
Back structure of thermo-photovoltaic cell
PendingCN108538949AImprove photoelectric conversion efficiencyEasy to collectPhotovoltaic energy generationSemiconductor devicesCharge carrierQuantum tunnelling
The invention provides a back structure of a thermo-photovoltaic cell. The back structure comprises a cadmium telluride layer. The back structure is characterized in that a groove is arranged in the back surface of the cadmium telluride layer. A silica dioxide film layer of 5-10nm is arranged in the groove. An aluminum layer is printed on the surface of the silica dioxide film layer. The silica dioxide film layer and the aluminum layer form Mie-scattering to the light reaching the bottom surface and have high backscattering effect so that the photoelectric conversion efficiency of the thermo-photovoltaic cell can be enhanced. The silica dioxide and the aluminum dielectric form the "quantum tunneling effect" so that collection of the carriers can be facilitated and the photoelectric conversion efficiency can be greatly enhanced.
Owner:无锡马丁格林光伏科技有限公司
Quantum-effect device based on MIS (Metal-Insulator-Semiconductor) structure
InactiveCN102231391AReduce power consumptionControl tunneling efficiencySemiconductor/solid-state device manufacturingSemiconductor devicesGratingSemiconductor structure
The invention belongs to the technical field of quantum-effect devices, in particular relates to a quantum-effect device based on an MIS (Metal-Insulator-Semiconductor) structure. The quantum-effect device comprises a semiconductor substrate, a source electrode, a drain electrode, a tunneling insulator layer and a metal layer, wherein the source electrode, the drain electrode, the tunneling insulator layer and the metal layer are arranged on the semiconductor substrate; and the metal layer, the tunneling insulator layer and the semiconductor layer form an MIS structure. The quantum-effect device further comprises a grid electrode and a grating type insulator layer, wherein the grid electrode is arranged at one side of the MIS structure, and the grating type insulator layer is arranged between the MIS structure and the grid electrode. According to the quantum-effect device based on the MIS structure, a quantum tunneling effect and a gated diode are integrated together, and a gated metal insulator semiconductor diode based on the quantum tunneling effect is manufactured by using a platform process. A suitable bias voltage is applied to the quantum-effect device so that the tunnelingefficiency of the quantum-effect device can be controlled, a drain current can be reduced to be much smaller than the drain current of a normal diode, and the power dissipation of a chip is reduced.
Owner:FUDAN UNIV
Miniature electronic collision system and method for improving electronic equipment by miniature electronic collision system
InactiveCN105470592AIncrease storage capacitySolve the problem of polluting clean energySecondary cells servicing/maintenanceElectricityEngineering
The invention relates to a miniature electronic collision system and a method for improving electronic equipment by the miniature electronic collision system. The miniature electronic collision system comprises two piezoelectric devices, a metal carrier, a wire and an electronic product, wherein the metal carrier, the wire and the electronic product are fixed on an electronic display. On the basis of the quantum tunnelling effect and the piezoelectric principle, electronic collision is carried out on the metal carrier by pressing the double piezoelectric devices, so that the improvement effect on the electronic product is strengthened; the problems of slow response and the like of the electronic equipment are solved; related electronic equipment is relatively sensitive; the storage capacity of old low-capacity batteries in small manufacturers or other brands can be improved by about 30%; the target of prolonging the field work time is achieved; and the problems of environmental pollution and clean energy are solved.
Owner:黄元雄
Electron tunneling based enclosure type grid control metal-insulator device
InactiveCN102244102AImprove controlReduce power consumptionSemiconductor/solid-state device manufacturingSemiconductor devicesMetal insulatorGate insulator
The invention belongs to the technical field of quantum effect devices, particularly relates to an electron tunneling based enclosure type grid control metal-insulator device. The device comprises a semiconductor substrate, a source electrode, a drain electrode, a tunneling insulator layer, a metal layer, a gate insulator layer and a grid, wherein the source electrode, the drain electrode, the tunneling insulator layer and the metal layer are arranged on the semiconductor substrate; the metal layer, tunneling insulator layer and the semiconductor substrate form an MIS (metal-insulator-semiconductor) structure; the grid is arranged on the gate insulator layer and encloses the MIS structure. According to the invention, the electron tunneling based enclosure type grid control metal-insulatordevice is manufactured by adopting a platform process; the enclosure type grid is used to control the device, thus enhancing the control capacity of the grid; meanwhile, through applying proper bias voltage to the electron tunneling based enclosure type grid control metal-insulator device, the tunneling efficiency can be controlled, leakage current can be reduced to a degree far lower than that of a common diode, thus the power consumption of a chip can be reduced.
