34 results about "Quantum tunnelling" patented technology

The invention provides a true random number sequence generation method based on the quantum tunneling effect. A quantum puncturing source is used to generate an original random sequence; after the probability of the tunneling of the quantum tunneling source is stabilized, the original random sequence generated after the tunneling probability is stable is denoised by the Toeplitz-hashing method toobtain the final true random number sequence. The elements of the random number sequence generated by the invention are independent of each other, which means that the random number sequence has goodrandomness; at the same time, the system for implementing the method is simple and low in cost.

An image capturing device including a zoom control unit with a variable zoom speed feature. The image capturing device includes a case having a manipulation hole, a holder provided inside the case, a knob, a plurality of quantum tunnelling composites (QTCs) housed in the holder, and a PCB. The knob is rotatably supported by the holder while having a portion exposed through the manipulation hole. Resistance of the QTC changes according to pressure applied from the knob. A plurality of current detectors is mounted on the PCB to detect current flowing through the QTCs. Voltage is applied across positive and negative electrodes formed on each QTC. No current flows through the QTC when no pressure is applied, and its resistance gradually decreases and current flowing therethrough gradually increases as pressure is applied. Each current detector detects the current and changes zoom speed in multiple steps according to the detected current.

The invention discloses a high-luminous efficiency light emitting diode epitaxial slice and a preparation method thereof and belongs to the light-emitting diode field. The high-luminous efficiency light emitting diode epitaxial slice includes a substrate as well as a u type GaN layer, an n-type GaN layer, a multiple-quantum well active layer, a P-type AlGaN layer and a P-type GaN carrier layer which cover the substrate sequentially, wherein the multiple-quantum well active layer includes a plurality of InGaN well layers and a plurality of Gan barrier layers which grow alternately, and the P-type AlGaN layer includes a first P-type AlGaN sub layer, a u type GaN sub layer and a second P-type AlGaN sub layer which cover the multiple-quantum well active layer sequentially. According to the high-luminous efficiency light emitting diode epitaxial slice, potential energy required by holes in the P-type GaN carrier layer to climb over the P-type AlGaN layer can be decreased; quantum states can be formed in the u type GaN sub layer; holes in the P-type GaN carrier layer, of which the potential energy is lower than the potential energy for climbing over the P-type AlGaN layer, can tunnel the u type GaN sub layer through the quantum tunneling effect, and can be further transmitted into quantum wells, and therefore, hole concentration in the multiple-quantum well active layer can be improved.

The invention discloses a graphene strip heterojunction double-gate TFET and a switch characteristic lifting method thereof. How to increase the on-state current of TFET is an important research direction of TFET. The source region, the drain region and the channel between the source region and the drain region constitute a graphene band heterojunction; The channel consists of the first section and the second section along the direction from the source area to the drain area. The source region, the second channel region and the drain region are all armchair graphene nanoribbons. The stretchingdirection of the first segment of the channel is at an angle to the stretching direction of the armchair graphene nano band. At the close state, the first section of the channel is a band gap armchair graphene nano band along the length direction of the device, and the density of regional states is 0, so that the close state current is restrained; and at the close state, the first section of thechannel is a band gap armchair graphene nano band along the length direction of the device, and the density of regional states is 0; In the open state, there is a current in the channel, the first section of the channel is a sawtooth graphene band along the current transmission direction, and there is no band gap in the first section of the channel, which promotes the quantum tunneling effect between the source region and the channel, and enhances the open state current.

The invention relates to a miniature electron-position collision system and a method for magnetizing an electromagnetic product by using the same. The miniature electron-position collision system includes two piezoelectric devices, and a metal carrier, a wire and an electromagnetic product fixed on an electronic display. According to the miniature electron-position collision system and the method for magnetizing the electromagnetic product by using the same, the quantum tunneling effect and the piezoelectric principle are used as base, electron-position collision of the metal carrier is performed by pressing the two piezoelectric devices, so that magnetization of the electromagnetic device is reinforced, and the related electromagnetic performances of the electromagnetic device is promoted, wherein the storage capacity of the accumulator can be improved for about 30%, and the purpose of longing field work time is achieved.

