2 results about "Quantum tunnelling" patented technology

This invention discloses a terahertz detector based on the field-enhanced quantum tunneling effect of a nano-gap, applicable to the fields of terahertz detection and micro / nanoelectronic devices. It addresses the problem of insufficient detection sensitivity caused by the extremely low coupling efficiency of traditional tunneling devices with free-space terahertz waves due to their extremely small size. The detector of this invention includes a dielectric substrate, a metal receiving antenna, a nano-gap enhancement region, and a signal monitoring circuit; its structure is a planar horizontal structure. This invention utilizes the metal receiving antenna to collect incident terahertz waves, thereby generating a high-intensity local electric field in the nano-gap enhancement region. This local electric field drives electrons in the metal to undergo nonlinear quantum tunneling or field emission within the nano-gap, achieving rectification and detection of the terahertz signal. Compared to traditional detectors, this invention requires no external light source pumping and possesses advantages such as room-temperature operation, large response bandwidth, high sensitivity, and ease of integration.

This invention relates to the field of steering wheel hands-off sensing and detection technology, and to a method for preparing an integrated leather steering wheel hands-off sensing device. The invention includes: sequentially constructing a base coating resin layer, a sensor layer, and a top-coating resin layer on a leather substrate, followed by cutting and coating to obtain the integrated leather steering wheel hands-off sensing device; the sensor layer includes an electrode layer and a sensor sensitive layer, wherein the sensor sensitive layer is a composite material layer containing nano-conductive particles, achieving piezoresistive sensing through quantum tunneling effect, and completing the steering wheel hands-off detection by detecting the exponential change in resistance of the sensor sensitive layer under external force.