Owner:FUDAN UNIV
Selenium antimony sulfide thin film solar cell with 3D structure and preparation method thereof
PendingCN114050189AReduce thicknessIncrease the open circuit voltageFinal product manufacturePhotovoltaic energy generationHeterojunctionElectrical battery
The invention relates to a selenium antimony sulfide thin film solar cell with a 3D structure and a preparation method thereof, and belongs to the technical field of cell preparation. The thin film solar cell comprises substrate glass, a TiO2 layer, a BaTiO3 thin film layer, a Sb2 (S, Se) 3 thin film layer, a hole transport layer and an electrode layer which are sequentially stacked from bottom to top. The invention further discloses a preparation method of the Sb2 (S, Se) 3 thin film solar cell, the TiO2 layer of the prepared Sb2 (S, Se) 3 thin film solar cell is of a 3D-TiO2 array structure, pn junctions are formed by the TiO2 layer and the Sb2 (S, Se) 3 thin film layer, the BaTiO3 thin film serves as a passivation layer to be inserted between the pn junctions, and recombination of heterojunctions at an interface is reduced. The BaTiO3 thin film layer and the TiO2 layer form a double-buffer-layer structure, the width of a depletion layer is increased, and the open-circuit voltage of the cell can be effectively improved. And the ferroelectricity of BaTiO3 is utilized, so that the separation capacity of current carriers and the open-circuit voltage of the battery are improved. And the thickness of the BaTiO3 film is relatively small, so that the problem of high internal resistance of the battery caused by poor conductivity of BaTiO3 is solved based on the quantum tunneling effect.
Owner:SUZHOU TALESUN SOLAR TECH CO LTD +1
High-modulation-speed light emitting diode, modulation method thereof and manufacturing method thereof
The invention provides a high-modulation-speed light emitting diode, a modulation method thereof and a manufacturing method thereof. The PN junction region of the light emitting diode comprise a double-quantum-well structure. The double-quantum-well structure comprises a first quantum well and a second quantum well. The band gap of the first quantum well is larger than that of the second quantum well. The first quantum well radiates signal light, and the second quantum well radiates auxiliary light. Through a quantum tunneling effect, the first quantum well is coupled with the second quantum well. Through a dynamic process of carries in an energy space, the high-modulation-speed light emitting diode performs functions of realizing ultra-quick injection and ultra-quick extraction of the carriers from an energy area which is radiated by the signal light, reducing time required in rising edge and falling edge of the optical signal of the light emitting diode, and furthermore improving modulation speed of the light emitting diode.
Owner:郴州隆合半导体有限公司
High luminous efficiency light emitting diode epitaxial wafer and preparation method thereof
ActiveCN105514233BReduce potential energyIncrease hole concentrationSemiconductor devicesQuantum tunnellingActive layer
Owner:HC SEMITEK CORP
A Generating Method of True Random Number Sequence Based on Quantum Tunneling Effect
ActiveCN108776582BIncrease randomnessLow costRandom number generatorsDesign optimisation/simulationParticle physicsQuantum tunnelling
The invention provides a method for generating a true random number sequence based on the quantum tunneling effect. The quantum tunneling source is used to generate an original random sequence. After the tunneling probability of the quantum tunneling source is stable, the Topliz-Hash The Toeplitz-hashing method denoises the original random sequence generated after the tunneling probability is stabilized to obtain the final true random number sequence. The elements of the random number sequence generated by the invention are independent of each other, which means that the random number sequence has good randomness; meanwhile, the system for realizing the method is simple and the cost is low.
