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A trench type igbt power device

A power device, trench technology, used in semiconductor devices, electrical components, circuits, etc., can solve the problem of long reverse recovery time, reduce reverse recovery time, reduce reverse recovery charge, and fast reverse recovery. effect of function

Active Publication Date: 2020-10-16
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the purpose of the present invention is to provide a trench type IGBT power device with fast reverse recovery function, so as to solve the relatively short reverse recovery time of IGBT power devices in the prior art due to the problem of minority carrier injection. long technical question

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  • A trench type igbt power device
  • A trench type igbt power device
  • A trench type igbt power device

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Embodiment Construction

[0031] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be fully described below in a specific manner in conjunction with the drawings in the embodiments of the present invention. Apparently, the described embodiments are some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative work, All fall within the protection scope of the present invention.

[0032] It should be understood that terms such as "having", "comprising" and "including" used herein do not denote the presence or addition of one or more other elements or combinations thereof. At the same time, in order to clearly illustrate the specific implementation of the present invention, the schematic diagrams listed in the accompanying drawings of the description magnify t...

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Abstract

The embodiment of the invention provides a channel-type IGBT power device. The channel-type IGBT power device comprises emitters, a collector, first grids, second grids, bulk diodes and bulk region contact diodes, wherein each bulk diode and the corresponding bulk region contact diode are connected in series, each first grid controls opening and closing of a first current channel between the corresponding emitter and the collector through grid voltage, and each second grid is connected with the corresponding emitter and controls opening and closing of a second current channel between the corresponding emitter and the collector through emitter voltage. When the channel-type IGBT power device is switched off, a reverse current flowing through each bulk diode can be substantially lowered, therefore, minor carriers in the bulk diodes can be substantially reduced, and the channel-type IGBT power device can achieve a rapid reverse recovery function.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, in particular to a trench type IGBT power device with fast reverse recovery function. Background technique [0002] The IGBT (Insulated Gate Field Effect Transistor) power device is a device composed of a MOS transistor and a bipolar transistor. Its input is a MOS transistor and its output is a PNP transistor. It combines the advantages of these two devices and has both MOS transistors have the advantages of low driving power and fast switching speed, and have the advantages of low saturation voltage drop and large capacity of bipolar transistors. They have been more and more widely used in modern power electronics technology, especially those that occupy higher frequencies. The dominant position of large and medium power tube applications. [0003] The schematic diagram of the cross-sectional structure of the trench type IGBT power device in the prior art is as follows figu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/10H01L29/739
Inventor 龚轶刘伟刘磊王睿
Owner SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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