34 results about "Quantum tunnelling" patented technology

The invention discloses a light-emitting diode epitaxial wafer with high luminous efficiency and a preparation method thereof, belonging to the field of light-emitting diodes. The high-luminous-efficiency light-emitting diode epitaxial wafer includes: a substrate, and a u-type GaN layer, an N-type GaN layer, a multi-quantum well active layer, a P-type AlGaN layer, and a P-type GaN carrier layer covering the substrate in sequence , the multi-quantum well active layer includes a plurality of InGaN well layers and a plurality of GaN barrier layers grown alternately; the P-type AlGaN layer includes the first P-type AlGaN sublayer, u-type GaN sublayer and the second P-type AlGaN sublayer. It can not only reduce the potential energy required for holes in the P-type GaN carrier layer to cross the P-type AlGaN layer, but also form a quantum state in the u-type GaN sublayer. The potential energy in the P-type GaN carrier layer is lower than that of crossing the P-type The holes with the potential energy required by the AlGaN layer will tunnel into the u-type GaN sub-layer through the quantum tunneling effect, and then be transported into the quantum wells, increasing the hole concentration injected into the multi-quantum well active layer.

The invention relates to a preparation method of a P-type dye-sensitized battery, belonging to the fields of material preparation and solar cells. That is to use a femtosecond laser to form a fine and dense micro-nano structure on a nickel sheet, and then oxidize at a high temperature in the air to form a dense NiO layer on the nickel sheet; combined with an ultra-thin dense aluminum oxide (Al2O3) passivation layer to prepare a p-type Dye-sensitized battery; due to the micro-nano structure on the surface of the nickel sheet, the specific surface area is large, resulting in an increase in the amount of dye adsorption. In addition, because the NiO layer is directly oxidized on the nickel sheet, the two are in close contact, and the NiO layer will not When a fracture occurs, the carrier transport characteristics to the electrode are also good. And when the ultra-thin (less than 1nm) Al2O3 passivation layer reduces the charge recombination on the NiO surface, since there are only a few atomic layers, the quantum tunneling effect is obvious, so that it has little effect on electrical transmission.

The invention discloses a graphene strip heterojunction double-gate TFET and a method for improving switching characteristics thereof. How to improve the on-state current of TFET is an important direction of TFET research. The source region, the drain region and the channel between the source region and the drain region of the present invention form a graphene strip heterojunction; the channel is composed of a first channel section and a second channel section arranged along the direction from the source region to the drain region ; The source region, the second section of the channel and the drain area are all armchair graphene nano-strips; the extending direction of the strips of the first channel and the extending direction of the armchair graphene nano-strips form an included angle. In the off state of the present invention, a section of the channel is a bandgap armchair graphene nano-strip along the length direction of the device, and the regional density of states is 0, which plays a role in suppressing the off-state current; in the on state, there is Current, one section of the channel is a zigzag graphene strip along the direction of current transmission, and there is no band gap in one section of the channel, which promotes the quantum tunneling effect of electrons between the source region and the channel, and increases the on-state current.