IGBT power device

A technology of power devices and MOS transistors, applied in the field of semiconductor power devices, can solve the problem of long reverse recovery time, and achieve the effects of reducing reverse recovery time, reducing reverse recovery charge, and reducing reverse current

Active Publication Date: 2019-05-14
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, the purpose of the present invention is to provide a kind of IGBT power device with fast reverse recovery function, to solve the technical problem that the reverse recovery time of the IGBT power device of the prior art is longer due to the minority carrier injection problem

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Embodiment Construction

[0041]In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be fully described below through specific implementation in combination with the drawings in the embodiments of the present invention. Apparently, the described embodiments are some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts, All fall within the protection scope of the present invention.

[0042] It should be understood that terms such as "having", "comprising" and "including" used herein do not denote the presence or addition of one or more other elements or combinations thereof. At the same time, in order to clearly illustrate the specific implementation of the present invention, the schematic diagrams listed in the accompanying drawings of the d...

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Abstract

An IGBT power device provided by an embodiment of the invention comprises a bipolar transistor, a first MOS transistor, a second MOS transistor, a body diode, and a body contact diode, wherein the anode of the body contact diode is connected to the anode of the body diode, and the cathode of the body contact diode is connected to the emitter of the bipolar transistor; the first gate of the first MOS transistor controls the first MOS transistor to be turned on or off through the gate voltage of the IGBT power device, the second gate of the second MOS transistor is connected to the emitter of the bipolar transistor, and the second gate of the second MOS transistor controls the second MOS transistor to be turned on or off through the emitter voltage of the IGBT power device.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, in particular to an IGBT power device with fast reverse recovery function. Background technique [0002] The IGBT (Insulated Gate Field Effect Transistor) power device is a device composed of a MOS transistor and a bipolar transistor. Its input is a MOS transistor and its output is a PNP transistor. It combines the advantages of these two devices and has both MOS transistors have the advantages of low driving power and fast switching speed, and have the advantages of low saturation voltage drop and large capacity of bipolar transistors. They have been more and more widely used in modern power electronics technology, especially those that occupy higher frequencies. The dominant position of large and medium power tube applications. [0003] The schematic diagram of the cross-sectional structure of the IGBT power device of the prior art is as figure 1 As shown, it includes the ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L21/331H01L29/06
Inventor 刘伟龚轶刘磊袁愿林
Owner SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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