62results about How to "Reduce reverse current" patented technology

A magnetic memory is provided with a memory cell. The memory cell includes a magnetic recording element, an interconnection to generate a radio-frequency current-induced magnetic field and a ground line. The magnetic recording element is provided with a first magnetic layer whose magnetization direction is substantially fixed, a magnetic recording layer whose magnetization direction is substantially reversed by spin-polarized electrons passing through the magnetic recording layer and a first nonmagnetic layer provided between the first magnetic layer and the magnetic recording layer. The interconnection is provided above the magnetic recording element to generate a radio-frequency current-induced magnetic field acting in a direction substantially perpendicular to a magnetization easy axis of the magnetic recording layer. The ground line is provided on a side opposite to the magnetic recording element with respect to the interconnection.

A magnetic memory element having a layer structure containing a fixing layer (pinned layer: PL) having a magnetization direction fixed unidirectionally, a nonmagnetic dielectric layer (TN1) in contact with the fixing layer (PL), and a memory layer (free layer: FL) having a first surface in contact with the nonmagnetic dielectric layer (TN1) and a second surface on the opposite to the first surface, the magnetization direction of the memory layer (FL) having a reversible magnetization direction in response to the current through the layer structure. The entire surface of the first surface of the memory layer (FL) is covered with the nonmagnetic dielectric layer (TN1) and in the joint surface of the nonmagnetic dielectric layer (TN1) and the fixing layer (PL), the first surface of the nonmagnetic dielectric layer (TN1) is exposed in a manner of surrounding the joint surface.

The invention relates to a polysilicon alkaline wool making method, which comprises the following steps that: 1) preparing alkaline wool making solution; 2) heating the well-prepared wool making solution, and soaking one piece of polysilicon into the wool making solution to make wool; 3) rinsing the wool-made polysilicon piece; 4) cleaning the rinsed polysilicon piece with acid, and performing the secondary rinsing; and 5) drying the polysilicon piece after the secondary rinsing to complete the polysilicon alkaline wool making procedures.

The present invention provides a control circuit to avoid a reverse current of a synchronous rectifier. A switching signal is applied to charge an inductor of a power converter. A predication circuit generates a timing signal in response to the switching signal. The timing signal is used to turn off the synchronous rectifier for preventing the reverse current occurred in light load and no load conditions.

In a semiconductor system 20 made up of multiple sublayers, a sublayer over the largest part of a cross-sectional area BC in the interior of the semiconductor system borders immediately on the first sublayer, while bordering on a second sublayer only in a comparatively narrow edge region of the cross-sectional area. The semiconductor system is characterized by a low bulk resistance and a high breakdown voltage in the edge region. In addition, a method for manufacturing this semiconductor system is specified.

Embodiments of the invention disclose a super junction power device of a split gate structure. The device comprises a source, a drain, a first gate, a second gate, a third gate, a body diode and a body contact diode, wherein the cathode of the body diode is connected to the drain, the anode of the body contact diode is connected to the anode of the body diode, the cathode of the body contact diodeis connected to the source, the first gate controls a first current channel between the source and the drain to be turned on or off through the gate voltage, the second gate and a third gate are connected to the source, the second gate controls a second current channel between the source and the drain to be turned on or off through the source voltage, the third gate is a shield gate, and the source voltage is used to increase the withstand voltage of the super junction power device of the split gate structure.

The embodiment of the invention provides a grooved super junction power device. The device comprises sources, a drain, first gates, second gates, body diodes, and p-body contact diodes, wherein each body diode is connected in series with the corresponding p-body contact diode; each first gate controls the on/off of a corresponding first current channel, which is controlled by the first gate, through a gate voltage; and each second gate is connected with the corresponding source, and controls the on/off of a corresponding second current channel, which is controlled by the second gate, through asource voltage. The grooved super junction power device provided by the invention has the advantages that when the device is off, reverse currents flowing through the body diodes can be greatly reduced, so that the number of minority carriers in the body diodes can be greatly decreased, and the grooved super junction power device can achieve a rapid reverse recovery function.

The invention provides an antenna and a mobile terminal. The antenna comprises a first sub-antenna and a second sub-antenna, and radiators of the first sub-antenna and the second sub-antenna share a first branch, and the radiators of the first sub-antenna and the second sub-antenna further comprise a second branch. At setting, the second branch is electrically connected with the first branch, thesecond branch and the first branch are intersected at a set angle, and the ratio of the length of the second branch to the wavelength of a specific working frequency is within a set threshold value, wherein the specific working frequency is within the working frequency band of the second sub-antenna. The second branch is arranged to be electrically connected with the first branch and intersect with the first branch at the set angle, at the same time, the length of the second branch is limited, so that the resonance formed by the second branch is compatible with a half mode of the first branch,the frequency band width of the antenna is broadened. Moreover, a reverse current between the first branch and the second branch can be reduced, an efficiency pit is shallow, and further the performance of the antenna is improved, and the communication effect of the antenna is improved.

The invention provides a high-voltage output converter which uses a positive flyback circuit and comprises an input positive end, an input negative end, a transformer TX1, an MOS transistor Q1, an MOStransistor Q2, a diode D1, a diode D2, a diode D3, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, an output positive end and an output negative end. According to the connection relation, the input positive end, the dotted terminal of the primary winding of the transformer TX1, the drain electrode of the MOS transistor Q1 and the input negative end are connected in sequence; the capacitor C2 and the MOS transistor Q2 are connected in series and then are connected in parallel to two ends of the primary winding; the synonym end of the secondary winding of the transformer TX1, the diodes D1 and D3 and the output positive end are connected in series; the output negative end, the diode D2 and the dotted terminal of the secondary winding of the transformer TX1 are sequentially connected in series; the capacitor C1 is connected in parallel between the cathode of the diode D1 and the dotted terminal of the secondary winding of the transformer TX1, the capacitor C2 is connectedin parallel between the synonym terminal of the secondary winding of the transformer TX1 and the anode of the diode D2, and the capacitor C3 is connected in parallel between the output positive terminal and the output negative terminal. High-voltage output can be realized, and main power is ensured to realize ZVS in a full-load range.

The invention discloses a self-biased differential drive rectifier circuit with a wide dynamic range. The differential drive rectifier circuit is composed of a differential drive rectifier composed ofa first NMOS transistor (M1), a second NMOS transistor (M2), a first PMOS transistor (M3) and a second PMOS transistor (M4), and a diode of a special structure composed of a first diode (D1) and a second diode (D2). Input signals are RF+ and RF- and are connected with the input end of the differential drive rectifier through the first capacitor (C1) and the second capacitor (C2), the output end of the differential drive rectifier is connected with the first diode (D1) and the second diode (D2) which are connected in parallel, and the output ends of the first diode (D1) and the second diode (D2) are output signals Vout. Feedback is introduced from an output port through a diode, so that bias is provided for a grid electrode of an output PMOS of the differential drive rectifier, and the grid voltage of the differential drive rectifier is controlled. Under the condition of high input power, the reverse current of the differential drive rectifier is effectively reduced, and the dynamic range of high-efficiency output of the differential drive rectifier circuit is widened.

The invention relates to a method and an actuation assembly (3) for actuating a MOSFET (1), in particular a MOSFET (1) based on a semiconductor with a wide band gap. According to the invention, a monitoring process is carried out to determine whether the body diode (2) of the MOSFET (1) is electrically conductive. If the body diode (2) is electrically conductive, the MOSFET (1) is activated, and if the body diode (2) is electrically blocking, the MOSFET is actuated on the basis of an actuation signal (S1).