The embodiment of the invention provides an electrolysis electrode and a preparation method thereof, an electrolysis device and clothes treatment equipment. The electrolysis electrode comprises a basebody, a transition layer and an electrode catalytic material layer, the transition layer is attached to the surface of the base body, the electrode catalytic material layer is attached to the surfaceof the transition layer, and the thickness of the transition layer meets the requirement that electrons can penetrate through the transition layer. According to the electrolysis electrode, the transition layer is relatively thin so that the electrons can penetrate through the transition layer due to a quantum tunneling effect, and the electro-catalytic performance of the electrolytic electrode isnot influenced basically; furthermore, the transition layer plays a role in transition connection, the phenomenon that in the prior art, the electrode catalytic material layer cracks due to the difference of expansion coefficients between the base body and the electrode catalytic material layer can be greatly improved, and the service life of the electrolysis electrode is prolonged.

The invention provides a back structure of a thermo-photovoltaic cell. The back structure comprises a cadmium telluride layer. The back structure is characterized in that a groove is arranged in the back surface of the cadmium telluride layer. A silica dioxide film layer of 5-10nm is arranged in the groove. An aluminum layer is printed on the surface of the silica dioxide film layer. The silica dioxide film layer and the aluminum layer form Mie-scattering to the light reaching the bottom surface and have high backscattering effect so that the photoelectric conversion efficiency of the thermo-photovoltaic cell can be enhanced. The silica dioxide and the aluminum dielectric form the "quantum tunneling effect" so that collection of the carriers can be facilitated and the photoelectric conversion efficiency can be greatly enhanced.

The invention belongs to the technical field of quantum-effect devices, in particular relates to a quantum-effect device based on an MIS (Metal-Insulator-Semiconductor) structure. The quantum-effect device comprises a semiconductor substrate, a source electrode, a drain electrode, a tunneling insulator layer and a metal layer, wherein the source electrode, the drain electrode, the tunneling insulator layer and the metal layer are arranged on the semiconductor substrate; and the metal layer, the tunneling insulator layer and the semiconductor layer form an MIS structure. The quantum-effect device further comprises a grid electrode and a grating type insulator layer, wherein the grid electrode is arranged at one side of the MIS structure, and the grating type insulator layer is arranged between the MIS structure and the grid electrode. According to the quantum-effect device based on the MIS structure, a quantum tunneling effect and a gated diode are integrated together, and a gated metal insulator semiconductor diode based on the quantum tunneling effect is manufactured by using a platform process. A suitable bias voltage is applied to the quantum-effect device so that the tunnelingefficiency of the quantum-effect device can be controlled, a drain current can be reduced to be much smaller than the drain current of a normal diode, and the power dissipation of a chip is reduced.

The invention relates to a miniature electronic collision system and a method for improving electronic equipment by the miniature electronic collision system. The miniature electronic collision system comprises two piezoelectric devices, a metal carrier, a wire and an electronic product, wherein the metal carrier, the wire and the electronic product are fixed on an electronic display. On the basis of the quantum tunnelling effect and the piezoelectric principle, electronic collision is carried out on the metal carrier by pressing the double piezoelectric devices, so that the improvement effect on the electronic product is strengthened; the problems of slow response and the like of the electronic equipment are solved; related electronic equipment is relatively sensitive; the storage capacity of old low-capacity batteries in small manufacturers or other brands can be improved by about 30%; the target of prolonging the field work time is achieved; and the problems of environmental pollution and clean energy are solved.

The invention belongs to the technical field of quantum effect devices, particularly relates to an electron tunneling based enclosure type grid control metal-insulator device. The device comprises a semiconductor substrate, a source electrode, a drain electrode, a tunneling insulator layer, a metal layer, a gate insulator layer and a grid, wherein the source electrode, the drain electrode, the tunneling insulator layer and the metal layer are arranged on the semiconductor substrate; the metal layer, tunneling insulator layer and the semiconductor substrate form an MIS (metal-insulator-semiconductor) structure; the grid is arranged on the gate insulator layer and encloses the MIS structure. According to the invention, the electron tunneling based enclosure type grid control metal-insulatordevice is manufactured by adopting a platform process; the enclosure type grid is used to control the device, thus enhancing the control capacity of the grid; meanwhile, through applying proper bias voltage to the electron tunneling based enclosure type grid control metal-insulator device, the tunneling efficiency can be controlled, leakage current can be reduced to a degree far lower than that of a common diode, thus the power consumption of a chip can be reduced.