Owner:TSINGHUA UNIV
High modulation speed light emitting diode, modulation method and manufacturing method thereof
The invention provides a high-modulation-speed light emitting diode, a modulation method thereof and a manufacturing method thereof. The PN junction region of the light emitting diode comprise a double-quantum-well structure. The double-quantum-well structure comprises a first quantum well and a second quantum well. The band gap of the first quantum well is larger than that of the second quantum well. The first quantum well radiates signal light, and the second quantum well radiates auxiliary light. Through a quantum tunneling effect, the first quantum well is coupled with the second quantum well. Through a dynamic process of carries in an energy space, the high-modulation-speed light emitting diode performs functions of realizing ultra-quick injection and ultra-quick extraction of the carriers from an energy area which is radiated by the signal light, reducing time required in rising edge and falling edge of the optical signal of the light emitting diode, and furthermore improving modulation speed of the light emitting diode.
Owner:郴州隆合半导体有限公司
A micro-electron collision system and a method for magnetizing electromagnetic products using it
InactiveCN104538148BImprove electromagnetic performanceIncrease storage capacityPiezoelectric/electrostriction/magnetostriction machinesMagnetic bodiesElectricityElectronic systems
The present invention relates to a miniature electron-position collision system and a method for magnetizing an electromagnetic product by using the same. The present invention comprises two piezoelectric devices, and a metal carrier, a wire and an electromagnetic product that are fixed on an electronic display. According to the present invention, a quantum tunneling effect and a piezoelectric principle are used as base, electron-position collision of the metal carrier is performed by pressing the two piezoelectric devices, so that magnetization of an electromagnetic apparatus is reinforced, and related electromagnetic performance of the electromagnetic apparatus is improved. The storage capacity of an accumulator can be improved by about 30%, and the purpose of prolonging the service life of the accumulator in field work is achieved.
Owner:黄元雄
A kind of preparation method of p-type dye-sensitized battery
ActiveCN103280333BLight-sensitive devicesFinal product manufactureNano structuringElectrical battery
The invention relates to a preparation method of a P-type dye-sensitized battery, belonging to the fields of material preparation and solar cells. That is to use a femtosecond laser to form a fine and dense micro-nano structure on a nickel sheet, and then oxidize at a high temperature in the air to form a dense NiO layer on the nickel sheet; combined with an ultra-thin dense aluminum oxide (Al2O3) passivation layer to prepare a p-type Dye-sensitized battery; due to the micro-nano structure on the surface of the nickel sheet, the specific surface area is large, resulting in an increase in the amount of dye adsorption. In addition, because the NiO layer is directly oxidized on the nickel sheet, the two are in close contact, and the NiO layer will not When a fracture occurs, the carrier transport characteristics to the electrode are also good. And when the ultra-thin (less than 1nm) Al2O3 passivation layer reduces the charge recombination on the NiO surface, since there are only a few atomic layers, the quantum tunneling effect is obvious, so that it has little effect on electrical transmission.
Owner:南通东湖国际商务服务有限公司
High-voltage gan-based JBS diode based on gradient drift region and manufacturing method thereof
ActiveCN108231911BWide band gapImprove breakdown voltageSemiconductor/solid-state device manufacturingSemiconductor devicesQuantum tunnellingMaterials science
The invention discloses a high-voltage-resisting GaN-based JBS diode based on a gradient drift region and a production method of the high-voltage-resisting GaN-based JBS diode, and solves the problemthat expected breakdown voltage cannot be reached in the prior art. The high-voltage-resisting GaN-based JBS diode comprises a cathode (1), an n type GaN substrate (2), an n type GaN drift layer (3),an n type AlxGaN structural layer (4), a p type AlyGaN structural layer (5), a plurality of p type GaN structural layers (6) and an anode (7), wherein Al component x of the AlxGaN structural layer isgradually changed from 0 to 0.1, and the doping concentration is 2 to 10x1016cm<-3>; Al component y of the p type AlyGaN structural layer is gradually changed from 0.1 to 0, and the doping concentration is 2x1016cm<-3> to 2x1018cm<-3>. The high-voltage-resisting GaN-based JBS diode disclosed by the invention has the advantages that a quantum tunneling effect is reduced and the breakdown voltage ofa device is improved; in addition, process repeatability and controllability for producing the device are high; the high-voltage-resisting GaN-based JBS diode can be used for a power device.
