Electron tunneling based enclosure type grid control metal-insulator device

Abstract

The invention belongs to the technical field of quantum effect devices, particularly relates to an electron tunneling based enclosure type grid control metal-insulator device. The device comprises a semiconductor substrate, a source electrode, a drain electrode, a tunneling insulator layer, a metal layer, a gate insulator layer and a grid, wherein the source electrode, the drain electrode, the tunneling insulator layer and the metal layer are arranged on the semiconductor substrate; the metal layer, tunneling insulator layer and the semiconductor substrate form an MIS (metal-insulator-semiconductor) structure; the grid is arranged on the gate insulator layer and encloses the MIS structure. According to the invention, the electron tunneling based enclosure type grid control metal-insulatordevice is manufactured by adopting a platform process; the enclosure type grid is used to control the device, thus enhancing the control capacity of the grid; meanwhile, through applying proper bias voltage to the electron tunneling based enclosure type grid control metal-insulator device, the tunneling efficiency can be controlled, leakage current can be reduced to a degree far lower than that of a common diode, thus the power consumption of a chip can be reduced.

Description

technical field [0001] The invention belongs to the technical field of quantum effect devices, and in particular relates to a gate-enclosed gate-controlled metal-insulator device based on electron tunneling. Background technique [0002] In recent years, microelectronics technology with silicon integrated circuits as the core has developed rapidly. As one of the important indicators to measure the development of integrated circuits, the degree of integration basically follows Moore's law, that is, the degree of integration of semiconductor chips doubles every 18 months, which requires continuous reduction in the size of devices. In the process of shrinking the characteristic size of semiconductor devices, when the characteristic size of the chip is in the micron scale, the electrons in it are mainly particle in the wave-particle duality. At present, most semiconductor devices only use the particle of electrons; when the chip's When the characteristic size is at the nanomete...

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Problems solved by technology

Those whose energy is higher than the potential barrier and whose motion direction is suitable may not necessarily react, it can only be said that the probability of reaction is relatively high

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