The invention relates to a selenium antimony sulfide thin film solar cell with a 3D structure and a preparation method thereof, and belongs to the technical field of cell preparation. The thin film solar cell comprises substrate glass, a TiO2 layer, a BaTiO3 thin film layer, a Sb2 (S, Se) 3 thin film layer, a hole transport layer and an electrode layer which are sequentially stacked from bottom to top. The invention further discloses a preparation method of the Sb2 (S, Se) 3 thin film solar cell, the TiO2 layer of the prepared Sb2 (S, Se) 3 thin film solar cell is of a 3D-TiO2 array structure, pn junctions are formed by the TiO2 layer and the Sb2 (S, Se) 3 thin film layer, the BaTiO3 thin film serves as a passivation layer to be inserted between the pn junctions, and recombination of heterojunctions at an interface is reduced. The BaTiO3 thin film layer and the TiO2 layer form a double-buffer-layer structure, the width of a depletion layer is increased, and the open-circuit voltage of the cell can be effectively improved. And the ferroelectricity of BaTiO3 is utilized, so that the separation capacity of current carriers and the open-circuit voltage of the battery are improved. And the thickness of the BaTiO3 film is relatively small, so that the problem of high internal resistance of the battery caused by poor conductivity of BaTiO3 is solved based on the quantum tunneling effect.

The invention provides a high-modulation-speed light emitting diode, a modulation method thereof and a manufacturing method thereof. The PN junction region of the light emitting diode comprise a double-quantum-well structure. The double-quantum-well structure comprises a first quantum well and a second quantum well. The band gap of the first quantum well is larger than that of the second quantum well. The first quantum well radiates signal light, and the second quantum well radiates auxiliary light. Through a quantum tunneling effect, the first quantum well is coupled with the second quantum well. Through a dynamic process of carries in an energy space, the high-modulation-speed light emitting diode performs functions of realizing ultra-quick injection and ultra-quick extraction of the carriers from an energy area which is radiated by the signal light, reducing time required in rising edge and falling edge of the optical signal of the light emitting diode, and furthermore improving modulation speed of the light emitting diode.

The invention discloses a rare earth monomolecular magnet based on bis-salicylaldehyde nitrogen oxide pyridine-2, 6-diformyl hydrazone and a preparation method of the rare earth monomolecular magnet based on bis-salicylaldehyde nitrogen oxide pyridine-2, 6-diformyl hydrazone. The magnet is synthesized in a vacuum solvent tube through a low-temperature solvothermal method by taking bis-salicylaldehyde nitrogen oxide pyridine-2, 6-diformyl hydrazone (H4sapho) ligand, dysprosium nitrate and triethylamine as raw materials. The crystal is in a P21/n space group of a monoclinic system, and the molecular formula of the crystal is [Dy (H3sapo) (NO3) 2 (CH3OH) 2]. CH3OH, the compound is of a mononuclear structure formed by chelating an acylhydrazone group on one wing of a single H3sapo-ligand and two nitrate ions with a DyIII ion together. And two adjacent molecules are connected through an intermolecular hydrogen bond to form a dimer. Thermogravimetric and powder diffraction tests respectively show that the magnet has good stability and phase purity. The alternating-current magnetic susceptibility of the magnet shows a frequency-dependent single-ion magnet behavior in a zero field. After the quantum tunneling effect is suppressed by an external magnetic field, the frequency dependence behavior is more obvious, and the effective energy barrier and relaxation time are 29.10 cm <-1 > (40.74 K) and 3.6 * 10 <-5 > s respectively.

The invention belongs to the technical field of quantum effect device, and particularly relates to a fence-type grid-controlled metal-insulator device based on electronic tunneling. The device comprises a semiconductor substrate, and a source electrode, a drain electrode, a source doping region, a tunneling insulator layer and a metal layer positioned on the semiconductor substrate; an MIS (Management Information System) structure consists of the metal layer, the tunneling insulator layer and the semiconductor substrate; and the device further comprises a grid insulator layer and a grid electrode positioned on the grid insulator layer for surrounding the MIS structure in a circle. In the invention, the fence-type grid-controlled metal-insulator device based on electronic tunneling effect is manufactured with platform technology, and the grid electrode surrounds the metal-insulator structure in a circle for enhancing the control ability of the grid electrode; and simultaneously, proper bias voltage is applied on the fence-type grid-controlled metal-insulator device so as to control the tunneling efficiency, decrease the leakage current and improve the sub-threshold swing amplitude performance.