Owner:XIDIAN UNIV
Rare earth single-ion magnet based on bis-salicylaldehyde nitrogen oxide pyridine-2, 6-diformyl hydrazone and preparation method of rare earth single-ion magnet
PendingCN114133407AHigh yieldGood repeatabilityGroup 3/13 organic compounds without C-metal linkagesOrganic chemistry methodsDimerSalicylaldehyde
The invention discloses a rare earth monomolecular magnet based on bis-salicylaldehyde nitrogen oxide pyridine-2, 6-diformyl hydrazone and a preparation method of the rare earth monomolecular magnet based on bis-salicylaldehyde nitrogen oxide pyridine-2, 6-diformyl hydrazone. The magnet is synthesized in a vacuum solvent tube through a low-temperature solvothermal method by taking bis-salicylaldehyde nitrogen oxide pyridine-2, 6-diformyl hydrazone (H4sapho) ligand, dysprosium nitrate and triethylamine as raw materials. The crystal is in a P21 / n space group of a monoclinic system, and the molecular formula of the crystal is [Dy (H3sapo) (NO3) 2 (CH3OH) 2]. CH3OH, the compound is of a mononuclear structure formed by chelating an acylhydrazone group on one wing of a single H3sapo-ligand and two nitrate ions with a DyIII ion together. And two adjacent molecules are connected through an intermolecular hydrogen bond to form a dimer. Thermogravimetric and powder diffraction tests respectively show that the magnet has good stability and phase purity. The alternating-current magnetic susceptibility of the magnet shows a frequency-dependent single-ion magnet behavior in a zero field. After the quantum tunneling effect is suppressed by an external magnetic field, the frequency dependence behavior is more obvious, and the effective energy barrier and relaxation time are 29.10 cm <-1 > (40.74 K) and 3.6 * 10 <-5 > s respectively.
Owner:GUILIN UNIVERSITY OF TECHNOLOGY
Grid-control metal-insulator device based on electronic tunneling
InactiveCN102222697BControl tunneling efficiencyReduce leakage currentSemiconductor/solid-state device manufacturingSemiconductor devicesMOSFETSub threshold
The invention belongs to the technical field of quantum effect devices, and in particular relates to a grid-control metal-insulator device based on electronic tunneling. The grid-control metal-insulator device based on the electronic tunneling comprises a semiconductor substrate, a grid, a grid insulator layer, and a source, a drain, a source doping area, a tunneling insulator layer and a metal layer which are positioned on the semiconductor substrate, wherein the metal layer, the tunneling insulator layer and the semiconductor substrate form a metal-insulator-semiconductor (MIS) structure; the grid is positioned on one side of the MIS structure on the semiconductor substrate; and the grid insulator layer is positioned between the MIS structure and the grid. A metallic oxide semiconductorfield effect transistor (MOSFET)-like (MOS-like) device based on a quantum tunneling effect is manufactured by a platform process; and by applying proper biasing pressure on the MOS-like device, the tunneling effect of the MOS-like device can be controlled, reverse current is reduced and sub-threshold amplitude performance is improved.
Owner:FUDAN UNIV
Waterproof device and its electroconductive method with leakage current less than 10[mu]A
InactiveCN108976876AReduce thicknessConduction reachesAntifouling/underwater paintsPrinted circuit detailsQuantum tunnellingMaterials science
The invention relates to a waterproof device and its electroconductive method. The waterproof device comprises a body and a coating layer that cover a part or all of surface of the body. The coating layer comprises a recoverable deformation non-electroconductive material or a touch-sensitive quantum tunnelling material. The thickness of the coating layer is more than 30 nm. Furthermore, a contacting electroconductive method is used for the waterproof device.
