Bootstrap structure and bootstrap circuit integrated on high and low voltage isolation structure

A high and low voltage isolation, bootstrap circuit technology, applied in the direction of circuits, electrical components, electric solid state devices, etc., can solve the problems of increasing additional costs, insufficient high-side power supply, increasing system size, etc., to reduce the amount of charge, solve The effect of partial breakdown

Active Publication Date: 2020-03-31
SOUTHEAST UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, (1) the use of external bootstrap diodes increases the additional cost of system applications, and also increases the difficulty of system layout and wiring and the size of the system
(2) The external bootstrap diode is a high-voltage diode, and its reverse recovery charge Qrr is large. During the reverse recovery process, the charge on the bootstrap capacitor will be taken away, making the high-side power supply insufficient

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bootstrap structure and bootstrap circuit integrated on high and low voltage isolation structure
  • Bootstrap structure and bootstrap circuit integrated on high and low voltage isolation structure
  • Bootstrap structure and bootstrap circuit integrated on high and low voltage isolation structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] A bootstrap structure integrated on a high and low voltage isolation structure, including a first doped type substrate 01 that doubles as a high and low voltage isolation structure substrate, and a second doped type drift region 06 that doubles as a high and low voltage isolation structure drift region And the first doped type substrate contact well 08 which doubles as the high and low voltage isolation structure substrate contact well 08 is provided with the first doped type contact region as the substrate contact electrode in the first doped type substrate contact well 08 14. A bootstrap structure positive electrode and a bootstrap structure negative electrode are respectively provided on the drift region 06 of the second doping type, and the positive electrode of the bootstrap structure is a second electrode set in the drift region 06 of the second doping type The doping type contact region 11, the bootstrap structure negative electrode is another second doping type c...

Embodiment 2

[0027] A bootstrap circuit based on the bootstrap structure, including a bootstrap structure and a bootstrap capacitor 20, the bootstrap structure includes a first doping type substrate 01 that doubles as a high and low voltage isolation structure substrate, and a high The drift region 06 of the second doping type in the drift region of the low-voltage isolation structure and the substrate contact well 08 of the first doping type double as the substrate contact well of the high-voltage isolation structure are characterized in that the substrate contact well 08 of the first doping type The well 08 is provided with a first doping type contact region 14 as a substrate contact electrode, and a bootstrap structure positive electrode and a bootstrap structure negative electrode are respectively provided on the second doping type drift region 06, and the bootstrap structure The positive electrode is a second doping type contact region 11 arranged in the drift region 06 of the second d...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a bootstrap structure integrated to a high-and-low-voltage isolation structure and a bootstrap circuit. The bootstrap structure is composed of a first doped type substrate serving as a substrate for a high-and-low-voltage isolation structure, a second doped type drift region serving as a drift region, and a first doped type substrate contact well serving as a substrate contact well. A first doped type substrate contact region as a substrate contact electrode is arranged in the first doped type contact well. A bootstrap structure positive electrode and a bootstrap structure negative electrode are respectively provided in the second doped type drift region; the bootstrap structure positive electrode is one second doped type contact region arranged in the second dopedtype drift region; the bootstrap structure negative electrode is the other second doped type contact region arranged in the second doped type drift region; and the bootstrap structure positive electrode is adjacent to the first doped type contact region. In addition, the bootstrap circuit consists of a bootstrap structure and a bootstrap capacitor; a diode is connected to the bootstrap structurepositive electrode; and the bootstrap capacitor is connected with the bootstrap structure negative electrode.

Description

technical field [0001] The invention relates to a high-voltage half-bridge drive circuit in a high-voltage power integrated circuit, in particular to a bootstrap structure and bootstrap circuit technology integrated on a high-voltage and low-voltage isolation structure, and belongs to the field of power semiconductor drive technology. Background technique [0002] The high-voltage half-bridge drive circuit can be used in various fields, such as motor drive, electronic ballast, switching power supply and other fields. It is used to drive two power switching devices connected in the form of totem poles to make them alternately conduct Pass. The typical connection method of the half-bridge driver chip without integrated bootstrap diode is as follows: figure 2 As shown, among them, VCC is the low-side fixed power supply, HIN and LIN are the high-side input signal and low-side input signal respectively, COM is the ground signal, VB is the high-side floating power supply, HO and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
CPCH01L27/0207
Inventor 孙伟锋王浩张龙祝靖陆生礼时龙兴
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products