![Waterproof device and its electroconductive method with leakage current less than 10[mu]A](https://images-eureka.patsnap.com/patent_img/80abf8aa-46f2-4253-9d3b-f5fdb7d41d1d/HDA0001684312110000011.png "Waterproof device and its electroconductive method with leakage current less than 10[mu]A")
![Waterproof device and its electroconductive method with leakage current less than 10[mu]A](https://images-eureka.patsnap.com/patent_img/80abf8aa-46f2-4253-9d3b-f5fdb7d41d1d/HDA0001684312110000021.png "Waterproof device and its electroconductive method with leakage current less than 10[mu]A")
![Waterproof device and its electroconductive method with leakage current less than 10[mu]A](https://images-eureka.patsnap.com/patent_img/80abf8aa-46f2-4253-9d3b-f5fdb7d41d1d/HDA0001684312110000031.png "Waterproof device and its electroconductive method with leakage current less than 10[mu]A")
Owner:DAZZEON TECH CO LTD
Quantum-effect device based on MIS (Metal-Insulator-Semiconductor) structure
InactiveCN102231391BReduce power consumptionControl tunneling efficiencySemiconductor/solid-state device manufacturingSemiconductor devicesGratingSemiconductor structure
The invention belongs to the technical field of quantum-effect devices, in particular relates to a quantum-effect device based on an MIS (Metal-Insulator-Semiconductor) structure. The quantum-effect device comprises a semiconductor substrate, a source electrode, a drain electrode, a tunneling insulator layer and a metal layer, wherein the source electrode, the drain electrode, the tunneling insulator layer and the metal layer are arranged on the semiconductor substrate; and the metal layer, the tunneling insulator layer and the semiconductor layer form an MIS structure. The quantum-effect device further comprises a grid electrode and a grating type insulator layer, wherein the grid electrode is arranged at one side of the MIS structure, and the grating type insulator layer is arranged between the MIS structure and the grid electrode. According to the quantum-effect device based on the MIS structure, a quantum tunneling effect and a gated diode are integrated together, and a gated metal insulator semiconductor diode based on the quantum tunneling effect is manufactured by using a platform process. A suitable bias voltage is applied to the quantum-effect device so that the tunnelingefficiency of the quantum-effect device can be controlled, a drain current can be reduced to be much smaller than the drain current of a normal diode, and the power dissipation of a chip is reduced.
Owner:FUDAN UNIV
Fence-type grid-controlled metal-insulator device based on electronic tunneling
InactiveCN102222686AImprove controlControl tunneling efficiencySemiconductor/solid-state device manufacturingSemiconductor devicesSub thresholdMetal insulator
The invention belongs to the technical field of quantum effect device, and particularly relates to a fence-type grid-controlled metal-insulator device based on electronic tunneling. The device comprises a semiconductor substrate, and a source electrode, a drain electrode, a source doping region, a tunneling insulator layer and a metal layer positioned on the semiconductor substrate; an MIS (Management Information System) structure consists of the metal layer, the tunneling insulator layer and the semiconductor substrate; and the device further comprises a grid insulator layer and a grid electrode positioned on the grid insulator layer for surrounding the MIS structure in a circle. In the invention, the fence-type grid-controlled metal-insulator device based on electronic tunneling effect is manufactured with platform technology, and the grid electrode surrounds the metal-insulator structure in a circle for enhancing the control ability of the grid electrode; and simultaneously, proper bias voltage is applied on the fence-type grid-controlled metal-insulator device so as to control the tunneling efficiency, decrease the leakage current and improve the sub-threshold swing amplitude performance.
Owner:FUDAN UNIV
Graphene strip heterojunction double-gate tfet and its switching characteristic improvement method
ActiveCN109037321BReduced subthreshold swingImprove switching characteristicsTransistorSemiconductor/solid-state device manufacturingHeterojunctionGraphite
Owner:HANGZHOU DIANZI UNIV
Add-on type liquid silicon rubber/organic montmorillonite nanometer composite material and its preparation method
InactiveCN1295279CImprove mechanical propertiesImprove thermal stabilityChemical reactionBoundary effects
The invention discloses a liquid silicon rubber / organic montmorillonite nano composite material and its preparing process by employing in-situ aggregation intercalation technology, after the montmorillonite's intercalation, it can be dispersed into polymeric matrix by the form of nano sheets, which will show a small dimensional effect, boundary effect and quantum tunnelling effect. The contact plane and activity can be increased substantially.
Owner:SHANGHAI UNIV OF ENG SCI
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